3D MARKING SOT23 Search Results

BC856

Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E

sot-23 Marking 3D

Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
Contextual Info: PNP General Purpose Transistor: BC856/857/858 Features: t
Low current max.100mA t
Low voltage (max.65v) Applications: t
SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L

Contextual Info: CMPTH81 SURFACE MOUNT PNP SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH81 type is a PNP Silicon RF Transistor, epoxy molded in a surface mount package, designed for general RF amplifier applications.

Contextual Info: BZX84C Series Zener diode Features 1. High reliability 2. Wide voltage range available 3. Low reverse current level 4. Small outline package for space savings 5. Surface mount package Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter

MMBT3960

Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2

smd transistor 3d

Abstract: 3F smd transistor 3D smd marking smd transistor marking 3d smd transistor 3g smd transistor 3F smd transistor BC857 BC857 smd transistor smd 3E SMD TRANSISTOR MARKING 3B
Contextual Info: Transistors IC SMD Type PNP General Purpose Transistor BC856,BC857,BC858 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low voltage max. 65 V . 1 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

Contextual Info: Transistors IC SMD Type Product specification BC856,BC857,BC858 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low voltage max. 65 V . 1 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1

marking JY sot-23

Abstract: sot-23 Marking 3D BAT34 LV4, SMD SOT-346 sot-23 Marking B1 SR715F SMD23 bat54 sot-323 B4 SOD-123
Contextual Info: E L E C T R O N I C Device Marking of Surface Mount Schottky July 2007 /Rev. 1 Part Number Package Marking Part Number Package Marking SR520G-30 SOD-723 2 SR651H-40 SOD-323 JT SR521G-30 SOD-723 3 BAT54T SOT-416 TS SR751G-40 SOD-723 5 BAT54TA SOT-416 TT SR501G-40

MARKING 3D

Abstract: MMBTA44
Contextual Info: @vic MMBTA44 SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L MMBTA44 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR 1.02 FEATURES Parameter Symbol 2.80±0.05 0.35 unless Test otherwise 2.92±0.05 1.60±0.05 1.9 0.95±0.025 Power dissipation PCM :

MMBTA44 3d

Abstract: transistor k 975
Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High l Through Hole Package l 150oC Junction Temperature Voltage Transistor l Power dissipation : 0.35 W

SILICONIX MARKING

Abstract: si9183dt 3D 6 kv ceramic capacitor SOT23 marking BP 5-PIN LDO MARKING 3D 3d sot23 sot-23 marking jn LDO marking code AL sot23-5 marking ha
Contextual Info: _ Si9183 Vishay Siliconix New Product High-Performance, Size Saving 150-mA CMOS LDO Regulator FEA TU R ES • • • • • • • • • Low 135-mV Dropout at 150-mA Load Guaranteed 150-mA Output Current 300-mA Peak Output Current Capability

sot-23 MARKING CODE 3d

Abstract: BTA1759N3 BTC4505N3 MARKING 3D SOT-23
Contextual Info: Spec. No. : C210N3 Issued Date : 2003.05.09 Revised Date : 2004.04.02 Page No. : 1/4 CYStech Electronics Corp. High Voltage NPN Epitaxial Planar Transistor BTC4505N3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.

KST5088

Abstract: KST5089 MARK 5D SOT
Contextual Info: KST5088/5089 KST5088/5089 Low Noise Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : KST5088 : KST5089 35 30 V V : KST5088

sot-23 MARKING CODE 3d

Abstract: 3D marking sot23 BTNA44N3 BTPA94N3 sot-23 Marking 3D
Contextual Info: CYStech Electronics Corp. Spec. No. : C210N3-H Issued Date : 2003.06.12 Revised Date : Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTNA44N3 Features • High breakdown voltage. BVCEO =400V • Low saturation voltage, typically VCE(sat) = 0.1V at IC/IB =10mA/1mA.

Contextual Info: SN65LVDT14-EP, SN65LVDT41-EP www.ti.com SCES633 – JUNE 2005 Memory Stick INTERCONNECT EXTENDER CHIPSET WITH LVDS SN65LVDT14 – ONE DRIVER PLUS FOUR RECEIVERS SN65LVDT41 – FOUR DRIVERS PLUS ONE RECEIVER FEATURES APPLICATIONS • • • • • •

Contextual Info: MCC TM Micro Commercial Components MMBTA44
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features NPN Silicon High Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

56ua

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA44 Features NPN Silicon High Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information

sot 23 3d

Abstract: SOT-23 3D sot-23 Marking 3D MMBTA44 MMBTA45
Contextual Info: UTC MMBTA44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V MMBTA44 VCEO=350V(MMBTA45) *Collector current up to 300mA *Complement to MMBTA94/93 *Collector Dissipation: Pc(max)=350mW 2 1 3 APPLICATION

IRF5820

Abstract: SI3443DV IRF5800 IRF5850
Contextual Info: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier

IRF5820

Abstract: IRF5806 IRF5800 SI3443DV 3D marking sot23 sot-23 Marking 3D
Contextual Info: PD - 93997A IRF5806 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max ID -20V 86mΩ@VGS = -4.5V 147mΩ@VGS = -2.5V -4.0A Description These P-channel MOSFETs from International Rectifier

w1p npn

Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
Contextual Info: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor­ mance and selection in the wideband arena. The devices are

PBSS4230T

Abstract: PBSS5230T Marking 3D TO-236AB
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat BISS transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 30 V, 2 A NPN low VCEsat (BISS) transistor PBSS4230T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D088 PBSS4230T 30 V, 2 A NPN low VCEsat BISS transistor Product data sheet 2003 Sep 29 NXP Semiconductors Product data sheet 30 V, 2 A NPN low VCEsat (BISS) transistor PBSS4230T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06