Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    40 AMP COLLECTOR CURRENT Search Results

    40 AMP COLLECTOR CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK111G
    Toshiba Electronic Devices & Storage Corporation Load Switch IC, 1.1 to 5.5 V, 3.0 A, Inrush current reducing / Reverse current blocking, WCSP6C Datasheet
    TCK301G
    Toshiba Electronic Devices & Storage Corporation Load Switch IC, 2.3 to 28 V, 3.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP9 Datasheet
    TCK304G
    Toshiba Electronic Devices & Storage Corporation Load Switch IC, 2.3 to 28 V, 3.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP9 Datasheet
    TCK305G
    Toshiba Electronic Devices & Storage Corporation Load Switch IC, 2.3 to 28 V, 3.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP9 Datasheet
    TCK321G
    Toshiba Electronic Devices & Storage Corporation Load Switch IC, 2.3 to 36 V, 2.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP16C Datasheet

    40 AMP COLLECTOR CURRENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ECG245

    Abstract: DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG229 darlington 40 A ECG238 ECG234 ECG191
    Contextual Info: Transistors cont d ECG Type ECG229 ECG232 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base. Volts Description and Application bv NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter


    OCR Scan
    ECG229 ECG232 ECG233 ECG234 ECG23S O-218) ECG257 O-127 ECG258 ECG257) ECG245 DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain darlington 40 A ECG238 ECG191 PDF

    2N6714

    Abstract: 2N6715 DSA0037489 DSA003748
    Contextual Info: 2N6714 2N6715 — NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES vcE~ * 40 volt * Gain of 50 at Ic= 1 Amp * PTOt=1 Watt ABSOLUTE MAXIMUM PARAMETER SYMBOL — Collector-Base Voltage Collector-Emitter Emitter-Base ~ RATINGS. ‘CBO


    Original
    2N6714 2N6715 le50mA, 2N6714 2N6715 DSA0037489 DSA003748 PDF

    17K100

    Abstract: lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K
    Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD16K, 17K SERIES 225 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage P M D 16K , 17K80 P M D 16K , 17K100 FEATURES • Electrical specifications guaranteed for operating junction temperature range of


    OCR Scan
    PMD16K, 17K100 lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K PDF

    ECG229

    Abstract: ECG247 DIODE T28 ECG234 ECG251 ECG191 ECG2541 transistor ecg246 ECG232 ECG233
    Contextual Info: Transistors cont'd Collector To Base. Volts b v Cbo Description and Application ECG Type ECG229 ECG232 (Maximum Ratings at T c = 25°C Unless Otherwise Noted) NPN-Si, VHF Ose, Mix, IF Am p 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter


    OCR Scan
    ECG229 ECG232 ECG233 ECG234 ECG23S T0-218) ECG257 O-127 ECG258 ECG257) ECG247 DIODE T28 ECG251 ECG191 ECG2541 transistor ecg246 PDF

    2n6726

    Abstract: 2n6727
    Contextual Info: 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * * 4 0 V o ltV CEO Gain of 50 at lc : 1 Amp * Ptot=1 Watt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6726 Collector-Base Voltage V C BO -40 Collector-Emitter Voltage


    OCR Scan
    2N6726 2N6727 2N6727 -100mA* -50mA, PDF

    ZTX360

    Contextual Info: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX360 ISSUE 2 – MARCH 94 FEATURES * 40 Volt VCEO * 1 Amp continuous current * Fast switching C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO


    Original
    ZTX360 500mA, 100MHz ZTX360 PDF

    2N6726

    Abstract: 2N6727
    Contextual Info: 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6726 -40 2N6727


    Original
    2N6726 2N6727 -100mA* -10mA, -100mA, -50mA, 2N6726 2N6727 PDF

    Contextual Info: • g lffjjA P I ELECTRONICS INC DG43STE DOOOOia ] 20 AMP j 90 VOLT i 100 WATT ^ 40 MHz Ü TO-3 sé ft ï p ' y éjji.Æ/ TO-3 _ • Linear hFE from SO mA to 20 amps Low saturation voltage at maximum collector current • High frequency ft = 40 MHz typical)


    OCR Scan
    pg1500 pg1501 pg1502 pg1603 pg1504 pg1505 pg1506 pg1514 pg1515 pg1516 PDF

    2N6284

    Abstract: 2N6283 2N6286 2N6287 16 amp npn darlington power transistors
    Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286,2N6287 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SY M B O L Collector Em itter Voltage 2N6283, 2N6286 2N6284, 2N6287 Vdc 80 100 Vdc V cB O 80 100 Em itter Base Voltage


    OCR Scan
    2N6283, 2N6284, 2N6286, 2N6287 2N6286 2N6284 2N6283 2N6286 2N6287 16 amp npn darlington power transistors PDF

    mpsu57 cross

    Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s tf ps ps Max Max MHz Min Pd (Case) Watts @ 25°C h ^FE Min/Max @ lc Amp MPSU60


    OCR Scan
    MPSU10 MPSU02 MPSU60 MPSU52 MPSU03 MPSU04 MPSU01 MPSU51 MPSU01A MPSU51A mpsu57 cross PDF

    LT 6724

    Abstract: MPS6724 MPS6725
    Contextual Info: M~6724 M~6725 ONE WAU NPN S!LICON DARLINGTON 1 AMPLIFIER TRANSISTORS . collector-Emitter Breakdown voltage — V BR CES= 40 Vdc (Min) @ Ic = 1.0 mAdc MPS6724 50 Vdc (Min) @ Ic = 1.0 mAdc MPS6725 o High Current CapabiliW, IC of 1.0 Amp. ‘,!kg ,!: :,$, ,.


    Original
    MPS6724 MPS6725 DS5823 LT 6724 MPS6724 MPS6725 PDF

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


    OCR Scan
    MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference" PDF

    2N6727

    Abstract: 2N6726 DSA003749
    Contextual Info: PNP SILICON PLANAR MEDIUM ISSUE 1- POWER TRANSISTORS MARCH m 94 FEATURES * 40 volt VCEO * Gain of 50 at Ic = 1 Amp * Ptot=l Watt ABSOLUTE MAXIMUM lJ&x&K- RATINGS. PARAMETER — Voltage Collector-Emitter Voltage Emitter-Basa Vo[tage — Peak Pulse Current Continuous


    Original
    2N6726 2N6727 lr-50mA, 300Vs. 2N6727 2N6726 DSA003749 PDF

    DIODE T28

    Abstract: to127 ECG233 ECG238 ECG247 ECG229 darlington 40 A ECG253 ECG236 ECG244
    Contextual Info: P H IL IP S E C Q INC SHE D Transistors cont'd ECG Type ECG229 ECG232 Description and Application • hbSBREfl 0D07152 16T H E C G (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp


    OCR Scan
    00D71S2 ECG229 ECG232 ECG233 ECG234 ECG235 O-218) ECG257 ECG258) O-127 DIODE T28 to127 ECG238 ECG247 darlington 40 A ECG253 ECG236 ECG244 PDF

    2N6714

    Abstract: 2N6715
    Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6714 2N6715


    Original
    2N6714 2N6715 2N6714 100mA* 100mA, 2N6715 PDF

    2N6725

    Abstract: 2N6724 DSA003749
    Contextual Info: NPN SILICON PLANAR MEDIUM DARLINGTON POWER TRANSISTORS Lx&l ISSUE 1- MARCH 94 FEATURES * 50 volt VCED * Gain of 15kat * Ptot= 1 Watt Ic = 0.5 Amp ABSOLUTE MAXIMUM IJ9&&KL RATINGS. SYMBOL PARAMETER Collector-Base Emitter-Base ‘CBO 50 —— ‘CEO 40 ——


    Original
    15kat 2N6725 2N6724 500mA, 2N6725 2N6724 DSA003749 PDF

    TIP42

    Abstract: TIP41 TIP42A TIP42B TIP42C k 106
    Contextual Info: TIP 42 Series PNP POWER TRANSISTORS -40 ~ -100 VOLTS -6 AMP, 65 WATTS COMPLEMENTARY TO THE TIP41 SERIES The TIP42 Series power transistors are designed for use in general purpose amplifier and switching applications. PN P COLLECTOR Features: • 65W at 25° C case temperature


    OCR Scan
    TIP41 TIP42 T0-220AB O-220-AB TIP42A TIP42B TIP42C k 106 PDF

    D44E1

    Abstract: D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133
    Contextual Info: VERY HIGH GAIN D44E Series NPN POWER DARLINGTON TRANSISTORS 40-80 VOLTS 10 AMP, 50 WATTS COMPLEMENTARY TO THE D45E SERIES Applications: NPN COLLECTOR • Solenoid Driver • Lamp Driver • Relay Substitute • Switching Regulator CASE STYLE TO -220A B DIMENSIONS ARE IN INCHES AND M ILLIM ETERS


    OCR Scan
    04Sai4| D44E1 D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133 PDF

    PG2349

    Abstract: LEA-5 2N2811 2N2812 2N2813 2N2814 PG1335 PG1336 PG2335 PG2347
    Contextual Info: P I ELECTRONICS INC A *,4 : 10 AMP jj 100 VOLT j 40 WATT Î 60 MHz ] 1 TO-61 #»a |l tP,y'v ip V:it K-ï ¡g$ •¿-¡if-' *&? ;V . ?$ TO-61 • Low saturation voltage at maximum collector current • High voltage, BVceoi.u. to 100 volts B V c E O sus)


    OCR Scan
    2N2811 PG234 PG1337 PG1341 PG2349 LEA-5 2N2812 2N2813 2N2814 PG1335 PG1336 PG2335 PG2347 PDF

    TIP328

    Abstract: 2N4301 TIP32 applications TIP31 TIP32 TIP32A TIP32B TIP32C
    Contextual Info: TIP 32 Series PNP POWER TRANSISTORS -4 0 -1 0 0 VOLTS -3 AMP, 40 W ATTS COMPLEMENTARY TO THE TIP31 SERIES The T IP 32 Series power transistors are designed for use in general purpose amplifier and switching applications. PNP COLLECTOR Features: • Designed for complementary use with TIP31 series


    OCR Scan
    TIP31 TIP32 T0-220AB T0-220-AB TIP328 2N4301 TIP32 applications TIP32A TIP32B TIP32C PDF

    PGI*372

    Abstract: PGI367 PGI368 PGI369 PGI370 PGI371 PGI373 PGI374 PGI375
    Contextual Info: 0 0 4 3 592 • ’.ir.-.',- ; A~P i ELECTRONres •; INC .1^3 •# W ^DDHBS^B 10 AMP NPN PLANAR TO-61 isolated a 0000117 J - " -.P- ’ 60 MHz (typical) 40 WATT at 100°0 PGI367 MAXIMUM RATINGS at 25 °0 * PG1368 PG1371 PG1374 PGI369 PG1372 PG1375 Collector-Base VoLtage


    OCR Scan
    13AQ117 -r-33-n PGI367 PGI368 PGI370 PGI371 PGI373 PGI374 PGI369 PGI372 PGI*372 PGI374 PGI375 PDF

    Contextual Info: 0043592 A P I ELE CTRONICS TilC H 4M T~33~// 13 A P I 17 DE | 0 0 4 3 S T E 0000 117 5 10 AMP NPN PLANAR T0-61 isolated 60 MHz (typical) 40 WATT at 100°G MAXIMUM RATINGS at 25°C PGI368 PGI371 PGI374 PGI369 PGI372 PGI375 Collector-Base VoLtage 80 70 Emitter-Base Voltage •


    OCR Scan
    T0-61 PGI368 PGI371 PGI374 PGI369 PGI372 PGI375 PGI367 PGI37O PGI373 PDF

    PGI*372

    Abstract: PGI367 PGI368 PGI369 PGI373 PGI374 PGI375
    Contextual Info: 0043 5 9 2 A P I ELECTRONICS H DE | 0 0 4 3 S T E 4M T ~33~// 13 A P I 17 TilC 0000117 5 10 AMP NPN PLANAR T0-61 isolated 60 MHz (typical) 40 WATT at 100°G MAXIMUM RATINGS at 25°C PGI368 PGI371 PGI374 PGI369 PGI372 PGI375 Collector-Base VoLtage 80 70 Emitter-Base Voltage •


    OCR Scan
    33-i/ PGI367 PGI368 PGl369 PGI37O PGI37I PGI372 PGI373 PGI374 PGI375 PGI*372 PGI369 PDF

    100 amp npn darlington power transistors

    Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
    Contextual Info: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0


    Original
    NTE289A¸ NTE385¸ NTE184¸ NTE196¸ NTE181¸ NTE175¸ NTE311¸ NTE85¸ NTE287¸ NTE382 100 amp npn darlington power transistors NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP PDF