4 CHANNEL CLASS AB 300 WATT Search Results

W050

Contextual Info: PACIFIC PM2105 MONOLITHICS DATASHEET 1 Watt RFIC Power Amplifier - 800 to 2000 MHz Operation . Features • • • • >1 Watt Output Power @ 5 V 55% Efficiency Multiple Biasing Modes 3 to 6 Volt Operation o nn cm ¡S m □ r PM2105 mu □r Applications •

Contextual Info: GHz20060 60 Watts PEP, 26 Volts, Class AB 1800 - 2000 MHz Updated Feb 2001 GENERAL DESCRIPTION CASE OUTLINE The GHz20060 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF PEP output power over the band 1800-2000 MHz. This transistor is

W050

Contextual Info: PM2105 PACIFIC MONOUTHICS DATASHEET 1 Watt RFIC Power Amplifier - 800 to 2000 MHz Operation . Features • • • • >1 W att Output Power @ 5 V 55% Efficiency Multiple Biasing Modes 3 to 6 Volt Operation □r o r PS m mu □ r PM2105 m or Applications •

MIL-STD-462C

Abstract: connectors m24308 AB1275 DBMME25PF ab35s 4-40 UNC-2B SPECIFICATION AB100 MIL-S-901C
Contextual Info: www.martekpower.com Series AB DC/DC Converters NOTE: THE AB SERIES IS NOT RECOMMENDED FOR NEW DESIGNS DUE TO PARTS OBSOLESCENCE. WE RECOMMEND THE RB SERIES AS A 100% COMPATIBLE DIRECT REPLACEMENT. 200 watt 50 watt 20 watt 35 watt 100 watt A comprehensive line of full military DC-DC converters ideally suited for

TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Contextual Info: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),

16 pin 4x4 amplifier gsm

Abstract: amplifier QFN16 MCH185A3R3CK
Contextual Info: ECP100 PRELIMINARY DATA SHEET 1.0 WATT POWER AMPLIFIER Product Features Applications Basestations and Repeaters CDMA/GSM/TDMA/EDGE PCS/CDMA2000/IMT2000/UMTS Multi-carrier systems 100 - 2300MHz 31 dBm P1dB High Linearity: 47 dBm OIP3 High Efficiency: PAE > 45%

Contextual Info: ECP200 PRELIMINARY DATA SHEET 2.0 WATT POWER AMPLIFIER Product Features Applications 100 - 2300MHz 33 dBm P1dB High Linearity: 49 dBm OIP3 11 dB Linear Gain at 1.96GHz Single 5V Supply High Reliabilty Class A or AB operation Basestations and Repeaters CDMA/GSM/TDMA/EDGE

ALC5622

Abstract: ALC5622-GRT ALC5622-GR JATR-1076-21 MAX11111 ALC56
Contextual Info: ALC5622-GR ALC5622-GRT I2S AUDIO CODEC + 1.3W CLASS AB/D MONO SPEAKER AMPLIFIER DATASHEET Rev. 1.0 08 April 2008 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047

ALC5621

Abstract: ALC5621-GRT ALC56 REG26 JATR-1076-21 bluetooth headphone
Contextual Info: ALC5621 I2S AUDIO CODEC + 1.3W CLASS AB/D MONO SPEAKER AMPLIFIER DATASHEET Rev. 1.0 27 December 2007 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047

ALC5622

Abstract: ALC5622-GR ALC5622-GRT ALC56 5v 3W AUDIO AMPLIFIER CIRCUIT DIAGRAM audio mixer JATR-1076-21 36ah
Contextual Info: ALC5622-GR ALC5622-GRT I2S AUDIO CODEC + 1.3W CLASS AB/D MONO SPEAKER AMPLIFIER DATASHEET Rev. 1.1 13 November 2008 Track ID: JATR-1076-21 Realtek Semiconductor Corp. No. 2, Innovation Road II, Hsinchu Science Park, Hsinchu 300, Taiwan Tel.: +886-3-578-0211. Fax: +886-3-577-6047

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

CPE 2-129

Abstract: N 341 AB PANASONIC MA 645 911 ZO 607 MA A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

ATC 1084

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRFG35003ANT1 transistor c 413 ATC 1084 -33
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

MRFG35003ANT1

Abstract: ATC 1084 ic atc 1084 PANASONIC MA 645 911 A113 A114 A115 AN1955 C101 JESD22
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 0, 4/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: www.martekpower.com Series AM AC-DC / DC-DC Converters 50 watt triple output 50 watt single output 100 watt The AM series AC-DC/DC-DC power supplies can accept a wide range of input powers making them true multiple input power supplies. The AM models are uniquely qualified for a variety of military applications

95a 324

Abstract: 1fa MARKING IS95A aclr ip3
Contextual Info: AP501 PCS-band 4W HBT Amplifier Module Product Features Product Information Product Description • 1930 – 1990 MHz Functional Diagram The AP501 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 32.5 dB gain, while being able to

IS95A

Abstract: IS-95A AP501 AP501-PCB JESD22-A114
Contextual Info: AP501 The Communications Edge TM PCS-band 4W HBT Amplifier Module Product Features Product Information Product Description • 1930 – 1990 MHz Functional Diagram The AP501 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage

6 FMR 40

Contextual Info: AM011037WM-BM-R AM011037WM-FM-R February 2010 Rev 2 DESCRIPTION AMCOM’s AM011037WM-BM-R and AM011037WM-FM-R are part of the GaAs pHEMT MMIC power amplifier series. These high efficiency MMICs are 2-stage GaAs pHEMT power amplifiers biased at +8V. The input and

AM011037WM-BM/FM-R

Abstract: amcomusa mmics
Contextual Info: AM011037WM-BM-R AM011037WM-FM-R July 2010 Rev 3 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM011037WM-BM/FM-R is part of the GaAs pHEMT MMIC power amplifier series. This high efficiency MMIC is a 2-stage GaAs pHEMT power amplifier biased at +8V. The input and inter-stage matching networks cover

Contextual Info: Freescale Semiconductor Technical Data Rev. 11, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19030LR3 MRF19030LSR3 Designed for class AB PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and

MRF19030

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19030R3 MRF19030SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and

MRF19030

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.

j721

Abstract: j435 MRF19030
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19030 MRF19030R3 MRF19030S MRF19030SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with f r equenc ies f ro m 1 .8 to 2 .0 GH z . Su i ta b l e for FM, TD MA , C D MA and

40watt amplifier

Abstract: SA1106 40-watt IS-136
Contextual Info: W a t k i n s - J o h n s o n : T h e C e l l E x t e n d e r s Power Amplifiers SA1106 TDMA 40-Watt 1.93 GHz to 1.99 GHz Linear Power Amplifier Module • ■ ■ ■ 40 Watts TDMA IS-136 +48 dBm P1dB 45 dB Gain -30°C to +85°C W OUTLINE DRAWING 4 PIN, 4.48