3SK3 Search Results

3SK302

Abstract: s-mini 3SK306
Contextual Info: Panasonic H ig h F r e q u e n c y FE T s 3SK302 Tentative , 3SK306(Tentative) Silicon N -Channel MOS 3SK 302 For UHF amplification U n it : m m • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. -e h EE

3SK305

Abstract: 3SK301
Contextual Info: Panasonic H ig h F r e q u e n c y FE T s 3SK301 Tentative , 3SK305(Tentative) Silicon N -C hannel MOS 3SK301 F o rV H F amplification U n it : m m • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. EE

Hitachi DSA00118

Abstract: 3SK309 l2726 21L47 327 MARKIG
Contextual Info: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A Z 2nd. Edition November. 1996 Features • • • Capable of low voltage operation (VDS = 1.5 to 3 V) Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) High power gain

3SK318

Abstract: DSA003643
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition Feb. 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

3SK320

Abstract: L 0946
Contextual Info: TOSHIBA TENTATIVE 3SK320 TOSHIBA FIELD EFFECT TRANSISTOR UHF BAND LOW NOISE AMP GaAs N-CHANNEL DUAL GATE MES TYPE 3SK320 UHF BAND MIX MAXIMUM RATINGS Ta = 25°C SYMBOL RATING UNIT Gate 1-Drain Voltage Gate 2-Drain Voltage VG1DO V V Gate 1-Source Voltage

marking L4F

Abstract: Hitachi DSA001652
Contextual Info: 3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712A Z 2nd. Edition Dec. 1998 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)

Hitachi DSA002759

Contextual Info: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline

3SK303

Abstract: S-Mini 3SK307
Contextual Info: Panasonic High Frequency FETs 3SK303 Tentative , 3SK307(Tentative) Silicon N-Channel MOS Unit : mm 3SK303 For VHF amplification 0 . 65 ± 0 .1 5 - 13 • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. • Downsizing of sets by mini or S-mini type package, and automatic

MM1225

Contextual Info: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier HITACHI ADE-208-472 A 2nd. Edition Features • Capable of low voilage operation VDS = 1.5 to 3 V • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)

3SK300

Abstract: 3SK300ZR-TL-E
Contextual Info: 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier REJ03G0818-0300 Previous ADE-208-449A Rev.3.00 Aug.10.2005 Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline RENESAS Package code: PLSP0004ZA-A

3SK319

Abstract: Hitachi DSA002759
Contextual Info: 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

ADE-208-472A

Abstract: "marking code Z" "0.6"V Hitachi DSA002750
Contextual Info: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472A Z 2nd. Edition November. 1996 Features • Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)

marking is "yb-"

Abstract: Hitachi DSA002759
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

Hitachi DSA002783

Contextual Info: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711B Z 3rd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)

3SK39

Abstract: VM-10V
Contextual Info: 3SK39 3SK39 N VHF * MOS 3S FE T /S i N-Ouuwcl MOS-FET Amplifier » /F e a tu re s •« » fin PC j f t f c t l w 'H i c h pow er gain P G • /'L o w feedback c a p a c ita n c e (C fM) • v>- M C f M M S 'f K * r * |l L . t V * i - f . / I n c o r p o r a t i n g g a te

3sk304

Abstract: 3SK308 k308
Contextual Info: Panasonic H igh F req u en cy FETs 3SK304 Tentative , 3SK308(Tentative) Silicon N-Channel MOS 3SK304 For UHF amplification Unit : mm • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. Be -EE 3 • Downsizing of sets by mini or S-mini type package, and automatic

3SK301

Abstract: 3SK305
Contextual Info: Panasonic High Frequency FETs 3SK301 Tentative , 3SK305(Tentative) Silicon N-Channel MOS Unit : mm 3SK301 For VHF amplification 0.65±0.15 - 13 • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. • Downsizing of sets by mini or S-mini type package, and automatic

3SK302

Abstract: 3SK306
Contextual Info: Panasonic H igh F req u en cy FETs 3SK302 Tentative , 3SK306(Tentative) Silicon N-Channel MOS 3SK302 For UHF amplification Unit : mm • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. -EE 3 Be • Downsizing of sets by mini or S-mini type package, and automatic

DUAL GATE MOS-FET

Abstract: 3SK317 DSA003643
Contextual Info: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 Z 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline

3sk285

Contextual Info: 3SK285 High Frequency FETs 3SK302 Tentative , 3SK306(Tentative) Silicon N-Channel MOS 3SK302 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95

3sk285

Contextual Info: 3SK285 High Frequency FETs 3SK301 Tentative , 3SK305(Tentative) Silicon N-Channel MOS 3SK301 For VHF amplification 1.5 –0.3 0.65±0.15 0.5R 0.95 1.9±0.2 4 1 3 2 +0.1 0.4 –0.05 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the conventional product.

Contextual Info: 3SK285 High Frequency FETs 3SK304 Tentative , 3SK308(Tentative) Silicon N-Channel MOS 3SK304 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95

dual-gate YB

Abstract: 3SK318 SC-82AB Hitachi DSA00336
Contextual Info: 3SK318 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-600 Z 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295