3I 46 Search Results

TTL 74293

Abstract: D127 74LS90 74290 74LS92 74LS93 7490 D124 93S05 fairchild ttl 7492
Contextual Info: FAIRCHILD DIGITAL TTL [Clock to Q Output Delay-ns Typ Power Dissipation mW (Typ) Logic/Connection Diagram X 40 33 160 D120 3I,6A,9A 2x5 — T_ 40 33 160 D121 3I,6A,9A 54LS/74LS90 2x5 — "L 50 33 45 D121 3I,6A,9A 54/7492 2x6 — "L 40 33 160 D122 3I,6A,9A

JCIQ-176M

Contextual Info: I&Q Modulator JCIQ-176M+ Typical Performance Data CARRIER FREQ. CONVERSION LOSS SIDEBAND REJECTION CARRIER REJECTION LO-I/Q LO+I/Q LO-I/Q LO+I/Q 3rd HARMONIC SUPPRESSION 5th HARMONIC SUPPRESSION DC OFFSET LO-3I/Q LO+3I/Q LO-5I/Q LO+5I/Q MHz (dB) (-dBc) (-dBc)

JCIQ-176M

Contextual Info: I&Q Modulator JCIQ-176M Typical Performance Data CARRIER FREQ. CONVERSION LOSS SIDEBAND REJECTION CARRIER REJECTION LO-I/Q LO+I/Q LO-I/Q LO+I/Q 3rd HARMONIC SUPPRESSION 5th HARMONIC SUPPRESSION DC OFFSET LO-3I/Q LO+3I/Q LO-5I/Q LO+5I/Q MHz (dB) (-dBc) (-dBc)

SPCJ 4D29

Abstract: SPTU 240 SPAJ 120 abb spaj RELAY SPAJ 120 c 4D29 SPAJ 140 IRF 9710 SPAJ160C ABB SPAJ 120
Contextual Info: SPAJ 160 C Capacitor protection relay User´s manual and Technical description 3I > ∆I 3I < 2 I n = 1A I n = 1A f n = 50Hz 5A I 5A (∆I ) I 5 60Hz L1 I L2 I L3 ∆I c IRF SPAJ 160 C 80.265V – ~ 18.80V – RESET STEP I b >/I n U aux k SPCJ 4D40

ES1983S

Abstract: ES1921S ES1983 ess Maestro pinout maestro 3i
Contextual Info: ESS Technology, Inc. DESCRIPTION The ES1983 Maestro-3i PCI audio-modem accelerator combines advanced audio and modem functionality in a highly integrated PCI solution for high-performance consumer multimedia notebook PC applications. It uses the high-bandwidth

DO-213AA

Abstract: TZQ5221B TZQ5222B TZQ5223B TZQ5224B TZQ5225B TZQ5267B IR LF 0038
Contextual Info: 3IÌB5 TZQ5221B - TZQ5267B 500mW SURFACE MOUNT ZENER DIODE LITEMZI POWER SEMICONDUCTOR y Features • • • • • 500m W Power Dissipation High Stability Low Noise Outline Similar to JED EC D O -213AA Hemetic Package Mechanical Data_ •

s m r708

Abstract: Kf617
Contextual Info: A?2?-BC,2D-E,FG-" HI260,;-"%%. !"#$%&!"#'% )*+,-.%-/0123&3-!45-46789,3 :6;-"-<=>'%-<=-);?@3=13316@ K+91I?216@3 • JKLMC>JHN)'//*0+'#0,". ■ F*#&'80%8)+'/'+0#O)EHI).O.#$2)'//*0+'#0," ■ N0%8G./$$()('#')+,223"0+'#0," ■ H0%0#0:$()10($, A,3I;1+216@ J,?28;,3

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30AS-03 HIGH-SPEED SWITCHING USE FS30AS-03 OUTLINE DRAWING Dimensions in mm 6.5 5 .0 1 0 .2 -h 1.0 l] 0.9MAX. 0 .5 1 0 .2 0.8 J I 3I /H q T Hl w e Q w V d s s . 30V rDS (ON (MAX). 46mi2

Contextual Info: UA745-3I Linear ICs Dual-Channel Audio Power/Output Amplifier status Outp Pwr Min. @R load (Ohms) Upper 3dB Frequency (Hz) AV (dB) Min.46 Input Resistance Min. (Ohms) THD Max. (%)500m Quies. Pwr (W)41m Nom. Supp (V)6.3 Minimum Operating Temp (øC) Maximum Operating Temp (øC)125

Contextual Info: fax id: 6138 1CY 7C37 3i CY7C373i UltraLogic 64-Macrocell Flash CPLD Features Functional Description • • • • 64 macrocells in four logic blocks 64 I/O pins 5 dedicated inputs including 4 clock pins In-System Reprogrammable ISR™ Flash technology

Contextual Info: 13 12 10 TOTAL NUMBER OF DIM "A" SIGNAL CONTACTS 3 L6 72 ASSEMBLY P/N 7377 l-O I* DIM "B" DIM "H" 22.00 I5.05 7377 I - 0 2 * * 72 3L6 22. 00 6.05 7377 I - 0 3 * * 72 3I.6 22.00 I0.05 7377 I- 11* I44 55.6 46. 00 I5.05 7377 I- I2* I44 55.6 46. 00 6.05 7377 I- I3*

crt tube 9 pin

Abstract: compass crt tube CATHODE RAY TUBE siemens tube cathode ray Scans-0017397
Contextual Info: MAZDA 3I C I 6"MAGNETIC ALUMINISED CATHODE RAY TUBE Indirectly heated— for Radio D.F. Compass High Brightness Level RATING Heater Voltage (volts) V), 4.0 Heater C u rre n t (amps) 1^ 0.72 Maximum Anode Voltage (volts) V a (max) 10,000* M inim um Anode Voltage (volts)

2SC3584

Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583
Contextual Info: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for

1L034

Abstract: 1L0341 1L034FV22G0CA001 1L0545B12E0CA201 1L0531Y 1l0341a23d0ca201 1L034FV23D0CA001 1L034FG72E0CA002 10mm ultra bright led
Contextual Info: ULTRA BRIGHT LED LAMPS ROUND TYPES Chip Package 3I 5I Absolute Maximum Ratings Electro-optical Data (At 20mA) Viewing Angle Drawing Vf Iv 2T 1/2 No. 'O Pd If Peak (V) (mcd) (deg) (nm) (mw) (mA) (mA) Typ Max Typ. Part No. Material/Emitted Color Peak Wave

P 721

Abstract: ds1607 20/GL1HY73
Contextual Info: Chip LED Devices S1E D • fil607Tfi G L 1D D 73 SHARP CORP 00D7173 Series 7bS « S R P J GL1DD73 Series Compact Chip LED Devices T- H'h -3I ■ Model No. GL1TR73 Red High-luminosity GL1PR73 Red GL1HD73 Red GL1HS73 Sunsetorange GL1HY73 Yellow GL1EG73 Yellow-green

L4825

Abstract: L4825M T-58-H
Contextual Info: HICRO LI NE AR 33E D bO^Nlô OOGli'ïb E O H L May 1990 T-5J-//-3I Micro Linear ML4825 High Frequency Power Supply Controller GENERAL DESCRIPTION easily implemented. Please refer to the FB3480 datasheet for more information. The ML4825 High Frequency PWM Controller is an IC

Contextual Info: FLUX LED LAMPS Chip Package Part No. Material/Emitted Color 3I 5I Peak Wave Length Od nm L-074 Ratings Data (At 30mA) Appearance Vf (V) 'O Pd If Peak (nm) (mw) (mA) (mA) Iv (mcd) Viewing Angle Drawing 2T 1/2 No. (deg) Typ Max Typ. 1P03S1V23D0CJ301 AlGaInP/Red

CQFP 208

Contextual Info: Features I I I I I I Av P T1D^OU cocn A 54[-[3i t î 5iip>erscaler Micr o Pi 0 ceÎS S'or• . ■ Full militarized QED RM5260 microprocessor ■ Dual Issue superscalar QED RISCMark - can issue one integer and one floating-point instruction per cycle

GIJ diode

Abstract: GGT DIODE YG801C06 A410 DIODE C06 15 iej mi
Contextual Info: YG801C06 5 a : Outline Drawings SCHOTTKY BARRIER DIODE : Features • 3i y ft i s n * 7^ - ; u ffi&i&m 7 Insulated package by fully molding. •te V F Low V f Connection Diagram Super high speed switching. • y \ s - T - ftttcj&Kfi High reliability by planer design.

BIR-BO13E4G-1

Abstract: BIR-BO03E4G-1 BIR-BM13E4G-2 BIR-NM13C1 BIRBO13V4V2 BIR-BO13K4Q BIR-BM1331 BIR-BN0331 BIR-BO0331 L-11250
Contextual Info: INFRARED EMITTING DIODE-END LOOK Chip Package 3I 5I Part No. Material Wavelength Op Lens Color VF V @IF=50mA Ee(mW/sr) @IF=50mA Typ Max Min Typ BIR-BM1331 GaAIAs/GaAs 940 1.25 1.50 11.78 33.40 BIR-BM1331-A GaAIAs/GaAs 940 1.25 1.50 11.78 33.40 BIR-BO1331

MA4F600-298

Abstract: transistor bul 3040 MA4F600 bul 3040 fet ft 30 GHZ
Contextual Info: M/A-COn SEMICONDUCTOR "t 3 D~| SbMBSlM ODDDbMb T r- Am 3i -ss MA4F600 Series Gallium Arsenide Low Noise Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F600 series of GaAs FETs is a low cost 0.8 ¡im gate length GaAs FET. The low noise

generators winding circuit diagrams

Abstract: ASEA motor RTXP 18 ASEA overheating relay design asea RK92-11 asea over current relay 023BA ASEA motor oil RXME 1
Contextual Info: Catalogue RK 65-26 E Edition 1 1981-04 File R, Part 1 Thermal overcurrent relays • 3> 3I> For preventing dangerous overheating in motors, genera­ tors, transformers and conductors when these are subject to overloads. • Avs ilabl e with seven d if fere nt time eo nstants

EN 61210

Abstract: 61058 EN61210 400M0E3 50E3 T100 61210 MARQUARDT
Contextual Info: 35.7 ±0-6 16 ± ! 0.3 ±0.25 CD • E& l O +1 r- oo Flachstecker plug-in 1 11 1 11 - ^ CM <=> +1 i_n 6,3 x 0,8 EN 61058 / EN 61210 / DIN 46244 A-A B-B 2:1 2:1 +0.14 3 . 4 _ o j x 3I§ :^ + 0.02 NC NO AuFschri Ft Marking 1006 ji Wechsler 1-polig single pole changeover

chmc S 3302

Abstract: chmc CHMC 46 CHMC 37 78282-Y54
Contextual Info: ii I I 3i* i" i i i i 4-4 7\ CL 762B2-7XX 1.3um - Au MIN. OVER 50 76282-4XX 76282-3XX PLATING CODE 1.3um - — — 50 Ni MIN. SnPb OVER Ni 5 um 0.1 uiri - - SnPb MIN. OVER - -— 200 4 p" Ni MIN. SnPb OVER Ni 0.75 um - —