3EZ150 Search Results

Contextual Info: 3EZ150D1 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage150 @I(Z) (A) (Test Condition)5.0m Tolerance (%)1.0 P(D) Max. (W)3.0 Z(z) Max. (ê) Dyn. Imped.550 Temp Coef pp/10k13 Maximum Operating Temp (øC)150õ

Contextual Info: 3EZ150D10 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage150 @I(Z) (A) (Test Condition)5.0m Tolerance (%)10 P(D) Max. (W)3.0 Z(z) Max. (ê) Dyn. Imped.550 Temp Coef pp/10k13 Maximum Operating Temp (øC)200õ

Contextual Info: 3EZ150D2 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage150 @I(Z) (A) (Test Condition)5.0m Tolerance (%)2.0 P(D) Max. (W)3.0 Z(z) Max. (ê) Dyn. Imped.550 Temp Coef pp/10k13 Maximum Operating Temp (øC)150õ

Contextual Info: 3EZ150D4 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage140 @I(Z) (A) (Test Condition)5.0m Tolerance (%)4.0 P(D) Max. (W)3.0 Z(z) Max. (ê) Dyn. Imped.550 Temp Coef pp/10k Maximum Operating Temp (øC)150õ

DO15

Abstract: 3EZ11 3EZ12 3EZ13 3EZ14 3EZ15 3EZ16 3EZ200 DO-15
Contextual Info: DATA SHEET 3EZ11~3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11 to 200 Volts Power - 3.0 Watts DO-15 Unit: inch mm FEATURES .034(.86) .028(.71) • Built-in strain relief • Glass passivated iunction • Low inductance 1.0(25.4) MIN.

3EZ11

Abstract: 3EZ12 3EZ13 3EZ14 3EZ15 3EZ16 3EZ200
Contextual Info: 3EZ11 THRU 3EZ200 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts DO-15 FEATURES l Low profile package l Built-in strain relief l Glass passivated junction l Low inductance l Excellent clamping capability l Typical ID less than 1 A above 11V

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

3EZ19D5

Abstract: 3EZ10D5 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5 3EZ17D5 3EZ18D5 3EZ20D5 3EZ22D5
Contextual Info: JGD 3EZ3.9D5 O thru 3EZ200D5 3W SILICON ZENER DIODE VOLTAGE RANG 3.9 to 200 Volts FEATURES DO-41 * Zener voltage 3. 9V to 200V * High surge current rating * 3 Watts dissipation in a normally 1 watt package MECHANICAL CHARACTERISTICS * CASE:Molded encapsulation,axial lead package.

718 mx diode

Abstract: 3 Watt Zener Diode 3EZ10D5 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5 3EZ15D5 3EZ17D5 3EZ18D5
Contextual Info: niCROSEMI CORP b i i s a b s o o o n m Mt,i • n s c STE D 3 E Z 3 .9 D 5 thru 3 EZ 2 0 0 D 5 Microsemi Corp. f r tm ih SA STA A SC O TTSD A LE. Á7. F o r m o re m fo rm a iio n imII: <6021941 6?<M SILICON 3 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3 .9V to 200 V

d002at

Abstract: 3ez6
Contextual Info: WILLAS FM120-M+ THRU FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V ZENER 3WSOD-123+ SERIES PACKAGE Pb Free Product Package outline Features 3EZ process design, excellent power dissipation offers • BatchSeries better reverse leakage current and thermal resistance.

Contextual Info: 3EZ3.3D5 – 3EZ200D5 3.0W ZENER DIODE WON-TOP ELECTRONICS Pb Features  Glass Passivated Die Construction       3.0W Power Dissipation 3.3V – 200V Nominal Zener Voltage 5% Standard Vz Tolerance Low Inductance For Use in Voltage Regulator or Reference

motorola ZENER diode marking code

Contextual Info: M O T OR OLA SC IME D | b3fc725S G o a o t m DI ODE S/ OP TO 5 I Order this data sheet by 3EZ3.9D5/D MOTOROLA SEM ICONDUCTOR T-ÍI-J5" TECHNICAL DATA 3EZ3.9D 5 thru Designer's Data Sheet 3EZ400D 5 3-Watt Surm etic 30 Silico n Zener Diodes 3-WATT ZENER REGULATOR

3W ZENER

Contextual Info: 3EZxxxD5 SERIES 3W Zener Diodes .034 0.9 DIA. .028 (0.7) 1.0 (25.4) MIN. .300 (7.6) .230 (5.8) .140 (3.6) DIA. .104 (2.6) PRIMARY CHARACTERISTICS 1.0 (25.4) MIN. VRRM 6.2~200V TJ max 150°C DO-15 Dimensions in inches and (millimeters) Features Mechanical Data

3EZ10

Abstract: 3EZ11 3EZ12 3EZ13 3EZ15 3EZ200 DO-204AC
Contextual Info: 3EZ1 . 3EZ200 3 W 3EZ1 . 3EZ200 (3 W) Silicon-Power-Zener Diodes (non-planar technology) Silizium-Leistungs-Zener-Dioden (flächendiffundierte Dioden) Version 2008-08-14 Maximum power dissipation Maximale Verlustleistung ±0.05 Nominal Z-voltage Nominale Z-Spannung

3EZ10D5

Abstract: 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5
Contextual Info: Certificate TH97/10561QM 3EZ3.9D5 Series Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current

Contextual Info: 3EZ Series SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * * * * Complete Voltage Range 3.9 to 400 Volts High peak reverse power dissipation High reliability Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2)

mzd15

Abstract: MZD6.2 1M110ZS5 MZD120 MZD18 zener motorola mzd47 zener diode 182 ZENER DIODE t2 6k motorola ZENER
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA GENERAL DATA 1 to 3 Watt DO-41 Surmetic 30 Zener Voltage Regulator Diodes 1–3 WATT DO-41 SURMETIC 30 GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 1 to 3 Watt Surmetic 30 Silicon Zener Diodes 1 TO 3 WATT ZENER REGULATOR

3EZ10D5

Abstract: 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5 3EZ15D5 3EZ16D5 3EZ17D5
Contextual Info: 3EZ Series SILICON ZENER DIODES VZ : 3.9 - 400 Volts PD : 3 Watts DO - 41 FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2)

3EZ12D10

Abstract: 1D10 7D10 8D10 9D10
Contextual Info: 3EZ3.9D10 Series SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free 1.00 25.4 MIN. 0.107 (2.7)

3ez160

Contextual Info: MCC 3EZ11 THRU 3EZ200
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features 3 W Glass Passivated l Low Profile Package l Built-in Strain Relief l Glass Passivated Junction l Low Inductance

3EZ4.3D10

Abstract: 1D10 7D10 9D10
Contextual Info: Certificate TH97/10561QM 3EZ3.9D10 Series Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current

3EZ10D5

Abstract: 3EZ11D5 3EZ12D5 3EZ13D5 3EZ14D5
Contextual Info: Certificate TH97/10561QM 3EZ3.9D5 Series Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.9 - 400 Volts PD : 3 Watts FEATURES : * Complete Voltage Range 3.9 to 400 Volts * High peak reverse power dissipation * High reliability * Low leakage current

3EZ10

Abstract: 3EZ11 3EZ12 3EZ13 3EZ15 3EZ16 3EZ18 3EZ20 3EZ200
Contextual Info: BL GALAXY ELECTRICAL 3EZ1 - 3EZ200 Vz RANGE: 1.0, 3.9 - 200V POWER DISSIPATION: 3.0 W ZENER DIODES FEATURES For us e in s tabilizing and clipping curcuits with high DO - 15 power rating. The zener voltages are graded according to the international E 12 s tandard. Sm aller voltage tolerances

Contextual Info: 3EZ3.9D5 thru 3EZ200D5 Microsemi Corp. The a<cae e*p¡?rr.s SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 602 941-6300 FEATURES . SILICON 3 WATT ZEN ER DIODE ZENER VOLTAGE 3 .9 V to 200V • HIGH SURGE CURRENT RATIN G • 3 W ATTS DISSIPATIO N IN A NORM ALLY 1 W A TT PACKAGE