3J MARKING Search Results

3J10

Abstract: PG03JSUSC
Contextual Info: SEMICONDUCTOR PG03JSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 3J 1 0 1 2 1 No. Item Marking Description Device Mark 3J PG03JSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

3J-2J1

Abstract: 3J-2
Contextual Info: Three Electrode Gas Tube Surge Arrester Part Number: 3J-2J1 3J-2J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant

3J-5J1

Abstract: 3J-5 u 711
Contextual Info: Three Electrode Gas Tube Surge Arrester Part Number: 3J-5J1 3J-5J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant

3J-1J1

Abstract: 3J-1
Contextual Info: Three Electrode Gas Tube Surge Arrester Part Number: 3J-1J1 3J-1J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant

3J-6J1

Abstract: 6j1 tube 3J-6
Contextual Info: Three Electrode Gas Tube Surge Arrester Part Number: 3J-6J1 3J-6J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant

3J-7J1

Abstract: 3J-7 surge arrester Ac
Contextual Info: Three Electrode Gas Tube Surge Arrester Part Number: 3J-7J1 3J-7J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant

3J-4J1

Abstract: 3J-4
Contextual Info: Three Electrode Gas Tube Surge Arrester Part Number: 3J-4J1 3J-4J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant

3J-3J1

Abstract: 3J-3
Contextual Info: Three Electrode Gas Tube Surge Arrester Part Number: 3J-3J1 3J-3J1 φ 7.5 ± 0.2 7.0 ± 0.5 max. 12.0 φ 1.0 Applications: Transient Voltage Surge Suppression Telephone Network Interfaces Modems/Cable Modems xDSL Modems and Peripherals Building Entry/Outside Plant

BC858W

Contextual Info: SEMICONDUCTOR BC858W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking 3J No. 2000. 12. 27 Item Marking Description Device Mark 3 BC858W hFE Grade J A J , B(K), C(L) Revision No : 0 1/1

marking 3U 3T 3C diode

Abstract: 30BQ080 marking 3U 3T diode 30BF20 30bq040 30BQ060 30BF10 30BF100 30BF40 30BF60
Contextual Info: SMC PART MARKING CATHODE BAND SIDE INTERNATIONAL RECTIFIER LOGO 3C PART NUMBER Example: 30BQ015 PART NUMBER EXAMPLES 3C = 30BQ015 3F = 30BQ040 3H = 30BQ060 3J = 30BQ080 3P = 30BF10 3S = 30BF20 3T = 30BF40 3U = 30BF60 3V = 30BF80 3X = 30BF100

bc860

Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
Contextual Info: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_

Contextual Info: DB3X407K Silicon epitaxial planar type Unit: mm For high frequency rectification • Features  Short reverse recovery time trr  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 3J

BC857B UNI

Abstract: BC847 BC857 BC857A BC857B BC858 BC858A BC858B
Contextual Info: BC857 BC858 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K 2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS VERY LOW NOISE AF AMPLIFIER NPN COMPLEMENTS FOR BC857 IS BC847

3J marking

Abstract: BC858 MARK 01
Contextual Info: SEMICONDUCTOR BC858 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 3J 1 2 Item Marking Description Device Mark 3 BC858 hFE Grade J J, K, L * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

sot-23 Marking 3D

Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Contextual Info: PNP General Purpose Transistor: BC856/857/858 Features: t
Low current max.100mA t
Low voltage (max.65v) Applications: t
SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L

LVJ DIODE

Abstract: ERC38
Contextual Info: ERC 38 ia : Outline Drawings FAST RECOVERY DIODE *1.0 I 1 28MIN — 7.5 — 28 MIN- — : Features 3J£-V ti! • X -f • S Super high speed switching. *. Marking tf Low VF in turn on A5 —3 —K: È Color code : White « iW iS High voltage by mesa design.

Contextual Info: T O SH IB A 3JH45 TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 3J H4 5 SWITCHING TYPE POWER SUPPLY APPLICATIONS = 600V • Repetitive Peak Reverse Voltage Vrr m • Average Forward Current If a v = 3-0a • Very Fast Reverse-Recovery Time trr = 200ns (Max.)

Contextual Info: 12 11 10 8 73780 ✓ MATERIAL NUMBER ASSIGNMENT 7 3 -U R I H H U- LE fr]- L g a i I C=3J- L g g i IB B I IC=ZH- U B I IIH ) I H - B )- -OPTIO NAL MARKINGS SEE NOTE 4 & MATERIAL NUMBER ASSIGNMENT r \ r i r MATERIALS: 2. FINISH:

Contextual Info: «e a a 1981 MICRON MT4C4001 J L 1 MEG X 4 DRAM I DRAM 1 MEG x 4 DRAM STANDARD OR LOW POWER, EXTENDED REFRESH 3J > FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J L) • Industry-standard x4 pinout, timing, functions and

Contextual Info: 11 12 10 8 73780 ✓ MATERIAL NUMBER ASSIGNMENT 7 3 -U R I H H U- LE fr]- L g a i I C=3J- L g g i IB B I IC=ZH- U B I IIH ) I H - B )- -OPTIO NAL MARKINGS SEE NOTE 4 & MATERIAL NUMBER ASSIGNMENT MATERIALS: 2. FINISH: ' T DIM "H"

mt4c1024dj7

Abstract: mt4c1024dj-7
Contextual Info: |v > ll = R O MT4C1024 L 1 MEG X 1 DRAM Í\J DRAM 1 MEG X 1 DRAM LOW POWER, EXTENDED REFRESH O 3J > FEATURES PIN ASSIGNMENT (Top View • Industry standard x l pinout, timing, functions and packages • High-performance, CM OS silicon-gate process • Single +5V ±10% power supply

7W00F

Abstract: 7S00F tunnel oven
Contextual Info: [3j 1. External and Internal Structure The drawings in Figure 3-1 show the external designs and internal structures o f various series m odels. The IC chip is set on the "bed" at the center o f the pack­ age. Wire leads connect the IC chip terminals to the lead frame. The package

Contextual Info: :1 0: 41 PM COMET TETRA Register Descriptions Document Released ,1 3J ul y, 20 06 11 PM4359 Th ur sd ay COMET TETRA of Pa rtm in er In co n FOUR-CHANNEL COMBINED T1/J1/E1 TRANSCEIVER/FRAMER Released Issue No. 2: June, 2006 Do wn lo ad ed by C on te n tT ea