40 GD 4N DIODE Search Results

4N60

Abstract: 4N60S ssp4n50 40 gd 4n mosfet 4n60
Contextual Info: SSP4N 55/4N 60 SSH4N55/4N 60 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower R d s <o n Improved inductive ruggedness Fast switching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

4N60

Abstract: SSH4N60 4N60P ssp4n50 SSH4N55 SSP4N55 SSP4N60 mosfet 4n60
Contextual Info: SAMSUN6 ELECTRONICS INC SSP4N55/4N6Ó SSH4N55/4N 60 b7E T> • 7*lbmH2 OOl^BHI OTO ■ SMGK N-CHANNEL POWER MOSFETS FEATURES • « • • • • • TO-220 Low er R ds ON Im proved in d u c tive ru g g ed n es s F a st sw itch ing tim e s R u g g ed polysilicon g a te cell stru ctu re

4n70

Abstract: SSP4N70
Contextual Info: N-CHANNEL POWER MOSFETS SSP4N70 SSH4N70 FEATURES • • • • • • • TO -220 Low er R d s io n Im proved in d u c tiv e rug g e d n e ss Fast s w itc h in g tim e s R ugged p o ly s ilic o n gate c e ll s tru c tu re Lower in p u t ca p a cita n ce

1RFS730

Abstract: irfs730a
Contextual Info: IRFS730A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gale Charge Extended Safe Operating Area Lower Leakage Current : 10 pA{M ax. @ V^. =400V - 400V

4N90

Contextual Info: S S W Æ 4N 90 AS Advanced Power MOSFET FEATURES B V dss = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 MA Max. @ VDS= 900V

ufnf230

Abstract: UFNF93H UFNF9 40 gd 4n diode UFN232
Contextual Info: POWER MOSFET TRANSISTORS HfflSI? 200 Volt, 0.4 Ohm N-Channel UFNF232 UFNF233 FEATURES • Fast S w itching • Low Drive Current DESCRIPTION The U nitrode power M O SFET d esign utilizes the m ost advanced technology available. T h is efficie n t design a ch ieves a very low R dsioih and a high tran scon d u ctan ce.

Contextual Info: TO SHIBA TPCS8201 TOSHIBA FIELD EFFECT TRANSISTOR T P SILICON N CHANNEL MOS TYPE U-MOSH r s j o m INDUSTRIAL APPLICATIONS Unit in mm LITHIUM ION BATTERY NOTE BOOK PC PORTABLE MACHINES AND TOOLS □ □II□II□ I IH Low Drain-Source ON Resistance : Rd S(ON) —23mO (Typ.)

Contextual Info: m 7*12*1237 rz 7 Ä 7f G04b243 ôbQ • SGTH _ SGS-TUOMSON RÆ Q M[iLËOT(s«S S T P 4 N 1 0 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP 4N 1 0 0 X I ■ . ■ . . ■ . 1000 V R d S( oii < 4 0 Id 2 A TYPICAL RDS(on) = 3.1 Cl

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP4N60E, PHB4N60E SYMBOL QUICK REFERENCE DATA d R epetitive A valanche Rated Fast sw itching S table off-state characteristics High therm al cycling perform ance

Contextual Info: 7 =3E T E 37 G D M b BI S TTb • S G T H SCS-THOMSON RÆ 0Mq [I[UOT 2)«S STP4N40 STP4N40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP4N40 STP4N40FI ■ . ■ ■ ■ V dss Ros(on) Id 400 V 400 V < 2.1 Ü < 2.1 Î2 4 A 3 A TYPICAL R d s (oi-i) = 1.65 Q

f630

Abstract: IRF630 HEXFET TRANSISTORS F633 IRFG31 IRF632 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
Contextual Info: HE D I 4 055452 ÜGQâMTS t, | Data Sheet No. PD-9.309G INTERNATI ONAL RECTIFIER T -39-11 INTERNATIONAL RECTIFIER I “ R HEXFET* TRANSISTORS IRF63Q IRFG31 IM IRFB32 - C h a n n e l IRF633 Features: 200 Volt, 0.4 Ohm HEXFET TQ-220AB Plastic Package The HEXFET technology is the key to International Rec­

Contextual Info: STN4NE03 N - CHANNEL 30V - 0.045ft - 4A - SOT-223 STripFET POWER MOSFET TYPE V dss R D S o n Id STN 4N E03 30 V < 0 .0 6 Q 4 A . TYPICAL R d s (oh) = 0.045 £1 m EXCEPTIO NALdv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED

IC-7220

Abstract: UPA1523H NEC 7220 NEC TRANSISTOR 8882 WF S.E.60
Contextual Info: ~ t — S 7 • S '— h <r7 C o m p o u n d F ie ld E f f e c t P o w e r T r a n s i s t o r ¿¿PAI 5 2 3 '! P ^ - V — ^ U ^ - - M O S F E T 7 W I i f f l A/PA1523ÌÌ, P -f i t i * ÎC i F E T T \ 5 V ftifê& IC eo 4 -y f - * > 4 ^ K, T O : mm r - c - t o

TP4N50

Abstract: TP4N45 POWER MOSFET 4n45 k 3436 ic k 3436 transistor
Contextual Info: t MOTOROLA SC 14E 0 I X ST RS/R F b 3 b ?E S4 OOfllTlfl 3 | T -Z T -f! MOTOROLA H SEM IC O N D U C T O R TECHNICAL DATA M TM 4N45 M TM 4N50 MTP4N45 MTP4N50 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancem ent-Mode Silicon Gate T M O S

2SK2412

Abstract: 3R-90 TC-8031 2sk2412k
Contextual Info: J_ I C • E * 1K N MOSïï^l^ejÏJ^MOS FET MOS Field Effect Transistor ^ 2 S K 2 4 1 2 -V ¿¡WU/\0|7 -MOSFET 'f y 3- X C? Æ I > I l f f l 2 S K 2 4 1 2 liN 5 :- ^ t O H É a / \ “ 7 - M 0 S F E T T ', X < y •^■•fe : m m 10.0 m + 0.3 4.5 ± 0.2

1496C

Abstract: IRF 470 94Q3
Contextual Info: 9403A First-In First-Out FIFO Buffer Memory General Description Features The 9403A is an expandable fall-through type high-speed First-In First-Out (FIFO) Buffer Memory optimized for high­ speed disk or tape controllers and communication buffer applications. It is organized as 16-words by 4-bits and may

IEC 947-7-1 terminal block 400v

Abstract: din 46235 1064760000 M12-M16 1011120000 95 WDU Neozed 1027700000 gw 4007 1020500000
Contextual Info: W-series 2 W-series sets standards! When it comes to functional perfection even in details, Weidmüller’s W-series defines the market standards for many years now! The W-series comprises producte for conductor cross-sections between 1.5 and 300 mm2 which can be used for all important electrical applications connecting,

TAG 600

Abstract: LINDNER fuses LR 103020 LEVEL 3 SIBA FUSE FF IEC 947-7-1 terminal block 400v gw 4007 95324 160990 G-FUSE 24v DC Weidmuller BLZ 5.08
Contextual Info: W-series 2 W-series W-series Weidmüller is the world wide market leader in terminal blocks. W-series constantly sets new standards. The systematics of W-series are on continuous bases improved: l same dimensions in a range from 2.5 – 35 mm2, features a.o. disconnect

Contextual Info: April 1989 Semiconductor & 9403A First-In First-Out FIFO Buffer Memory General Description Features The 9403A is an expandable fall-through type high-speed First-In First-Out (FIFO) Buffer Memory optimized for high­ speed disk or tape controllers and communication buffer

Rthv

Abstract: R1124NS16X R1124NS18X 24NS1
Contextual Info: • n w i t s i u u n Date:- 20 Jun, 2001 u e Data Sheet Is s u e :-1 Distributed Gate Thyristor Types R1124NS16X to R1124NS18x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V drm R e p e titive p e a k o ff-sta te vo lta g e , note 1 160 0-1 8 0 0

Contextual Info: LED HS36S1FR-J t t H » LED L ig h tin g Pow er Supply H S 3 6 S 1 F R -J S pecification 1. J l W W g Application LED R g^ ffl^ i£® ® H S 36S lF R -J {C jiffli-5o This specification is applied to constant current power supply (HS36S1FR-J) for LED lighting.

LC1-D50A

Abstract: LC1D40A schneider LC1-D09 LC1-DWK12 LC1D65A LC1-D09 LAD4TBDL LC1-D18 LC1-D09 installation manual LC1-D12
Contextual Info: Motor control 1 TeSys range provide you more simplicity, compactness, openness and flexibility . so many evolutions and new items to aid your productivity. 2 Accurate and reliable control of motors 3 4 5 6 7 Increase your productivity, adopt our solutions which help to simplify

1RF150

Abstract: AN-947 equivalent AN-947 10CGD capax Pelly 1c7 diode v1035a I435
Contextual Info: A P P L IC A T I O N N O T E 947 Understanding HEXFET Switching Performance B y S. Clemente, B.R. Pelly, A. Iild o rl Abstract A simple analytical technique for predicting the switching perform ance of the H E X F E T is presented. O osed-form solutions for the gate voltage, drain current, and

16 Relay Control Board 16 Channel 24V Relay Module

Abstract: amp PA66-gf 13 connector
Contextual Info: TABLE OF CONTENTS CONNECTOR TO TERMINAL BLOCK MODULES GENERAL PURPOSE/ INTERFACE RELAYS Compact and reliable connections between high density connectors and high quality screw-cage clamp terminal blocks; DIN Rail mountable Page . . . . . . . . . . . . . . . . . . . . . . .6-7