400X8 Search Results

Contextual Info: Profile 8789 400x85 mm Weight (Kg/mt) Width (mm) Height (mm) RTH (C/W)* *Lenght (mm) 35,77 400 58 0,12 400 PADA ENGINEERING S.r.l. Via G. B. Pirelli, 11 - Saltara (PU) 61030 - Italy Tel. +39 0721 899555 - Fax. +39 0721 897064 - www.padaengineering.com

Contextual Info: Profile 8264 400x83 mm Weight (Kg/mt) Width (mm) Height (mm) RTH (C/W)* *Lenght (mm) 40,8 400 83 0,11 400 PADA ENGINEERING S.r.l. Via G. B. Pirelli, 11 - Saltara (PU) 61030 - Italy Tel. +39 0721 899555 - Fax. +39 0721 897064 - www.padaengineering.com

12U25

Abstract: 400X cornell
Contextual Info: CO R N E L L D U BI LI ER Radiai, Ì5 X' i v » lib ­ i l e , Compn^T (.nickv Type 400X Twice the Life! Designed for com puters and other long life power supply filter applications. Type 400 delivers nearly the capacitance o f the Type 4CM , but with 2 to 3

K4C560838C-TCB

Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

ks0066u

Abstract: KS0066U lcd COM16 KS0063B KS0065B SEG40 40seg
Contextual Info: KS0066U 16COM / 40SEG DRIVER & CONTROLLER FOR DOT MATRIX LCD INTRODUCTION 80 QFP-1420C KS0066U is a dot matrix LCD driver & controller LSI whichis fabricated by low power CMOS technology. It can display 1or 2 lines with the 5x8 dots format or 1 line with the 5×11 dots format.

Contextual Info: K4C5608/1638M 256Mb FCRAM FCRAM Specification Version 0.0 - 1 - REV. 0.0 Oct. 2001 K4C5608/1638M 256Mb FCRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Notice : FCRAM is a Trademark of Fujitsu Limited, Japen - 2 - REV. 0.0 Oct. 2001 K4C5608/1638M

350AB

Abstract: BF930 2291C 400R392U100AC8 400X1 400R821U450BE8
Contextual Info: RADIAL LEADED CAPACITORS Long Life High Ripple Computer Grade, 95°C Type 400-Standard/Type 400X-Max Cap/Type 400R-Max Ripple Designed for minicomputers and other long life power supply filte r applications, type 400 delivers nearly the capacitance o f the type 4CM b u t with 2 to 3 times the

Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Three-State Outputs Access Times —55/70 (Commercial or Industrial) Advanced CMOS Technology Single 5 Volts ±10% Power Supply

Contextual Info: T O S H IB A TC59LM814/06CFT-50,-55,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM DESCRIPTION TC59LM814/06CFT are a CMOS Double Data Rate Fast Cycle Random Access Memory DDR

L-23014-01

Abstract: L24002 mitsubishi cdram
Contextual Info: L-21001-0B MITSUBISHI ELECTRIC Mitsubishi DRAM Technical Direction High Performance, Low Power,High Density,High Speed etc. High Density Wide Bit Organization 1G High Speed 512M Direct Rambus TM x32 256M DDR 128M SDRAM EDO Fast Page 64M DRAM Self Refresh

L24002

Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities

W5453

Abstract: mitsubishi year code L2202 mitsubishi clk 8MX16
Contextual Info: MITSUBISHI ELECTRIC - L-æoa-o1 v 128M SDRAM Type Designation Code M2 V 28 S 4 0 TP-8 Access Item Package Type TP:TSOP ll Process Generation _ : 1st. gen. Function 0 : Random Column Organization 2n 2: x4, 3: x8, 4: x16

P4C1024L-70P/LF

Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 50µA/50µA Three-State Outputs Access Times —55/70 (Commercial or Industrial) Advanced CMOS Technology Single 5 Volts ±10% Power Supply

lm815

Contextual Info: TOSHIBA TENTATIVE TC59LM815/07/03BFT-22,-24,-30 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX 16-BITS DOUBLE DATA RATE FAST CYCLE RAM 8,388,608-WORDSX4BANKSX8-BITS DOUBLE DATA RATE FAST CYCLE RAM 16,777,216-WORDSX4BANKSX4-BITS DOUBLE DATA RATE FAST CYCLE RAM

CS0066

Contextual Info: CS0066 Wuxi I-CORE Electronics Co., Ltd. 16COM / 40SEG DRIVER & CONTROLLER FOR DOT MATRIX LCD DESCRIPTION CS0066 is a dot matrix LCD driver & controller LSI whichis fabricated by low power CMOS technology. It can display 1or 2 lines with the 5x8 dots format or 1 line with the 5×11 dots format.

ks0066u

Abstract: KS0066 lcd 2 x 8 KS0066U lcd COM16 KS0063B KS0065B SEG40 4 digit dot matrix display
Contextual Info: KS0066U 16COM / 40SEG DRIVER & CONTROLLER FOR DOT MATRIX LCD INTRODUCTION 80 QFP-1420C KS0066U is a dot matrix LCD driver & controller LSI whichis fabricated by low power CMOS technology. It can display 1or 2 lines with the 5x8 dots format or 1 line with the 5×11 dots format.

K4C560838C-TCD3

Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
Contextual Info: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.4 - 1 - REV. 0.4 May. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

K4C560838C-TCD3

Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
Contextual Info: K4C5608/1638C 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.7 - 1 - REV. 0.7 Aug. 2003 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM

TC59WM715

Abstract: TC59WM71
Contextual Info: TOSHIBA T C 5 9 W M 7 15/07/03FT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON MONOLITHIC 2,097,152-W O RD SX4BAN KSX 16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM

TC59WM715

Contextual Info: TOSHIBA TC59WM715/07/03FT-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-W O R D SX4B A N K SX16-BITS SYNCHRONOUS DYNAMIC RAM 4,194,304-W ORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-W ORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM

K4C560838F-TCD3

Abstract: K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA
Contextual Info: K4C5608/1638F 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.3 - 1 - REV. 0.3 Jan. 2005 K4C5608/1638F 256Mb Network-DRAM Revision History Version 0.0 Dec./ 2003 - First Release Version 0.1 (Aug./ 2004) - Deleted BL2 and self refresh Version 0.2 (Nov./ 2004)

P4C1024L

Abstract: P600
Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 50µA/50µA Three-State Outputs Access Times —55/70 (Commercial or Industrial) Advanced CMOS Technology Single 5 Volts ±10% Power Supply

sandisk micro sd card pin

Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM