transistor IRF 630
Abstract: MTD10N08E ym 238
Contextual Info: MOTOROLA SC X S T R S /R F IME D I fc>3fci7254 QEH04a3 1 MOTOROLA I Order this data sheet by MTD10N08E/D E3 SEMICONDUCTOR TECHNICAL DATA MTD10N08E Designer's Data Sheet TM OS IV Pow er Field Effect Transistor IM-Channel Enhancement-Mode D PA K for Surface Mount or Insertion Mount
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3fci7254qeh04a3mtd10n08e/dmtd10n08e+3cm262transistor irf 630ym 238
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MD6003
Abstract: MD6003F MD6001
Contextual Info: MOTORCLA SC XSTRS/R F 15E 0 I b3b7254 0G0bSS3 S | r-Ä 7 -Ä 7 M AXIM U M RATINGS MD6001.F MD6003 MD6002,F Sym bol MD6003F M06001,2 Rating Unit Vdc Collector-Emitter Voltage VcEO Collector-Base Voltage VCBO Emitter-Base Voltage V e BO 5.0 Vdc lc 500 mAdc Collector Current — Continuous
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b3b7254md6001md6003md6002+3md6003fm06001mq6001
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MHT10P10
Abstract: C63H q 1363
Contextual Info: M OTO ROLA SC 12E D X S TR S/R F MOTOROLA I b3b?254 GGflMEIG G | Order this data sheet by MHT10P10/D S E M IC O N D U C T O R TECHNICAL DATA Product Preview P o w e r Field E ffe c t T r a n s is t o r P-Channel Enhancem ent-Mode Silicon Gate T M O S T M O S PO W ER FET
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mht10p10/dt0-220mk145bpmht10p10+3c63h1c63hq 1363
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OJ31
Abstract: A4T SOT23 YT-45 MPQ6427
Contextual Info: MOTOROLA SC 12E D I tBb?s5M ooatoa? i I XSTRS/R F M A X I M U M R A T IN G S Rating Sym bol Collector-Emitter Voltage MPQ6426 MPQ6427 V cEO Collector-Base Voltage VcBO Vdc 30 40 C A SE 646-06, STYLE 1 TO-116 Vdc 40 50 MPQ6426 MPQ6427 Emitter-Base Voltage Collector Current— Continuous
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mpq6426mpq6427o-116y14xm+3oj31a4t sot23yt-45
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