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    40 AMP COLLECTOR CURRENT Search Results

    40 AMP COLLECTOR CURRENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK111G
    Toshiba Electronic Devices & Storage Corporation Load Switch IC, 1.1 to 5.5 V, 3.0 A, Inrush current reducing / Reverse current blocking, WCSP6C Datasheet
    TCK301G
    Toshiba Electronic Devices & Storage Corporation Load Switch IC, 2.3 to 28 V, 3.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP9 Datasheet
    TCK304G
    Toshiba Electronic Devices & Storage Corporation Load Switch IC, 2.3 to 28 V, 3.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP9 Datasheet
    TCK305G
    Toshiba Electronic Devices & Storage Corporation Load Switch IC, 2.3 to 28 V, 3.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP9 Datasheet
    TCK321G
    Toshiba Electronic Devices & Storage Corporation Load Switch IC, 2.3 to 36 V, 2.0 A, Inrush current reducing / Reverse current blocking / Flag indicate, WCSP16C Datasheet

    40 AMP COLLECTOR CURRENT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ECG245

    Abstract: DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG229 darlington 40 A ECG238 ECG234 ECG191
    Contextual Info: Transistors cont d ECG Type ECG229 ECG232 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base. Volts Description and Application bv NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter


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    ECG229 ECG232 ECG233 ECG234 ECG23S O-218) ECG257 O-127 ECG258 ECG257) ECG245 DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain darlington 40 A ECG238 ECG191 PDF

    2N6714

    Abstract: 2N6715 DSA0037489 DSA003748
    Contextual Info: 2N6714 2N6715 — NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES vcE~ * 40 volt * Gain of 50 at Ic= 1 Amp * PTOt=1 Watt ABSOLUTE MAXIMUM PARAMETER SYMBOL — Collector-Base Voltage Collector-Emitter Emitter-Base ~ RATINGS. ‘CBO


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    2N6714 2N6715 le50mA, 2N6714 2N6715 DSA0037489 DSA003748 PDF

    17K100

    Abstract: lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K
    Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD16K, 17K SERIES 225 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage P M D 16K , 17K80 P M D 16K , 17K100 FEATURES • Electrical specifications guaranteed for operating junction temperature range of


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    PMD16K, 17K100 lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K PDF

    2N6284

    Abstract: 2N6283 2N6286 2N6287 16 amp npn darlington power transistors
    Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286,2N6287 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SY M B O L Collector Em itter Voltage 2N6283, 2N6286 2N6284, 2N6287 Vdc 80 100 Vdc V cB O 80 100 Em itter Base Voltage


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    2N6283, 2N6284, 2N6286, 2N6287 2N6286 2N6284 2N6283 2N6286 2N6287 16 amp npn darlington power transistors PDF

    mpsu57 cross

    Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s tf ps ps Max Max MHz Min Pd (Case) Watts @ 25°C h ^FE Min/Max @ lc Amp MPSU60


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    MPSU10 MPSU02 MPSU60 MPSU52 MPSU03 MPSU04 MPSU01 MPSU51 MPSU01A MPSU51A mpsu57 cross PDF

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


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    MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference" PDF

    2N6727

    Abstract: 2N6726 DSA003749
    Contextual Info: PNP SILICON PLANAR MEDIUM ISSUE 1- POWER TRANSISTORS MARCH m 94 FEATURES * 40 volt VCEO * Gain of 50 at Ic = 1 Amp * Ptot=l Watt ABSOLUTE MAXIMUM lJ&x&K- RATINGS. PARAMETER — Voltage Collector-Emitter Voltage Emitter-Basa Vo[tage — Peak Pulse Current Continuous


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    2N6726 2N6727 lr-50mA, 300Vs. 2N6727 2N6726 DSA003749 PDF

    DIODE T28

    Abstract: to127 ECG233 ECG238 ECG247 ECG229 darlington 40 A ECG253 ECG236 ECG244
    Contextual Info: P H IL IP S E C Q INC SHE D Transistors cont'd ECG Type ECG229 ECG232 Description and Application • hbSBREfl 0D07152 16T H E C G (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp


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    00D71S2 ECG229 ECG232 ECG233 ECG234 ECG235 O-218) ECG257 ECG258) O-127 DIODE T28 to127 ECG238 ECG247 darlington 40 A ECG253 ECG236 ECG244 PDF

    2N6714

    Abstract: 2N6715
    Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6714 2N6715


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    2N6714 2N6715 2N6714 100mA* 100mA, 2N6715 PDF

    2N6725

    Abstract: 2N6724 DSA003749
    Contextual Info: NPN SILICON PLANAR MEDIUM DARLINGTON POWER TRANSISTORS Lx&l ISSUE 1- MARCH 94 FEATURES * 50 volt VCED * Gain of 15kat * Ptot= 1 Watt Ic = 0.5 Amp ABSOLUTE MAXIMUM IJ9&&KL RATINGS. SYMBOL PARAMETER Collector-Base Emitter-Base ‘CBO 50 —— ‘CEO 40 ——


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    15kat 2N6725 2N6724 500mA, 2N6725 2N6724 DSA003749 PDF

    TIP42

    Abstract: TIP41 TIP42A TIP42B TIP42C k 106
    Contextual Info: TIP 42 Series PNP POWER TRANSISTORS -40 ~ -100 VOLTS -6 AMP, 65 WATTS COMPLEMENTARY TO THE TIP41 SERIES The TIP42 Series power transistors are designed for use in general purpose amplifier and switching applications. PN P COLLECTOR Features: • 65W at 25° C case temperature


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    TIP41 TIP42 T0-220AB O-220-AB TIP42A TIP42B TIP42C k 106 PDF

    D44E1

    Abstract: D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133
    Contextual Info: VERY HIGH GAIN D44E Series NPN POWER DARLINGTON TRANSISTORS 40-80 VOLTS 10 AMP, 50 WATTS COMPLEMENTARY TO THE D45E SERIES Applications: NPN COLLECTOR • Solenoid Driver • Lamp Driver • Relay Substitute • Switching Regulator CASE STYLE TO -220A B DIMENSIONS ARE IN INCHES AND M ILLIM ETERS


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    04Sai4| D44E1 D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133 PDF

    TIP328

    Abstract: 2N4301 TIP32 applications TIP31 TIP32 TIP32A TIP32B TIP32C
    Contextual Info: TIP 32 Series PNP POWER TRANSISTORS -4 0 -1 0 0 VOLTS -3 AMP, 40 W ATTS COMPLEMENTARY TO THE TIP31 SERIES The T IP 32 Series power transistors are designed for use in general purpose amplifier and switching applications. PNP COLLECTOR Features: • Designed for complementary use with TIP31 series


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    TIP31 TIP32 T0-220AB T0-220-AB TIP328 2N4301 TIP32 applications TIP32A TIP32B TIP32C PDF

    Contextual Info: 0043592 A P I ELE CTRONICS TilC H 4M T~33~// 13 A P I 17 DE | 0 0 4 3 S T E 0000 117 5 10 AMP NPN PLANAR T0-61 isolated 60 MHz (typical) 40 WATT at 100°G MAXIMUM RATINGS at 25°C PGI368 PGI371 PGI374 PGI369 PGI372 PGI375 Collector-Base VoLtage 80 70 Emitter-Base Voltage •


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    T0-61 PGI368 PGI371 PGI374 PGI369 PGI372 PGI375 PGI367 PGI37O PGI373 PDF

    NTE12

    Abstract: NTE18 nte30 NPN pnp MATCHED PAIRS NTE11 NTE16 NTE17 NTE19 NTE20 NTE21
    Contextual Info: BI-POL AR TRANSISTORS Maximum Breakdown Voltage » Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) lc BVcbo B V ceo BVEbo h FE Pd »T T092


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    NTE12) NTE11) NTE30) NTE29) NTE32) NTE31) NTE37) 59alt NTE12 NTE18 nte30 NPN pnp MATCHED PAIRS NTE11 NTE16 NTE17 NTE19 NTE20 NTE21 PDF

    Contextual Info: 3DD13002B Switch Mode NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO


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    3DD13002B 270TYP PDF

    3DD13002B

    Contextual Info: 3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Value 400 600 6.0 1.0


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    3DD13002B 270TYP 3DD13002B PDF

    2n5684

    Contextual Info: ON Semiconductort PNP High−Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • • IC Continuous = 50 Amperes. DC Current Gain −


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    2N5684 2N5686 2n5684 PDF

    2N6282

    Contextual Info: ON Semiconductort NPN Darlington Complementary Silicon Power Transistors 2N6282 . . . designed for general−purpose amplifier and low−frequency switching applications. 2N6284* thru • High DC Current Gain @ IC = 10 Adc — • • PNP 2N6285 hFE = 2400 Typ — 2N6282, 2N6283, 2N6284


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    2N6282 2N6284* 2N6282, 2N6283, 2N6284 2N6285, 2N6286, 2N6287 2N6285 PDF

    NTE159

    Abstract: 6A28A nte129p NTE128 NTE102A NTE fm NTE100 NTE102
    Contextual Info: Maximum Breakdown Voltage NTE Type N um ber Polarity and Material Description and Application Case Style Diag. No. Maximum Collector Current Amps Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) •c BVcbo BVCeo BVebo Typical


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    NTE101) NTE103) NTE129) NTE129P) T0237 NTE159 6A28A nte129p NTE128 NTE102A NTE fm NTE100 NTE102 PDF

    MJE15029

    Abstract: MJE15031 mje15030 mje15031 MJE15028 MJE15030 transistor mje15030 MJE1503
    Contextual Info: MOTOROLA Order this document by MJE15028/D SEMICONDUCTOR TECHNICAL DATA NPN MJE15028* MJE15030* PNP MJE15029* MJE15031* Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes


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    MJE15028/D* MJE15028/D MJE15029 MJE15031 mje15030 mje15031 MJE15028 MJE15030 transistor mje15030 MJE1503 PDF

    transistor mje802

    Contextual Info: ON Semiconductor PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general−purpose amplifier and low−speed switching applications. MJE800 • High DC Current Gain — • • MJE802 hFE = 2000 Typ) @ IC


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    MJE700 MJE702 MJE703 MJE800 MJE802 MJE803 transistor mje802 PDF

    MJE15028

    Abstract: MJE15029 MJE15030 MJE15031
    Contextual Info: ON Semiconductor NPN MJE15028* Complementary Silicon Plastic Power Transistors MJE15030* PNP MJE15029* . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes • • hFE = 40 Min) @ IC = 3.0 Adc


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    MJE15028* MJE15030* MJE15029* MJE15028, MJE15029 MJE15030, MJE15031 220AB MJE15031* r14525 MJE15028 MJE15029 MJE15030 MJE15031 PDF

    Contextual Info: Maximum Breakdown Voltage Diag. No. Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBO BV ceo BVeb0 hFE Pd fT TO63 15 20 150 90 7 20 Min 200 20 High Current Amp, Fast Switch TO61 Isol 16 10 120 100 6 30 Min 115 30 NPN-Si


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    NTE92) 93MCP NTE92 NTE93 PDF