400A MOSFET Search Results

Module

Abstract: FM400HB1D5C
Contextual Info: SEMICONDUCTOR FM400HB1D5C TECHNICAL DATA 150V / 400A 2 - PACK MOSFET MODULE Half - Bridge FEATURES ・Low RDS(on) ・High frequency operation ・dv/dt ruggedness ・Fast switching APPLICATION ・Motor control ・Battery management system OUTLINE DRAWING

Module

Abstract: 2-PACK FM400CD1D5C
Contextual Info: SEMICONDUCTOR FM400CD1D5C TECHNICAL DATA 150V / 400A 2-PACK MOSFET MODULE Common-Drain FEATURES ・Low RDS(on) ・High frequency operation ・dv/dt ruggedness ・Fast switching APPLICATION ・Battery Management System ・Electric Vehicle, Automotive etc.

2-PACK

Abstract: FMMT312
Contextual Info: SEMICONDUCTOR FMMT312 TECHNICAL DATA 150V/400A 2-PACK MOSFET MODULE Half - Bridge ・Low RDS(on) ・High frequency operation ・dv/dt ruggedness ・Fast switching APPLICATION ・Motor Control ・Electric Vehicle, Automotive etc. INTERNAL CIRCUIT OUTLINE

IRGDDN400M06

Abstract: c454 INTAPAK package mosfet 400a
Contextual Info: International ^Rectifier Provisional Data Sheet PD-9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 400A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses

IRGDDN400K06

Abstract: power diode 400A VQE 11 400A mosfet vqe 13
Contextual Info: Provisional Data Sheet PD-9.1196 bitemational ïôHRectifier IRGDDN400K06 IRGRDN400K06 Low conduction loss IGBT "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK VCE= 600V lc = 400A •Rugged Design •Sim ple gate-drive .Switching-Loss Rating includes all ‘tail" losses

mosfet ir 840

Abstract: irgddn400k06 OF IGBT 300A 500V 400A mosfet
Contextual Info: International g ! Rectifier Provisional Data Sheet PD-9.1196 IRGDDN400K06 IRGRDN400K06 Low conduction loss IGBT "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK VCE = 600V lc = 400A • Rugged Design .Simple gate-drive •Switching-Loss Rating includes all "tail" losses

Contextual Info: 70-W206NBA400SA-M786L flowBOOST 4w 600V/400A Features FlowSCREW 4w ● Symmetrical Booster ● Integrated DC-capacitor ● Low DC Inductance <5nH ● Transient Interface for optional regeneration of switching losses ● Temperature Sensor Target Applications

DCM flyback transfer function

Abstract: "Application Note" and FAN400A sot-26 pwm controller Green-Mode PWM Controller sot-26 AN-400A FAN400A PWM controller sot-26 totempole driver SOT26 PWM pwm drive optocoupler high side MOSFET Gate Drive
Contextual Info: www.fairchildsemi.com AN-400A Low-Power Green-Mode PWM Flyback Power Controller without Secondary Feedback Abstract This highly integrated PWM controller, FAN400A, offers several features to enhance the performance of a flyback converter for low-power applications. Using the controller

Contextual Info: 70-W624N3A320SH-M400F preliminary datasheet NPC Application flowNPC 4w 2400V/400A General conditions VGEon BUCK = 15 V VGEoff Rgon Rgoff = = = -15 V 1Ω 1Ω Vout= 288 VAC Figure 1. BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 1Ω 1Ω Figure 2. Buck MOSFET

IXGQ150N33TC

Abstract: IXGQ150N33TCD1 siemens igbt 75a IXGA150N33TC g150n IXGA150 IXGQ150
Contextual Info: IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 Trench Gate High Speed IGBT VCES = ICP = VCE sat ≤ 330V 400A 1.8V For PDP Applications 150N33TC 150N33TCD1 TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 330 V VGEM Transient ± 30

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT MMIX1G320N60B3 Electrically Isolated Tab VCES = 600V IC25 = 400A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: Preliminary Technical Information MMIX1G320N60B3 GenX3TM 600V IGBT Electrically Isolated Tab VCES = 600V IC25 = 400A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: BUK454-400A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)30 I(D) Max. (A)4.6 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

IRGDDN400M12

Abstract: BVOE 18 mosfet 400a 400A mosfet C-561
Contextual Info: Provisional Data Sheet PD-9.1204 In ternational ï « r ]R e c tifie r IRGDDN400M12 IRGRDN400M12 "SINGLE SWITCH“ IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VŒ = 1200V lc = 400A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail"

Contextual Info: GenX3TM 300V IGBTs VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGK400N30A3 IXGX400N30A3 Ultra-Low Vsat PT IGBTs for up to 10kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGN400N30A3

Abstract: Aluminium nitride
Contextual Info: IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching VCES = 300V IC25 = 400A VCE sat ≤ 1.15V E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGN400N60A3

Contextual Info: IXGN400N60A3 GenX3TM 600V IGBT VCES = 600V IC25 = 400A VCE sat ≤ 1.25V Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGK400N30A3

Abstract: IXGX400N30A3 PLUS247
Contextual Info: IXGK400N30A3 IXGX400N30A3 GenX3TM 300V IGBTs VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra-Low Vsat PT IGBTs for up to 10kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: VCES = 300V IC25 = 400A VCE sat ≤ 1.15V IXGN400N30A3 GenX3TM 300V IGBT Ultra-Low-Vsat PT IGBT for up to 10kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGX400N30A3

Abstract: IXGK400N30A3 PLUS247 ixgx400
Contextual Info: IXGK400N30A3 IXGX400N30A3 GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra-low Vsat PT IGBTs for up to 10kHz switching TO-264 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 300

MMIX1G320N60B3

Abstract: 320N60B3 siemens ic igbt 300V 400A
Contextual Info: Advance Technical Information MMIX1G320N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 400A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGN400N60A3

Contextual Info: GenX3TM 600V IGBT IXGN400N60A3 VCES = 600V IC25 = 400A VCE sat ≤ 1.25V Ultra Low Vsat PT IGBT for up to 5kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous

IXGN400N60A3

Abstract: 400N30A3 IXGN400N30A3
Contextual Info: IXGN400N30A3 GenX3TM 300V IGBT VCES = 300V IC25 = 400A VCE sat ≤ 1.15V Ultra Low Vsat PT IGBT for up to 10kHz switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: VCES = 600V IC25 = 400A VCE sat ≤ 1.25V IXGN400N60A3 GenX3TM 600V IGBT Ultra-Low-Vsat PT IGBT for up to 5kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ