40 AMP COLLECTOR CURRENT Search Results

ECG245

Abstract: DIODE T28 TO127 ECG250 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG229 darlington 40 A ECG238 ECG234 ECG191
Contextual Info: Transistors cont d ECG Type ECG229 ECG232 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base. Volts Description and Application bv NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter

2N6714

Abstract: 2N6715 DSA0037489 DSA003748
Contextual Info: 2N6714 2N6715 — NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES vcE~ * 40 volt * Gain of 50 at Ic= 1 Amp * PTOt=1 Watt ABSOLUTE MAXIMUM PARAMETER SYMBOL — Collector-Base Voltage Collector-Emitter Emitter-Base ~ RATINGS. ‘CBO

17K100

Abstract: lambda pmd16k100 PMD16K100 PMD17K100 PMD16K 17K80 PMD17K80 PMD16K80 PMD17K
Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS PMD16K, 17K SERIES 225 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage P M D 16K , 17K80 P M D 16K , 17K100 FEATURES • Electrical specifications guaranteed for operating junction temperature range of

ECG229

Abstract: ECG247 DIODE T28 ECG234 ECG251 ECG191 ECG2541 transistor ecg246 ECG232 ECG233
Contextual Info: Transistors cont'd Collector To Base. Volts b v Cbo Description and Application ECG Type ECG229 ECG232 (Maximum Ratings at T c = 25°C Unless Otherwise Noted) NPN-Si, VHF Ose, Mix, IF Am p 40 PNP-Si, Darlington Amp 30 Collector To Emitter Volts Base to Emitter

2n6726

Abstract: 2n6727
Contextual Info: 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * * 4 0 V o ltV CEO Gain of 50 at lc : 1 Amp * Ptot=1 Watt E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL 2N6726 Collector-Base Voltage V C BO -40 Collector-Emitter Voltage

ZTX360

Contextual Info: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ZTX360 ISSUE 2 – MARCH 94 FEATURES * 40 Volt VCEO * 1 Amp continuous current * Fast switching C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO

2N6726

Abstract: 2N6727
Contextual Info: 2N6726 2N6727 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6726 -40 2N6727

Contextual Info: • g lffjjA P I ELECTRONICS INC DG43STE DOOOOia ] 20 AMP j 90 VOLT i 100 WATT ^ 40 MHz Ü TO-3 sé ft ï p ' y éjji.Æ/ TO-3 _ • Linear hFE from SO mA to 20 amps Low saturation voltage at maximum collector current • High frequency ft = 40 MHz typical)

2N6284

Abstract: 2N6283 2N6286 2N6287 16 amp npn darlington power transistors
Contextual Info: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6283, 2N6284, 2N6286,2N6287 160 WATT 20 AMP CONTINUOUS, 40 AMP PEAK ‘ MAXIMUM RATINGS P A RA M ET ER SY M B O L Collector Em itter Voltage 2N6283, 2N6286 2N6284, 2N6287 Vdc 80 100 Vdc V cB O 80 100 Em itter Base Voltage

mpsu57 cross

Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s tf ps ps Max Max MHz Min Pd (Case) Watts @ 25°C h ^FE Min/Max @ lc Amp MPSU60

LT 6724

Abstract: MPS6724 MPS6725
Contextual Info: M~6724 M~6725 ONE WAU NPN S!LICON DARLINGTON 1 AMPLIFIER TRANSISTORS . collector-Emitter Breakdown voltage — V BR CES= 40 Vdc (Min) @ Ic = 1.0 mAdc MPS6724 50 Vdc (Min) @ Ic = 1.0 mAdc MPS6725 o High Current CapabiliW, IC of 1.0 Amp. ‘,!kg ,!: :,$, ,.

transistor buv18a

Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min

2N6727

Abstract: 2N6726 DSA003749
Contextual Info: PNP SILICON PLANAR MEDIUM ISSUE 1- POWER TRANSISTORS MARCH m 94 FEATURES * 40 volt VCEO * Gain of 50 at Ic = 1 Amp * Ptot=l Watt ABSOLUTE MAXIMUM lJ&x&K- RATINGS. PARAMETER — Voltage Collector-Emitter Voltage Emitter-Basa Vo[tage — Peak Pulse Current Continuous

DIODE T28

Abstract: to127 ECG233 ECG238 ECG247 ECG229 darlington 40 A ECG253 ECG236 ECG244
Contextual Info: P H IL IP S E C Q INC SHE D Transistors cont'd ECG Type ECG229 ECG232 Description and Application • hbSBREfl 0D07152 16T H E C G (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo NPN-Si, VHF Ose, Mix, IF Amp 40 PNP-Si, Darlington Amp

2N6714

Abstract: 2N6715
Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6714 2N6715

2N6725

Abstract: 2N6724 DSA003749
Contextual Info: NPN SILICON PLANAR MEDIUM DARLINGTON POWER TRANSISTORS Lx&l ISSUE 1- MARCH 94 FEATURES * 50 volt VCED * Gain of 15kat * Ptot= 1 Watt Ic = 0.5 Amp ABSOLUTE MAXIMUM IJ9&&KL RATINGS. SYMBOL PARAMETER Collector-Base Emitter-Base ‘CBO 50 —— ‘CEO 40 ——

TIP42

Abstract: TIP41 TIP42A TIP42B TIP42C k 106
Contextual Info: TIP 42 Series PNP POWER TRANSISTORS -40 ~ -100 VOLTS -6 AMP, 65 WATTS COMPLEMENTARY TO THE TIP41 SERIES The TIP42 Series power transistors are designed for use in general purpose amplifier and switching applications. PN P COLLECTOR Features: • 65W at 25° C case temperature

D44E1

Abstract: D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133
Contextual Info: VERY HIGH GAIN D44E Series NPN POWER DARLINGTON TRANSISTORS 40-80 VOLTS 10 AMP, 50 WATTS COMPLEMENTARY TO THE D45E SERIES Applications: NPN COLLECTOR • Solenoid Driver • Lamp Driver • Relay Substitute • Switching Regulator CASE STYLE TO -220A B DIMENSIONS ARE IN INCHES AND M ILLIM ETERS

PG2349

Abstract: LEA-5 2N2811 2N2812 2N2813 2N2814 PG1335 PG1336 PG2335 PG2347
Contextual Info: P I ELECTRONICS INC A *,4 : 10 AMP jj 100 VOLT j 40 WATT Î 60 MHz ] 1 TO-61 #»a |l tP,y'v ip V:it K-ï ¡g$ •¿-¡if-' *&? ;V . ?$ TO-61 • Low saturation voltage at maximum collector current • High voltage, BVceoi.u. to 100 volts B V c E O sus)

TIP328

Abstract: 2N4301 TIP32 applications TIP31 TIP32 TIP32A TIP32B TIP32C
Contextual Info: TIP 32 Series PNP POWER TRANSISTORS -4 0 -1 0 0 VOLTS -3 AMP, 40 W ATTS COMPLEMENTARY TO THE TIP31 SERIES The T IP 32 Series power transistors are designed for use in general purpose amplifier and switching applications. PNP COLLECTOR Features: • Designed for complementary use with TIP31 series

PGI*372

Abstract: PGI367 PGI368 PGI369 PGI370 PGI371 PGI373 PGI374 PGI375
Contextual Info: 0 0 4 3 592 • ’.ir.-.',- ; A~P i ELECTRONres •; INC .1^3 •# W ^DDHBS^B 10 AMP NPN PLANAR TO-61 isolated a 0000117 J - " -.P- ’ 60 MHz (typical) 40 WATT at 100°0 PGI367 MAXIMUM RATINGS at 25 °0 * PG1368 PG1371 PG1374 PGI369 PG1372 PG1375 Collector-Base VoLtage

Contextual Info: 0043592 A P I ELE CTRONICS TilC H 4M T~33~// 13 A P I 17 DE | 0 0 4 3 S T E 0000 117 5 10 AMP NPN PLANAR T0-61 isolated 60 MHz (typical) 40 WATT at 100°G MAXIMUM RATINGS at 25°C PGI368 PGI371 PGI374 PGI369 PGI372 PGI375 Collector-Base VoLtage 80 70 Emitter-Base Voltage •

PGI*372

Abstract: PGI367 PGI368 PGI369 PGI373 PGI374 PGI375
Contextual Info: 0043 5 9 2 A P I ELECTRONICS H DE | 0 0 4 3 S T E 4M T ~33~// 13 A P I 17 TilC 0000117 5 10 AMP NPN PLANAR T0-61 isolated 60 MHz (typical) 40 WATT at 100°G MAXIMUM RATINGS at 25°C PGI368 PGI371 PGI374 PGI369 PGI372 PGI375 Collector-Base VoLtage 80 70 Emitter-Base Voltage •

100 amp npn darlington power transistors

Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
Contextual Info: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0