3L7255 Search Results

Contextual Info: M O T O R O L A SC O I O D E S / O P T O J | 6367255 3M MOTOROLA SC D e | l,3L7255 Q 0 3 Ô 1 Q 7 T *|“ 34c DIODES/OPTO 38107 D T " 6 SILICON TUNING DIODE DICE (continued) MVC1403 DIE NO. — SERIES LINE SOURCE — DV54 i t This die provides performance equal to or better than that of

b2045

Abstract: B2045 motorola B2035 2045c Single Schottky diode b2045 2N6277
Contextual Info: MOTOROLA Order this document by MBR2035CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR2035CT MBR2045CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

Contextual Info: MOTOROLA Order this document by BAL99LT1/D SEMICONDUCTOR TECHNICAL DATA S w itching Diode BAL99LT1 ANODE 3 O CATHODE O 2 MAXIMUM RATINGS Rating Symbol Value Unit Vr 70 Vdc if 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C R o ja 556 °C/W Pd 300 mW 2.4 mW/°C

MCR106-2

Abstract: MCR1062
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCR106 Series* Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors ‘ Motorola preferred devices except MCR106-3 P N PN d e v ic e s d e s ig n e d f or high v o lu m e c o n s u m e r a p p lic a tio n s su ch a s

FAG 29 diode

Contextual Info: MOTOROLA Order this document by MTB4N&0E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB4N80E1 TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead Motorola Preferred Device TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS on = 3-0 OHM N-Channel Enhancement-Mode Silicon Gate