3A 100V NPN LOW SATURATION VOLTAGE Search Results

U2TA508

Abstract: 1A 100V DIODE R-1 U2TA510
Contextual Info: POWER DARLINGTONS U2TA506 U2TA508 U2TA510 3 Amp, 100V, Planar NPN, Plastic FEATURES DESCRIPTION • High Current Gain: 500 min. @ lc = 3A • Low Saturation Voltage: as low as 15V max. @ lc = 3A • Economic Plastic Molded Construction Unitrode NPN Dariingtons consist of a

ZXTN25100DG

Abstract: ZXTN25 TS16949 ZXTN25100DGTA ZXTP19100CG
Contextual Info: ZXTN25100DG 100V NPN high gain transistor in SOT223 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 3A VCE(sat) < 100mV @ 1A RCE(sat) = 85m⍀ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

Contextual Info: DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > 100V  Case: SOT363  IC = 1A high Continuous Collector Current   ICM = 3A Peak Pulse Current Case Material: Molded Plastic, “Green” Molding Compound.

U2TA510

Abstract: Unitrode Semiconductor U2TA506
Contextual Info: MICROSEMI CORP/ ÜIATERTOÜIN SDE D c13M7cï b 3 0D1E507 POWER DARLINGTONS- IUNIT U2TA506 U2TA508 U2TA510 3 Amp, 100V, Planar NPN, Plastic FEATURES • High Current Gain: 500 min. @ lc = 3A • Low Saturation Voltage: as low as 1.5V max. @ lc = 3A • Economic Plastic Molded Construction

D1724

Abstract: 2SB1167 2S017
Contextual Info: Ordering number: EN2047A 2SB1167/2SD1724 PNP/NPN Epitaxial Planar Silicon Transistors 100V/3A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage . High fT . Excellent linearity of hi

2SB1167

Contextual Info: Ordering number:2047A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1167/2SD1724 100V/3A Switching Applications Features Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2043A Features [2SB1167/2SD1724] · Low collector-to-emitter saturation voltage.

Contextual Info: O rdering num ber: EN2047A 2SB1167/2SD1724 NO.2047A PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/3A Switching Applications Applications . Relay drivers, high-speed inverters, converters Features . Low collector-to-emitter saturation voltage . High f\j.

Contextual Info: A Product Line of Diodes Incorporated Green FZT653 100V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •              BVCEO > 100V IC = 3A High Continuous Current ICM = 6A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A

DARLINGTON 3A 100V npn

Abstract: 2SD560 darlington power transistor ic 3A hfe 500 Darlington NPN Silicon Diode DARLINGTON 30A 100V npn 2SD560 transistor NPN Transistor 5V DARLINGTON HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON power darlington npn transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601

2SC2908

Abstract: 3A 100V npn LOW SATURATION VOLTAGE
Contextual Info: SavantIC Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Low collector saturation voltage APPLICATIONS ·For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION 1

NPN Transistor 8A

Abstract: DARLINGTON 3A 50V npn TIP102 Darlington transistor DARLINGTON 3A 100V npn npn transistor 100v min high current darlington transistor power darlington npn transistor Silicon NPN Darlington transistor TIP102 TIP107
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE = 1000 Min @ IC= 3A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A

2SC2908

Abstract: 3A 100V npn LOW SATURATION VOLTAGE
Contextual Info: Inchange Semiconductor Product Specification 2SC2908 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PN package ・Low collector saturation voltage APPLICATIONS ・For use in power amplifier and switching circuits applications PINNING PIN DESCRIPTION

2sc2516

Contextual Info: SavantIC Semiconductor Product Specification 2SC2516 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers

2SC2517

Contextual Info: SavantIC Semiconductor Product Specification 2SC2517 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Switching regulators ·DC-DC converters ·High frequency power amplifiers

3A 100V npn LOW SATURATION VOLTAGE

Abstract: 2SC2517
Contextual Info: Inchange Semiconductor Product Specification 2SC2517 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・Switching regulators ・DC-DC converters ・High frequency power amplifiers

2sc2516

Abstract: 3A 100V npn LOW SATURATION VOLTAGE
Contextual Info: Inchange Semiconductor Product Specification 2SC2516 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Low collector saturation voltage ・Wide area of safe operation APPLICATIONS ・Switching regulators ・DC-DC converters ・High frequency power amplifiers

TS 4142

Abstract: LC04A KSD73 100V transistor npn 5a KSD288 ksa814 NPN Transistor TO220 VCEO 80V 100V SAA 1020 NPN/TS 4142
Contextual Info: SAMSUNG SEMICONDUCTOR 14E INC KSC5030 D I 00075*14 2 NPN SILICON TRANSISTOR T-33- HIGH VOLTAGE AND HIGH RELIABILITY HIQH SPEED SWITCHING WIDE SOA ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Symbol Collector-Base Voltage Coilector-Emitter Voltage Emitter-Base Voltage

je180

Abstract: MJE181 MJE170 MJE172 MJE180 MJE182 MJE200 MJE210
Contextual Info: SAMSUNG SEMICONDUCTOR INC MJE172 D | 7^4145 0007^3 4 | PNP EPITAXIAL SILICON TRANSISTOR T -3 3-1 7 LOW FREQUENCY AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATION ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage j CoHector-Emitter Voltage

2SD2241

Abstract: 2SB1481 rl10c
Contextual Info: SavantIC Semiconductor Product Specification 2SD2241 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain : hFE=2000 Min ·Low saturation voltage ·Complement to type 2SB1481 ·DARLINGTON APPLICATIONS ·With switching applications

2SC3170

Contextual Info: SavantIC Semiconductor Product Specification 2SC3170 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·High breakdown voltge APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1

2SC3170

Contextual Info: JMnic Product Specification 2SC3170 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・High breakdown voltge APPLICATIONS ・For high speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector

2SC2739

Contextual Info: SavantIC Semiconductor Product Specification 2SC2739 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION 1

2SC2739

Abstract: 2a 100v NPN ic 3A hfe 500
Contextual Info: Inchange Semiconductor Product Specification 2SC2739 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High speed switching ·High VCBO ·Low saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN DESCRIPTION

2SC4596

Abstract: 2SC4596 equivalent
Contextual Info: SavantIC Semiconductor Product Specification 2SC4596 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For high speed power switching and DC-DC converter applications