3D NPN 400V Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR NPN SOT–23 FEATURES  High Collector-Emitter Voltage  Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 1 3D 2 K E 2 D PACKING INFORMATION

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS „ FEATURES *Collector-Emitter voltage: VCEO=400V UTC MMBTA44 VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW

3D NPN 400V

Abstract: MMBTA44 mmbta44g 400V 100MA NPN SOT23 MMBTA44-AE3-R MMBTA44L-AE3-R MMBTA44 3d utc mpsa 44
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS „ FEATURES *Collector-Emitter voltage: VCEO=400V UTC MMBTA44 VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW

npn 400V switching transistor sot-23

Abstract: MMBTA44 MMBTA44-AE3-R MMBTA44L-AE3-R MMBTA45-AE3-R npn 400V sot-23 sot-23 Marking 3D
Contextual Info: UNISONIC TECHNOLOGIES CO.,LTD. MMBTA44/45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 *Collector-Emitter voltage: VCEO=400V UTC MMBTA44 VCEO=350V (UTC MMBTA45) *Collector current up to 300mA *Complement to UTC MMBTA94/93 *Power Dissipation: PD(max)=350mW

sot 23 3d

Abstract: SOT-23 3D sot-23 Marking 3D MMBTA44 MMBTA45
Contextual Info: UTC MMBTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V MMBTA44 VCEO=350V(MMBTA45) *Collector current up to 300mA *Complement to MMBTA94/93 *Collector Dissipation: Pc(max)=350mW 2 1 3 APPLICATION

MMBTA44 3D

Abstract: MMBTA44 MPSA44 3D NPN 400V sot-23 Marking 3D MMBTA45 3101S
Contextual Info: UTC MMBTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V MMBTA44 VCEO=350V(MMBTA45) *Collector current up to 300mA *Complement to MMBTA94/93 *Collector Dissipation: Pc(max)=350mW 2 1 3 APPLICATION

texas instruments tip48

Abstract: T0-22Q TIP50 Texas Instruments texas instruments tip47 texas instruments tip50 1N914 2N6127 TIP47 TIP48 TIP49
Contextual Info: T E X A S I N S T R -COPTO} " ^ DlT^öTblTEb □□3LöS4 "6961726 TEXAS INSTR OPTO 62C 36824 TIP47, TIP48, TIP49, TIP50 N-P-N SILICON POWER TRANSISTORS R E V IS E D O C TO BER 1 9 8 4 4 0 W at 2 5 ° C C a se Temperature 1 A Continuous Collector Current

RE8RB31BU

Abstract: LC1D40A RE8TA41BU A9F74 b40 B2 RECTIFIER 400V LC1DT60A LC1-D50A LC1D40008 XUX0ARCTT16T LR2K
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sot-23 MARKING CODE 3d

Abstract: BTA1759N3 BTC4505N3 MARKING 3D SOT-23
Contextual Info: Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505N3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.

sot-23 MARKING CODE 3d

Abstract: 3D marking sot23 BTNA44N3 BTPA94N3 sot-23 Marking 3D
Contextual Info: CYStech Electronics Corp. Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTNA44N3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA.

SOT-89 marking 3d

Abstract: BTA1759M3 BTC4505M3
Contextual Info: CYStech Electronics Corp. Spec. No. : C210M3 Issued Date : 2003.05.15 Revised Date :2005.10.21 Page No. : 1/5 High Voltage NPN Epitaxial Planar Transistor BTC4505M3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.

Contextual Info: MMBTA44 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A FEATURES L S Power dissipation 2 PCM: 3 Top View 1 0.35 W D Collector current ICM: B G 0.3 A Collector-base voltage

npn transistor 0.1A 400V sot-23

Abstract: npn high voltage transistor 500v sot23 vbe 10v, vce 500v NPN Transistor top marking 3d npn NPN VCEO 500V sot23 MMBTA44 3D NPN 400V TRANSISTOR MARKING 3D sot-23 Marking 3D
Contextual Info: MMBTA44 NPN Silicon 500V, 0.1A, 350mW Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  High Voltage Transistor A L 3 3 MARKING C B Top View 1 Product Marking Code MMBTA44

Contextual Info: KSC5054 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED HIGH VOLTAGE SWITCHING INDUSTRIAL USE l-PACK ABSOLUTE MAXIMUM RATINGS Rating Unit Collector Base Voltage Characteristic V cbO Symbol 500 V Collector Emitter Voltage V cE O 400 Emitter Base Voltage V ebo Base Current

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

ML-370

Abstract: DM-305A 4410M rms225 BECKMAN 3020b digital capacitance meter
Contextual Info: Test Equipment COMPLETE LINE Analog Multimeter AM-10 • Pocket Size - Very Economical • 6 Functions, 10 Ranges • ±4% Basic DC Accuracy • 2” Mirrored Scale • 2KΩ/V AC & DC Input Sensitivity • Fuse and Diode Protection • DC Current • Resistance

Contextual Info: SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1.02 FEATURES W (Tamb=25℃) 1.60±0.05 0.35 1.9 Collector current ICM: 0.3 A Collector-base voltage V(BR)CBO: 500 V Operating and storage junction temperature range

Jiangsu Changjiang Electronics Technology

Abstract: 3D NPN 400V 3d sot-23 MMBTA44
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES 0.35 W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current 0.2 A ICM: Collector-base voltage

MMBTA44

Abstract: TRANSISTOR MARKING 3D
Contextual Info: MMBTA44 SOT-23-3L MMBTA44 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES 0.35 W (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM: 0.2 A Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range 2. 80¡ À0. 05

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR 1.02 FEATURES W (Tamb=25℃) 1.60±0.05 0.35 1.9 Collector current ICM: 0.3 A Collector-base voltage

MMBTA44 3d

Abstract: transistor k 975
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W

ci hf cd 100

Contextual Info: Central CMPTA44 Sem iconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistors designed for extremely high voltage applications. Marking Code is C3Z.