40395 Search Results

40395

Contextual Info: 40395 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)18ã V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)12u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.

ED83127-30

Abstract: BDFB ED83127 power distribution frame ED83127 fuse panel lineage 2000 BDFB FUSES KS21320 J85568D-1 blown fuse indicator with alarm h569-429
Contextual Info: Product Manual J85568D-1 Select Code 157-005-101 Comcode 106991391 Issue 5 March 1998 Lucent Technologies Lineage 2000 Eight-Load BDFB Battery Distribution Fuse Bay and Six-Load PDF (Power Distribution Frame) Notice: Every effort was made to ensure that the information in this

Contextual Info: Bulletin No. PAX2A-C Drawing No. LP0830 Released 04/13 Tel +1 717 767-6511 Fax +1 (717) 764-0839 www.redlion.net MODEL PAX2A – 1/8 DIN ANALOG PANEL METER  UNIVERSAL PROCESS, VOLTAGE, CURRENT, RESISTANCE AND TEMPERATURE INPUTS  UNIVERSAL AC/DC POWER SUPPLY

Contextual Info: TransformingMagneticsTM SwitchmodePower Features ET20H Common Mode Chokes • • • • Various inductance and current ratings Reduced leakage Broad attenuation bandwidth Low DCR for better efficiency Applications • Designed for DC/DC converters • Can be used for common mode rejection in any DC/

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

235J

Abstract: 40395
Contextual Info: 4 2 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED RELEASED FOR PUBLICATION BY AMP INCORPORATED. ALL INTERNATIONAL COPYRIGHT 19 LOC DIST AF 50 RIGHTS RESERVED. REVISIONS ZONE LTR J DESCRIPTION DATE REV PER 0 7 1 0 -0 4 2 7 - 9 5 APPD

Contextual Info: CY7C1339G 4-Mbit 128 K x 32 Pipelined Sync SRAM 4-Mbit (128 K × 32) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1339G SRAM integrates 128 K × 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

Contextual Info: CY7C1339G 4-Mbit 128 K x 32 Pipelined Sync SRAM 4-Mbit (128 K × 32) Pipelined Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation The CY7C1339G SRAM integrates 128 K × 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter

Contextual Info: TransformingMagneticsTM SwitchmodePower Parts Number Index Products Inductors DHC-5121 Series . 3 DHC-7328 Series . 4 DHC-7342 Series . 5

40397

Abstract: 40404 40402
Contextual Info: ET20H Common Mode Chokes SwitchmodePower Features • • • • Various inductance and current ratings Reduced leakage Broad attenuation bandwidth Low DCR for better efficiency Applications • Designed for DC/DC converters • Can be used for common mode rejection in

Contextual Info: CY7C1338G 4-Mbit 128 K x 32 Flow-Through Sync SRAM 4-Mbit (128 K × 32) Flow-Through Sync SRAM Features 8.0 ns (100-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated

Contextual Info: CY14C256I CY14B256I CY14E256I 256-Kbit 32 K x 8 Serial (I2C) nvSRAM with Real Time Clock 256-Kbit (32 K × 8) Serial (I2C) nvSRAM with Real Time Clock Features • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 32 K × 8

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

decode counter 7490

Abstract: internal diagram of 7490 decade counter ic 7490 Decade Counter procedure DIGITAL IC 7490 internal structure of 7490 IC of 7490 IC decade counter HP3437A crt tv fault finding ls 7490 86c7
Contextual Info: \ictC 1^1 5Û Û4A SIGNATURE A N A L Y Z E R UNSTABLE SIGNATURE fTAHT SIO P O.OCK 5*C P CLOCK *S P A C K A R D ^ evvle* y jj Application Note 222 A DESIGNER’S GUIDE TO SIGNATURE ANALYSIS TABLE OF CONTENTS Page I. In tro d u c tio n to Signature Analysis .

Contextual Info: TransformingMagneticsTM SwitchmodePower ET20H Common Mode Chokes Features • • • • Various inductance and current ratings Reduced leakage Broad attenuation bandwidth Low DCR for better efficiency Applications • Designed for DC/DC converters • Can be used for common mode rejection in any DC/

Contextual Info: General Cable Global Reach Cable Installation Manual for Power and Control Cables Ninth Edition 4 Tesseneer Drive, Highland Heights, Kentucky 41076-9753 Phone: 888 593-3355 info@generalcable.com 590 Barmac Drive, North York Ontario, Canada M9L 2X8 Phone: +1.800.561.0649

R96FAX

Contextual Info: MODEM PRODUCTS DATA BOOK <1 Rockwell International Semiconductor Products Division Rockwell International Corporation 1987 All Rights Reserved Printed in U.S.A. Order No. 1 February, 1987 Rockwell Sem iconductor Products Division is headquartered in Newport Beach, California with Field

3TE445

Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group

Contextual Info: CY7C1328G 4-Mbit 256 K x 18 Pipelined DCD Sync SRAM 4-Mbit (256 K × 18) Pipelined DCD Sync SRAM Features Functional Description • Registered inputs and outputs for pipelined operation ■ Optimal for performance (double-cycle deselect) ❐ Depth expansion without wait state

Contextual Info: CY7C1046D 4-Mbit 1 M x 4 Static RAM 4-Mbit (1 M × 4) Static RAM Features provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable

Contextual Info: CY14C256PA CY14B256PA CY14E256PA 256-Kbit 32 K x 8 SPI nvSRAM with Real Time Clock 256-Kbit (32 K × 8) SPI nvSRAM with Real Time Clock Features ❐ ❐ • 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 32 K × 8

Contextual Info: CY7C1338G 4-Mbit 128 K x 32 Flow-Through Sync SRAM 4-Mbit (128 K × 32) Flow-Through Sync SRAM Features 8.0 ns (100-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated

Contextual Info: CY7C1338G 4-Mbit 128 K x 32 Flow-Through Sync SRAM 4-Mbit (128 K × 32) Flow-Through Sync SRAM Features 8.0 ns (100-MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated