400AT Search Results

1757000133G

Abstract: RPS-400ATX-ZE PS-400ATX-ZBE 1757000007G 1757000193G 1757000162G 1757001761 1757000105G 1757000131G RPS-300ATX-ZE
Contextual Info: Power Supplies Redundant Power Supplies Model Name RPS-300ATX-ZE RPS-400ATX-ZE MTBF hrs 300 W 100 ~ 240 VAC 60 ~ 50 Hz 6~3A +5 V @ 25 A (3 A min) +3.3 V @ 18 A (1 A min) +12 V @ 16 A (2 A min) -12 V @ 0.5 A -5 V @ 0.5 A +5 Vsb @ 2 A 100,000 400 W 100 ~ 240 VAC

5045-04A molex

Abstract: L03S100D15 L03S300D15 200AT L03S200D15 L03S400D15 5045-04A 300AT
Contextual Info: NEW CURRENT SENSORS L03S TYPE ● コネクタタイプで100AT~400ATまで標準化 ● Connector ● バスバー取り付け可能 ● Bus-bar can type, standardized from 100AT up to 400AT. be attached. ● Volume-less ● Low cost ● ボリュームレス

L01ZXXXS05

Abstract: L01Z***S05 L01Z200S05
Contextual Info: Issued by Module Components Div, TAMURA CORPORATION Hall Effect Current Sensors L01Z*S05 Series Features: •     Advantage: Open Loop type Printed circuit board mounting Unipolar power supply Aperture for cable or bus bar Insulated plastic case according to

L01Z300S05

Abstract: L01Z050S05 L01Z200S05 200at L01Z400S05 L01Z L01Z100S05 L01Z150S05 L01Z500S05 L01Z600S05
Contextual Info: NEW CURRENT SENSORS L01Z TYPE ● 供給電源＋5V ● Power ● オンボードタイプ ● On-board supply : ＋5V type ● Compact, light weight, standardized from 50AT up to 600AT ● 小型軽量で50AT~600ATまで標準化 •仕様 SPECIFICATIONS

Contextual Info: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating

SMD MARKING CODE AQ1

Abstract: MARKING CODE SMD JW C17S 16T MARKING P-SOJ-32-1 TSOP-32 Q67100-Q1536
Contextual Info: SIEM ENS 16M X 4-Bit Dynamic RAM 4k & 8k-Refresh HYB 3164400AJ/AT(L) -40/-50/-60 HY b 3165400AJ/AT(L) -40/-50/-60 Prelim inary Inform ation • 16 777 216 words by 4-bit organization • 0 to 70 "C operating tem perature • Fast Page M ode operation •

mm-100-xxx

Abstract: microprocessor 80286 internal architecture mm-100-xx AMD "model 8" AMD Family 10h Processor Electrical Data Sheet mmx 166 id-20 innovation 80286 address decoder Ac-37-k amd 15h power
Contextual Info: Preliminary Information AMD-K6 -IIIE+ Embedded Processor Data Sheet Publication # 23543 Rev: A Amendment/0 Issue Date: September 2000 2000 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro

200AT

Abstract: L01Z400S05 s05 hall L01Z100S05 l01z L01Z050S05 L01Z150S05 L01Z200S05 L01Z300S05 L01Z500S05
Contextual Info: Hall Effect Current Sensors L01Z*S05 Series Features: Advantage: Open Loop type Printed circuit board mounting Unipolar power supply Aperture for cable or bus bar Insulated plastic case according to UL94V0 • • • • • Excellent accuracy Very good linearity

P-SOJ-32-1

Abstract: TSOP-32 WL16
Contextual Info: 16M x 4-Bit Dynamic RAM HYB 3164405AJ/AT L -40/-50/-60 HYB 3165405AJ/AT(L) -40/-50/-60 (4k & 8k Refresh, EDO-Version) Advanced Information • • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature

HFA1C-300

Abstract: HFP2-20 HFP2 HFP2-05 HFA1C-50 HFP2-03 HFA1C HFA1-50 HFA1C-150 L03S
Contextual Info: CURRENT SENSORS 電流センサ A SERIES L / K SERIES HFP2 SERIES P7 / P7M SERIES P6 SERIES L03S TYPE NEW L08P TYPE NEW L10P TYPE NEW L16P TYPE NEW L01Z TYPE NEW HFA1 / HFA1C SERIES MCS SERIES 1 CURRENT SENSORS 電流センサ •用途 USAGE UPS インバータ

Centrifugal fans

Abstract: forward curved backward curved dual inlet single inlet
Contextual Info: 37777-7-8811 • KO-08/07-12’ Printed in Germany ebm-papst ebm-papst ebm-papst Mulfingen GmbH & Co. KG St.Georgen GmbH & Co. KG Landshut GmbH Bachmühle 2 Hermann-Papst-Straße 1 Hofmark-Aich-Straße 25 D-74673 Mulfingen D-78112 St.Georgen D-84030 Landshut

Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70

L01Z200S05

Abstract: 200AT l01z L01Z400S05 L01Z500S05 L01Z050S05 L01Z100S05 L01Z150S05 L01Z300S05 L01Z600S05
Contextual Info: Hall Effect Current Sensors L01Z*S05 Series Features: Advantage: Open Loop type Printed circuit board mounting Unipolar power supply Aperture for cable or bus bar Insulated plastic case according to UL94V0 • • • • • Excellent accuracy Very good linearity

P-SOJ-32-1

Abstract: smd transistor 2F data TSOP-32
Contextual Info: 16M x 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400AJ/AT(L) -40/-50/-60 HYB 3165400AJ/AT(L) -40/-50/-60 Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation • Performance:

HA050

Abstract: 5251* molex HA400 MOLEX 5659 HA100 MOLEX 5251 HA500 HA300 Sensors current HA100 ha600
Contextual Info: 電流検出器 Sensors Current S3 / P3 / R3 series ● ●汎用小型タイプ ●コネクタタイプ（S3） ●オンボードタイプ（P3） ●リード線タイプ（R3） ● ● ● • 仕様 S p e c i f i c a t i o n s General use compact type.

MS12R

Contextual Info: 16M x 4-Bit Dynamic RAM . o, r, x . HY b 3164405AJ/AT L -40/-50/-60 HYB 3165405AJ/ATÌL) -40/-50/-60 v ' ^ (4k & 8k Refresh, EDO-Version) Advanced Information • 16 777 216 words by 4-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode - EDO - operation

l06p400s05

Abstract: L06P800S05 L06P300S05
Contextual Info: Hall Effect Current Sensors L06P*S05 Series Features: • • • • • • • Advantage: • • • • • • • • Open Loop type Printed circuit board mounting Horizontal mounting Unipolar power supply Industrial temperature range Mounting pins

smd marking YB

Abstract: Q67100-Q1557 405AJ 3164405AT-60 SMD MARKING CODE 09t P-SOJ-32-1 TSOP-32 ACS42
Contextual Info: SIEM ENS 16M 4-Bit Dynam ic RAM u X 4k & 8k-Refresh, EDO-version HYB 3164405AJ/AT(L) -40/-50/-60 «Y B 3165405AJ/AT(L) -40/-50/-60 X P r e lim in a r y In fo rm a tio n • • • • 16 777 216 words by 4-bit organization 0 to 70 ”C operating tem perature

36A65

Abstract: MH8M36
Contextual Info: MITSUBISHI LS Is DRAM MODULE FAST PAGE MODE DYNAMIC RAM 8M 288M BIT 36 M a x. A ccess Type nam e L o a d m e m o ry tim e O u tw a rd d im e n s io n s W x H X D (m m ) D a ta s h e e t page (n s ) MH8M36AUJ-65 ★ MH8M36ANUJ-65 * X 8 MH8M36AUJ-75 * M 5 M 4 4 1 00 B T P , R T

f type connector

Abstract: L03S600D15W 200AT L03S050 L03S300D15WM 150AT 300AT L03S400D15WM
Contextual Info: Hall Effect Current Sensors L03S*D15WM Series Features: • • • • • Advantage: Open Loop type Panel mounting Molex connector Improved mounting Insulated plastic case according to UL94V0 • • • • • • Excellent accuracy and linearity Low temperature drift

1000A current sensors

Abstract: L03S050 200AT L03S800
Contextual Info: Hall Effect Current Sensors L03S*D15WJ Series Features: • • • • • Advantage: Open Loop type Panel mounting JST connector Improved mounting Insulated plastic case according to UL94V0 • • • • • • Excellent accuracy and linearity Low temperature drift

SR840

Contextual Info: WILLAS FM120-M+ SR840 THRUTHRU 8.0A SCHOTTKY BARRIER RECTIFIERS -40V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V TO-220A PACKAGE FM1200-M+ SR8200 Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers

Contextual Info: SIEMENS 16M X 4-Bit Dynamic RAM HYb 3164405AJ/AT L -40/-50/-60 „ o, o « u • X (4k & 8k-Refresh, EDO-version) HYB 3165405AJ/AT(L) -40/-50/-60 ' ’ P re lim in ary Info rm ation • 16 111 216 words by 4-bit organization • 0 to 70 ”C operating temperature

P-SOJ-32-1

Abstract: TSOP-32
Contextual Info: 16M x 4-Bit Dynamic RAM HYB 3164405AJ/AT L -40/-50/-60 HYB 3165405AJ/AT(L) -40/-50/-60 (4k & 8k Refresh, EDO-version) Preliminary Information • • • • • • • • • • 16 777 216 words by 4-bit organization 0 to 70 °C operating temperature