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    3DD301B Datasheets Context Search

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    3DD301B

    Abstract: tc2530
    Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD301B DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 50V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 2.0V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.


    Original     		3dd301btc2530 PDF

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


    Original     		2sa914o-1262sa9002sc2556+112sc2556alm317ko-220lm317tthinki transistor catalogaudio amplifier icbd249c catalogaudio high power amplifier3dd3012sc32292sa747 PDF