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BTC4505N3 Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BTC4505N3		Comchip Technology	High Voltage Transistor (NPN)	Original	PDF	63.96KB	3
BTC4505N3		CYStech Electronics	High Voltage NPN Epitaxial Planar Transistor	Original	PDF	155.23KB	4

BTC4505N3 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
sot-23 MARKING CODE 3d Abstract: BTA1759N3 BTC4505N3 MARKING 3D SOT-23 Contextual Info: Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505N3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.	Original	c210n3 btc4505n3 10ma/1ma bta1759n3 +4ot-23 ul94v-0 sot-23 marking code 3d marking 3d sot-23	PDF
transistor P 0225 Abstract: BTC4505N3 sot23 reb Transistor npn REB SOT23 Contextual Info: High Voltage Transistor NPN COMCHIP www.comchiptech.com BTC4505N3 Features High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA C COLLECTOR 3 SOT-23 1 BASE .119 (3.0) .110 (2.8) 2 .020 (0.5) Top View .020 (0.5)	Original	btc4505n3 10ma/1ma ot-23 mds0405003a +510mhz transistor p 0225 sot23 reb transistor npn reb sot23	PDF
4z sot23 marking code Abstract: marking 4z sot-23 BTA1759N3 BTC4505N3 pnp transistor 300v sot23 Contextual Info: CYStech Electronics Corp. Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.	Original	c309n3 bta1759n3 -400v -20ma/-2ma +6btc4505n3 ot-23 ul94v-0 4z sot23 marking code marking 4z sot-23 pnp transistor 300v sot23	PDF

Catalog Datasheet

Type

Document Tags

PDF

sot-23 MARKING CODE 3d

Abstract: BTA1759N3 BTC4505N3 MARKING 3D SOT-23
Contextual Info: Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505N3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.

Original

c210n3 btc4505n3 10ma/1ma bta1759n3 +4

PDF

transistor P 0225

Abstract: BTC4505N3 sot23 reb Transistor npn REB SOT23
Contextual Info: High Voltage Transistor NPN COMCHIP www.comchiptech.com BTC4505N3 Features High breakdown voltage. (BVceo =400V) Low saturation voltage, typically Vce(sat) =0.1V at Ic/Ib=10mA/1mA C COLLECTOR 3 SOT-23 1 BASE .119 (3.0) .110 (2.8) 2 .020 (0.5) Top View .020 (0.5)

Original

btc4505n3 10ma/1ma ot-23 mds0405003a +5

PDF

4z sot23 marking code

Abstract: marking 4z sot-23 BTA1759N3 BTC4505N3 pnp transistor 300v sot23
Contextual Info: CYStech Electronics Corp. Spec. No. : C309N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTA1759N3 Description • High breakdown voltage. BVCEO=-400V • Low saturation voltage, typical VCE(sat) =-0.2V at Ic/IB =-20mA/-2mA.

Original

c309n3 bta1759n3 -400v -20ma/-2ma +6

PDF