3DD13007 Search Results

3DD13007

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR NPN TO-220 FEATURES power switching applications 1.BASE 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 123 3.EMITTER Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSIS TOR NPN TO-220 FEATURES power switching applications 1.BASE 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 3.EMITTER Symbol Parameter

3DD13007

Contextual Info: 3DD13007 3DD13007 TRANSISTOR NPN TO-220 FEATURES Power dissipation PCM: 2 W (Tamb=25℃) 1. BASE Collector current ICM: 8 A Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 123 TJ, Tstg: -55℃ to +150℃

3DD13007

Abstract: A840
Contextual Info: 3DD13007 3DD13007 TRANSISTOR NPN TO-220 FEATURES Power dissipation PCM: 2 W (Tamb=25℃) 1. BASE Collector current ICM: 8 A Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. EMITTER 123 TJ, Tstg: -55℃ to +150℃

smd transistor 2a

Abstract: 5a SMD Transistor
Contextual Info: Transistor IC Transistors Transistor DIP SMDType Type SMD Type Product specification 3DD13007 • Features TO-263 Unit: mm +0.1 1.27-0.1 ● High Speed Switching +0.2 4.57-0.2 +0.2 5.28-0.2 2 3 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 2.54-0.2 0.1max +0.1 1.27-0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007N36 TRANSISTOR NPN TO-220 FEATURES z Power switching applications 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 123 3. EMITTER Symbol

3DD13007

Contextual Info: 华晶分立器件 3DD13007 低频放大管壳额定双极型晶体管 1 概述与特点 3DD13007 硅 NPN 型功率开关晶体管 主要用于电子节能灯 电子镇流器及计算机电源的功 率开关电路 其特点如下 击穿电压高 漏电流小

3DD13007

Contextual Info: Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 3DD13007 TRANSISTOR NPN TO-220 FEATURES Power dissipation 2 PCM: W (Tamb=25℃) 1. BASE Collector current 8 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: 3DD13007 NPN TO-220 Transistor TO-220 1.BASE 2.COLLECTOR 3.EMITTER 1 2 3 Features — power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage

transistor d 1710

Abstract: 3DD13007
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 2 W（Tamb=25℃） Collector current ICM: 8 A Collector-base voltage V BR CBO : 700 V Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR NPN TO-220 FEATURES power switching applications 1.BASE 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3.EMITTER Symbol Parameter

Contextual Info: Transistors SMD Type NPN Silicon Power Transistor 3DD13007 • Features TO-263 Unit: mm +0.1 1.27-0.1 ● High Speed Switching +0.2 4.57-0.2 +0.2 5.28-0.2 2 3 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 2.54-0.2 0.1max +0.1 1.27-0.1 1 +0.2 15.25-0.2 5.60 +0.1 1.27-0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR NPN TO-220 FEATURES Power dissipation 2 PCM: W (Tamb=25℃) 1. BASE Collector current 8 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range

Contextual Info: TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR NPN TO-220 FEATURES Power dissipation 2 PCM: W (Tamb=25℃) 1. BASE Collector current 8 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123