40 AMP COLLECTOR CURRENT Search Results

ECG245

Abstract: DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG229 darlington 40 A ECG238 ECG234 ECG191
Contextual Info: Transistors cont d ECG Type ECG229 ECG232 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base. Volts Description and Application bv NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter

2N6714

Abstract: 2N6715 DSA0037489 DSA003748
Contextual Info: 2N6714 2N6715 — NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES vcE~ * 40 volt * Gain of 50 at Ic= 1 Amp * PTOt=1 Watt ABSOLUTE MAXIMUM PARAMETER SYMBOL — Collector-Base Voltage Collector-Emitter Emitter-Base ~ RATINGS. ‘CBO

17K100

Abstract: lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K
Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD16K, 17K SERIES 225 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage P M D 16K , 17K80 P M D 16K , 17K100 FEATURES • Electrical specifications guaranteed for operating junction temperature range of

2N6284

Abstract: 2N6283 2N6286 2N6287 16 amp npn darlington power transistors
Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286,2N6287 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SY M B O L Collector Em itter Voltage 2N6283, 2N6286 2N6284, 2N6287 Vdc 80 100 Vdc V cB O 80 100 Em itter Base Voltage

mpsu57 cross

Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s tf ps ps Max Max MHz Min Pd (Case) Watts @ 25°C h ^FE Min/Max @ lc Amp MPSU60

transistor buv18a

Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min

2N6727

Abstract: 2N6726 DSA003749
Contextual Info: PNP SILICON PLANAR MEDIUM ISSUE 1- POWER TRANSISTORS MARCH m 94 FEATURES * 40 volt VCEO * Gain of 50 at Ic = 1 Amp * Ptot=l Watt ABSOLUTE MAXIMUM lJ&x&K- RATINGS. PARAMETER — Voltage Collector-Emitter Voltage Emitter-Basa Vo[tage — Peak Pulse Current Continuous

DIODE T28

Abstract: to127 ECG233 ECG238 ECG247 ECG229 darlington 40 A ECG253 ECG236 ECG244
Contextual Info: P H IL IP S E C Q INC SHE D Transistors cont'd ECG Type ECG229 ECG232 Description and Application • hbSBREfl 0D07152 16T H E C G (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp

2N6714

Abstract: 2N6715
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6714 2N6715

2N6725

Abstract: 2N6724 DSA003749
Contextual Info: NPN SILICON PLANAR MEDIUM DARLINGTON POWER TRANSISTORS Lx&l ISSUE 1- MARCH 94 FEATURES * 50 volt VCED * Gain of 15kat * Ptot= 1 Watt Ic = 0.5 Amp ABSOLUTE MAXIMUM IJ9&&KL RATINGS. SYMBOL PARAMETER Collector-Base Emitter-Base ‘CBO 50 —— ‘CEO 40 ——

TIP42

Abstract: TIP41 TIP42A TIP42B TIP42C k 106
Contextual Info: TIP 42 Series PNP POWER TRANSISTORS -40 ~ -100 VOLTS -6 AMP, 65 WATTS COMPLEMENTARY TO THE TIP41 SERIES The TIP42 Series power transistors are designed for use in general purpose amplifier and switching applications. PN P COLLECTOR Features: • 65W at 25° C case temperature

D44E1

Abstract: D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133
Contextual Info: VERY HIGH GAIN D44E Series NPN POWER DARLINGTON TRANSISTORS 40-80 VOLTS 10 AMP, 50 WATTS COMPLEMENTARY TO THE D45E SERIES Applications: NPN COLLECTOR • Solenoid Driver • Lamp Driver • Relay Substitute • Switching Regulator CASE STYLE TO -220A B DIMENSIONS ARE IN INCHES AND M ILLIM ETERS

TIP328

Abstract: 2N4301 TIP32 applications TIP31 TIP32 TIP32A TIP32B TIP32C
Contextual Info: TIP 32 Series PNP POWER TRANSISTORS -4 0 -1 0 0 VOLTS -3 AMP, 40 W ATTS COMPLEMENTARY TO THE TIP31 SERIES The T IP 32 Series power transistors are designed for use in general purpose amplifier and switching applications. PNP COLLECTOR Features: • Designed for complementary use with TIP31 series

Contextual Info: 0043592 A P I ELE CTRONICS TilC H 4M T~33~// 13 A P I 17 DE | 0 0 4 3 S T E 0000 117 5 10 AMP NPN PLANAR T0-61 isolated 60 MHz (typical) 40 WATT at 100°G MAXIMUM RATINGS at 25°C PGI368 PGI371 PGI374 PGI369 PGI372 PGI375 Collector-Base VoLtage 80 70 Emitter-Base Voltage •

NTE12

Abstract: NTE18 nte30 NPN pnp MATCHED PAIRS NTE11 NTE16 NTE17 NTE19 NTE20 NTE21
Contextual Info: BI-POL AR TRANSISTORS Maximum Breakdown Voltage » Maximum Collector Power Dissipation Watts Diag. No. Maximum Collector Current (Amps) Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) lc BVcbo B V ceo BVEbo h FE Pd »T T092

Contextual Info: 3DD13002B Switch Mode NPN Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO

3DD13002B

Contextual Info: 3DD13002B Switch Mode NPN Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Value 400 600 6.0 1.0

2n5684

Contextual Info: ON Semiconductort PNP High−Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high−power amplifier and switching circuit applications. • High Current Capability − • • IC Continuous = 50 Amperes. DC Current Gain −

2N6282

Contextual Info: ON Semiconductort NPN Darlington Complementary Silicon Power Transistors 2N6282 . . . designed for general−purpose amplifier and low−frequency switching applications. 2N6284* thru • High DC Current Gain @ IC = 10 Adc — • • PNP 2N6285 hFE = 2400 Typ — 2N6282, 2N6283, 2N6284

NTE159

Abstract: 6A28A nte129p NTE128 NTE102A NTE fm NTE100 NTE102
Contextual Info: Maximum Breakdown Voltage NTE Type N um ber Polarity and Material Description and Application Case Style Diag. No. Maximum Collector Current Amps Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) •c BVcbo BVCeo BVebo Typical

MJE15029

Abstract: MJE15031 mje15030 mje15031 MJE15028 MJE15030 transistor mje15030 MJE1503
Contextual Info: MOTOROLA Order this document by MJE15028/D SEMICONDUCTOR TECHNICAL DATA NPN MJE15028* MJE15030* PNP MJE15029* MJE15031* Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes

transistor mje802

Contextual Info: ON Semiconductor PNP MJE700 Plastic Darlington Complementary Silicon Power Transistors MJE702 MJE703 NPN . . . designed for general−purpose amplifier and low−speed switching applications. MJE800 • High DC Current Gain — • • MJE802 hFE = 2000 Typ) @ IC

MJE15028

Abstract: MJE15029 MJE15030 MJE15031
Contextual Info: ON Semiconductor NPN MJE15028* Complementary Silicon Plastic Power Transistors MJE15030* PNP MJE15029* . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes • • hFE = 40 Min) @ IC = 3.0 Adc

Contextual Info: Maximum Breakdown Voltage Diag. No. Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBO BV ceo BVeb0 hFE Pd fT TO63 15 20 150 90 7 20 Min 200 20 High Current Amp, Fast Switch TO61 Isol 16 10 120 100 6 30 Min 115 30 NPN-Si