Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    3VD499600YL Search Results

    3VD499600YL Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    12N60 equivalent

    Abstract: 12N60 mosfet 600V 60A TO-220 silan mosfet 600V 60A TO-220 Power MOSFET Wafer
    Contextual Info: 3VD499600YL 3VD499600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD499600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø 3 1 Advanced termination scheme to provide enhanced


    Original     		3vd499600ylo-22012n6012n60 equivalent+3mosfet 600v 60a to-220 silanmosfet 600v 60a to-220power mosfet wafer PDF

    12N60

    Abstract: 12n60 dc
    Contextual Info: 3VD499600YL 3VD499600YL 高压MOSFET芯片 描述 Ø 3VD499600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；


    Original     		3vd499600yl3vd499600yln600vmoso-220+212n6012n60 dc PDF