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    400MICRON Search Results

    400MICRON Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM SST34HF162x / SST34HF164x SST31VF201 / 401 / 8012Mb/4Mb/8Mb Flash x16 + 1MbSRAM (x16) ComboMemories Preliminary Specifications FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent


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    sst34hf162xsst34hf164xsst31vf2018012mb/4mb/8mb+6sst34hf16x112mbitsst34hf16x248ba-lfbga-l3k-6x8-450mic-illmo-21048-ball PDF

    Contextual Info: TGF2040 400um Discrete GaAs pHEMT Applications •     Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features         Functional Block Diagram Frequency Range: DC - 20 GHz


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    tgf2040400um400-micron PDF

    Contextual Info: epitex Opto-Device & Custom LED L850-40T52 Φ5 STEM TYPE LED LAMP L850-40T52 stem type LED L850-40T52 is AlGaAs LED mounted on TO-18 stem and hermetically sealed with flat glass can. On forward bias it emits a spectral band of radiation, which peaks at 850nm.


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    l850-40t52850nm400micronj-6512 PDF

    ATF-58143

    Abstract: GRH708 GRM40 LL2012-F ATF10236
    Contextual Info: A Low Noise High Intercept Point Amplifier for 2 GHz Applications using the ATF-58143 PHEMT Application Note 1352 Introduction The Agilent Technologies’ ATF-58143 is a low noise enhancement mode PHEMT designed for use in low cost -commercial applications in the


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    atf-581435988-9119engrh708grm40+2ll2012-fatf10236 PDF

    Contextual Info: 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM SST34HF162x / SST34HF164x SST31VF201 / 401 / 8012Mb/4Mb/8Mb Flash x16 + 1MbSRAM (x16) ComboMemories Preliminary Specifications FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent


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    sst34hf162xsst34hf164xsst31vf2018012mb/4mb/8mb+6sst34hf16x112mbitsst34hf16x248ba-lfbga-l3k-6x8-450mic-illmo-21048-ball PDF

    ATF-58143

    Abstract: GRH708 ATF58143 LL2012-F
    Contextual Info: A Low Noise High Intercept Point Amplifier for 2 GHz Applications using the ATF-58143 PHEMT Application Note 1352 Introduction The Avago Technologies’ ATF-58143 is a low noise enhancement mode PHEMT designed for use in low cost -commercial applications in the UHF through


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    atf-58143atf-102365988-9119engrh708+2atf58143ll2012-f PDF

    Contextual Info: epitex Opto-Device & Custom LED L940-40D52 Φ5 STEM TYPE LED LAMP L940-40D52 Stem type LED L940-40D52 is GaAs LED mounted on TO-18 stem and hermetically sealed with flat glass lens. On forward bias it emits a spectral band of radiation, which peaks at 940nm.


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    l940-40d52940nm400micronj-6512 PDF

    Contextual Info: epitex Opto-Device & Custom LED L870-40T52 Φ5 STEM TYPE LED LAMP L870-40T52 stem type LED L870-40T52 is AlGaAs LED mounted on TO-18 stem and hermetically sealed with flat glass can. On forward bias it emits a spectral band of radiation, which peaks at 870nm.


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    l870-40t52870nm400micronj-6512 PDF

    agilent pHEMT transistor

    Abstract: Curtice transistor ajw agilent pHEMT transistor LNA LOW NOISE AMPLIFIER ATF-54143 AN-1222 ATF55143 ATF-55143 ATF-551M4 advanced design system
    Contextual Info: Agilent ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used


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    atf-551435988-9555enagilent phemt transistorcurtice+7transistor ajwagilent phemt transistor lna low noise amplifieratf-54143an-1222atf55143atf-551m4advanced design system PDF

    Contextual Info: 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 SST34HF1621/ 164116 Mb CSF x16 + 2/4 Mb SRAM (x16) ComboMemories Data Sheet FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent Read/Write Operation


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    sst34hf1621sst34hf1641sst34hf1621/56-ball+1s71172-05-000 PDF

    L-07C1N8ST

    Abstract: atf55143 fet curtice nonlinear model ATF-55143 sdars AN-1222 ATF-551M4 ATF pHEMT 250R07C8R2FV4T
    Contextual Info: ATF-55143 Low Noise 2300 MHz Amplifier Application Note 5294 Introduction Description A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high linearity. Besides having a very low typical noise figure


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    atf-55143av01-0376enl-07c1n8statf55143+6fet curtice nonlinear modelsdarsan-1222atf-551m4atf phemt250r07c8r2fv4t PDF

    Contextual Info: TGF2040 400um Discrete GaAs pHEMT Applications • • • • • Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features • • • • • • • • Functional Block Diagram Frequency Range: DC - 20 GHz


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    tgf2040400um400-micron PDF

    Contextual Info: epitex Opto-Device & Custom LED L940-40T52 Φ5 STEM TYPE LED LAMP L940-40T52 stem type LED L940-40T52 is AlGaAs LED mounted on TO-18 stem and hermetically sealed with flat glass can. On forward bias it emits a spectral band of radiation, which peaks at 940nm.


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    l940-40t52940nm400micronj-6512 PDF

    L940-40D42

    Contextual Info: epitex Opto-Device & Custom LED Φ5 STEM TYPE LED LAMP L940-40D42 PRELIMINARY L940-40D42 Stem type LED L940-40D42 is GaAs LED mounted on TO-18 stem and hermetically sealed with unspherical glass lens. On forward bias it emits a spectral band of radiation, which peaks at 940nm.


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    l940-40d42940nm400micronj-6512 PDF

    SST34HF1621

    Abstract: SST34HF1641
    Contextual Info: 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 SST34HF1621/ 164116 Mb CSF x16 + 2/4 Mb SRAM (x16) ComboMemories Data Sheet FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent Read/Write Operation


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    sst34hf1621sst34hf1641sst34hf1621/56-ball+1s71172-05-000 PDF

    ATF54143

    Abstract: ATF-10236 ATF-54143 ATF-55143 ATF10236 ATF-641 Using the ATF-10236 in Low noise
    Contextual Info: A Low Noise High Intercept Point Amplifier for 900 MHz Applications using ATF-54143 PHEMT Application Note 1299 1. Introduction The Avago Technologies ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the VHF through


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    atf-54143atf-102365988-6670enatf54143+4atf-55143atf10236atf-641using the atf-10236 in low noise PDF

    transistor ajw

    Abstract: ATF55143 Curtice AN-1222 ATF-54143 ATF-55143 ATF-551M4 ATF-5X143 55143
    Contextual Info: ATF-55143 E-pHEMT GaAs FET Low Noise Amplifier Design for 1.575 GHz GPS Applications Application Note 1376 Introduction A critical first step in any LNA design is the selection of the active device. Low cost field effect transistors are often used due to their low noise figures and high


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    atf-55143an-1281atf-541435988-9555en+7transistor ajwatf55143curticean-1222atf-551m4atf-5x14355143 PDF

    SST34HF1621

    Abstract: SST34HF1641
    Contextual Info: 16 Mbit Concurrent SuperFlash + 2 / 4 Mbit SRAM ComboMemory SST34HF1621 / SST34HF1641 SST3 4HF16 21/ 164 116 Mb CSF x1 6 + 2Mb / 4Mb SRAM (x8/x16 ) MCP Co mboMe morie s Data Sheet FEATURES: • Block-Erase Capability – Uniform 32 KWord blocks • Read Access Time


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    sst34hf1621sst34hf16414hf16x8/x16+256-lfbga-l1p-8x10-450mic-3mo-210 PDF

    Contextual Info: TGF2040 400um Discrete GaAs pHEMT Applications • • • • • Defense & Aerospace High-Reliability Test and Measurement Commercial Broadband Wireless Product Features • • • • • • • • Functional Block Diagram Frequency Range: DC - 20 GHz


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    tgf2040400um400-micron PDF