3E TRANSISTOR Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors Featrues LMBTH10WT1G z We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION Device Marking Shipping LMBTH10WT1G 3E 3000/Tape&Reel LMBTH10WT3G 3E 10000/Tape&Reel 1 2

xc3s500e fg320

Abstract: xc3s500e VQG100 XC3S500E FGG320 NUMONYX xilinx bpi intel j3d XC3S250E M25PXX xc3s1600e fg320 XC3S500E DS312-3
Contextual Info: Spartan-3E FPGA Family: Data Sheet R DS312 v3.8 August 26, 2009 Product Specification Module 1: Spartan-3E FPGA Family: Introduction and Ordering Information Module 3: DC and Switching Characteristics DS312-1 (v3.8) August 26, 2009 • • • • • •

XAPP623

Abstract: XC3S500E-FT256 simulation model electrolytic capacitor XC3S500E FG256 FT256 UG112 XAPP489 hyperlynx PCB echo sound
Contextual Info: Application Note: Spartan-3E Family R Four- and Six-Layer, High-Speed PCB Design for the Spartan-3E FT256 BGA Package XAPP489 v1.0 October 31, 2006 Summary This application note addresses low-cost, four- to six-layer, high-volume printed circuit board (PCB) layout for a Spartan -3E FPGA in the FT256 1 mm BGA package. The impact of highspeed signals and signal integrity (SI) considerations for low layer count PCB layouts is also

Contextual Info: User's Guide SBOU043B – February 2007 – Revised April 2009 DEM-OPA-SSOP-3E Demonstration Fixture 1 Description The DEM-OPA-SSOP-3E demonstration fixture is a generic, unpopulated printed circuit board PCB for triple 2:1 multiplexers in the SSOP-16 package. Figure 1 shows the package pinout supported by this

00100a05

Abstract: l0342
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-23005-3E ASSP 1 B 1 B 3 V Single Power Supply Audio Interface Unit AIU M B 86437

Contextual Info: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage

FMMTA42

Abstract: FMMTA92 TS16949 semiconductors 3E
Contextual Info: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage

3D smd marking

Abstract: SMD Transistors 3f SMD IC ts 4141 BC856BW SOT SMD IC BC856W-BC858W BC856AW BC856W BC857AW BC857BW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G

transistor equivalent ksh200

Abstract: TLE7368G ksh200 equivalent TLE7368 TLE7368-3E TLE7368E TLE7368-2E 4139 sensor ksh200 TRANSISTOR equivalent TLE368E
Contextual Info: TLE7368 Next Generation Micro Controller Supply TLE7368G TLE7368E TLE7368-2E TLE7368-3E Data Sheet Rev. 2.1, 2010-11-22 Automotive Power TLE7368 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

TLE7368

Contextual Info: TLE7368 Next Generation Micro Controller Supply TLE7368G TLE7368E TLE7368-2E TLE7368-3E Data Sheet Rev. 2.1, 2010-11-22 Automotive Power TLE7368 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Contextual Info: U <3E,mi- ~onaiictoi iJ-^ioauati, Line. TELEPHONE: (973 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA Silicon NPN Power Transistors 2SC2542 DESCRIPTION With TO-220C package •High voltage ,high speed switching •High reliability

BC857BT

Contextual Info: BC857AT/BT/CT SOT-523 Transistor PNP SOT-523 1. BASE 2. EMITTER 3. COLLECTOR Features — — Ideally suited for automatic insertion For Switching and AF Amplifier Applications MARKING: BC857AT=3E; BC857BT=3F; BC857CT=3G Dimensions in inches and (millimeters)

BC856BW

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E

CSA1162

Abstract: CSA1162GR CSA1162Y-3E
Contextual Info: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CSA1162Y-3E CSA1162GR G —3F 3.0_ 2.8 0.48 038 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 2.4 J.02 0.8ST

FMMTA42R

Abstract: FMMTA42 FMMTA92 7e sot23 3E SOT23
Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS FMMTA42 ✪ ISSUE 4 – MARCH 2001 PARTMARKING DETAIL – FMMTA42 – FMMTA42R – 3E 7E E C B COMPLEMENTARY TYPES – FMMTA42 – FMMTA92 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA42 UNIT Collector-Base Voltage

S29JL032H70

Contextual Info: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_

Contextual Info: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMTA42 ISSUE 5 – SEPTEMBER 2007 ✪ PARTMARKING DETAIL – FMMTA42 – FMMTA42R – 3E 7E E C B COMPLEMENTARY TYPES – FMMTA42 – FMMTA92 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL FMMTA42 UNIT Collector-Base Voltage

FMMTA43

Abstract: FMMTA42R FMMTA42 FMMTA43R FMMTA92 FMMTA93 FMMT-A42R
Contextual Info: FMMTA42 FMMTA43 FMMTA42 FMMTA43 SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 – JANUARY 1996 ✪ PARTMARKING DETAIL – FMMTA42 – 3E FMMTA43 – 1E FMMTA42R – 7E FMMTA43R – 5E 160 fT Transition Frequency MHz hFE Static Forward Current Transfer Ratio

bc860

Abstract: bc858 BC857 BC857A BC857B BC858A BC858B BC859A BC859B BC860A
Contextual Info: BC857/BC858 BC859/BC860 SMALL SIGNAL PNP TRANSISTORS • ■ ■ ■ Type Marking BC857A 3E BC857B 3F BC858A 3J BC858B 3K BC859A 4A BC859B 4B BC860A 4E BC860B 4F SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING

transistor smd 3E

Abstract: TRANSISTOR SMD 330 TRANSISTOR SMD MARKING CODE EM TRANSISTOR SMD MARKING CODE WT equivalent transistor smd 3 em 7 free transistor and ic equivalent data SMD Transistor 070 R smd transistor 3K transistor smd 3E npn transistor smd marking NA sot-23
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking Code = 3E VHF/UHF Transistor

BC856B

Abstract: BC856 BC856A BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P-N -P transistors M arking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm

820 572 711

Abstract: 2SC4321
Contextual Info: 2SC4321 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4321 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ldB, |S2le|2= 13dB f = 1GHz 2.1 ±0.1 1.25 ±0.1 oo + 1 3E- MAXIMUM RATINGS (Ta = 25°C)