4 NPN TRANSISTOR IC Search Results

TRANSISTOR GENERAL DIGITAL L6

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 NXP Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor

SC06960

Contextual Info: 2STN5551 Surface mounting NPN transistor Features • ■ NPN transistor in SOT-223 surface mounting package 4 Low VCE sat behavior Application ■ 1 Linear amplifier 2 3 SOT-223 Description The device is an NPN transistor manufactured by epitaxial planar technology.

IC-3479

Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits

transistor CD 910

Abstract: IEI-1213 MEI-1202 MF-1134 uPA1426 darlington transistor for audio power application npn darlington array EL120 EM202
Contextual Info: SILICON TRANSISTOR ARRAY / P 1 A 4 2 6 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The,uPA1426 is NPN silicon epitaxial Darlington Power Transistor PACKAGE DIMENSION (in m illim eters) A rray that built in 4 circu its designed for driving solenoid,

uPA1456H

Abstract: IC-3521 PA1456 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed

PA1476

Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed

ic 8705

Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed

B35AP

Contextual Info: Philips Sem iconductors bbS3S31 □OSISb'l T13 • APX NPN 4 GHz wideband transistor ^ Product specification ^ BFQ34T N AriER PHILIPS/PISCRETE b'lE P PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The

Contextual Info: 2N6989 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N6987 • General purpose switching • 4 Transistor Array • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E

2N6988

Abstract: 2N6990 2N6990J 2N6990JS 2N6990JV 2N6990JX
Contextual Info: 2N6990 Silicon NPN Transistor Data Sheet Description Applications Complement to the 2N6988 • General purpose switching • 4 Transistor Array • NPN silicon transistor Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E

MBT3904DW

Abstract: 1N916 MMBT3904W
Contextual Info: MBT3904DW Dual General Purpose Transistor NPN+NPN Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value

transistor fp 1016

Abstract: BFQ34T ON4497 transistor 1548 b FP 801 QS 100 NPN Transistor npn transistor dc 558 transistor 828 "NPN Transistor" d 772 transistor
Contextual Info: Product specification P hilips Sem iconductors -T-33-QS NPN 4 GHz wideband transistor PHILIPS INTERNATIONAL BFQ34T SbE D PINNING DESCRIPTION NPN transistor in a plastic SOT37 envelope, intended for wideband amplification applications. The device features high output voltage

NEC NF 932

Abstract: 2SC4092
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4092 is an NPN silicon epitaxial transistor designed for lownoise amplifier at VHF, UHF band.

transistor smd zG

Abstract: npn zg SMD Transistor zG TRANSISTOR 610 smd
Contextual Info: Philips Sem iconductors Product specification NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic SOT143 surface mounting envelope with double emitter bonding. PIN 4 DESCRIPTION 3 Code: E6 It is intended for use in wideband

TRANSISTOR DATA

Abstract: chip die npn transistor
Contextual Info: 2N6989 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching • 4 Transistor Array • NPN silicon transistor • Screening and processing per MIL-PRF-19500 • JAN level 2N6987J • JANTX level (2N6987JX)

Contextual Info: MBT3904DW Dual General Purpose Transistor NPN+NPN Silicon 1 2 3 6 5 1 4 3 SOT-363 SC-88 6 5 2 4 NPN+NPN Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics

nec 473

Abstract: transistor cc 5551 nec 561
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC2586 is an NPN silicon epitaxial transistor designed ^ 9 .4 MAX. for UHF-band medium pow er amplifiers.

PA1434H

Abstract: iei-1209 pa1434 IEI-1213 MEI-1202 MF-1134
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1434 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1434 is NPN silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,

IC-3520

Abstract: uPA1454H PA1454 IEI-1213 MEI-1202 MF-1134 iei-1209
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY µPA1454 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1454 is NPN silicon epitaxial Power Transistor in millimeters Array that built in 4 circuits designed for driving solenoid,

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4093 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION The 2S C 4 0 9 3 is an NPN silicon epitaxial transistor designed for low PACKAGE DIMENSIONS Units: mm noise amplifier at VH F, U H F and C A TV band.

transistor D 2588

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC4092 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4092 is an NPN silicon epitaxial transistor designed for low- Units: mm noise amplifier at VHF, UHF band.

sot-343 as

Abstract: a 4x transistor MOTOROLA TRANSISTOR SOT-343 318M MBC13900 motorola sps transistor 3AA2
Contextual Info: Order this document by MBC13900PP/D MBC13900 Product Preview The RF Building Block Series NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ bipolar IC process. It is housed in the 4–lead SC–70

MPSA06 transistor

Abstract: MPSA56 TRANSISTOR
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MPSA06 Small Signal Transistors NPN TO-92 0.181 (4 .6 ) FEATURES 0 .1 4 2 ( 3 . 6 ) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type, the PNP transistor MPSA56 is recommended.