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    3900A Search Results

    3900A Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    10143473-900A000LF
    Amphenol Communications Solutions PwrMAX® Power Connector, Right Angle, Plug STB 9HP with guide PDF
    SF Impression Pixel

    3900A Price and Stock

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    Sensata Circuit Breakers IELK1-1-63-9.00-AK-01-V

    Cir Brkr Hyd Mag
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    Master Electronics IELK1-1-63-9.00-AK-01-V
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    Sensata Circuit Breakers IULHK111-1-63-90.0-A-01

    Cir Brkr Hyd Mag
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    Master Electronics IULHK111-1-63-90.0-A-01
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    Sager IULHK111-1-63-90.0-A-01 1
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    Samtec Inc IDMD-32-T-39.00-A-G

    .100 Slim Body Double Row IDC Ribbon Cable Assembly Terminal
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    Master Electronics IDMD-32-T-39.00-A-G
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    Sager IDMD-32-T-39.00-A-G
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    Kyocera AVX Components BP0BA3900A700

    MLO FINISHED FILTER - Waffle Pack (Alt: BP0BA3900A700)
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    Mouser Electronics BP0BA3900A700 28
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    TTI BP0BA3900A700 WAFL 28
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    Kyocera AVX Components BP0BA3900A7TR

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    3900A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GES5307

    Abstract: 2N3901 2n3901 equivalent 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N5232A
    Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE b v CEO Type 2N 3391A NPN 25 2 N 3844 NPN 30 2N 3844A NPN 30 35-70 2N 3845 NPN 30 60 -1 2 0 2N 3845A NPN 30 60-120 2N 3900A NPN 18 2 5 0-&00 2N3901 NPN 18 2N 5232A NPN 2N 5249A 2N 5306A V NF hFE Device Min.-Max. @ l c > ^ C E <V)


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    2n3391a2n38442n3844a2n3845+92n3845a2n3900a25g-b00100ma2n3901ges5305ges53072n3901 equivalent2n5232a PDF

    ADF4106

    Contextual Info: Frequency Synthesizer 50Ω KSN-3900A+ 3800 to 3900 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-3900A+ is a Frequency Synthesizer, designed to operate from 3800 to 3900 MHz


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    ksn-3900adk1042adf4106 PDF

    Contextual Info: KSN-3900A+ Frequency Synthesizer Typical Performance Data FREQ. POWER OUTPUT HARMONICS VCO CURRENT PLL CURENT dBm (dBc) (mA) (mA) (MHz) 3800.0 3805.0 3815.0 3825.0 3835.0 3845.0 3855.0 3865.0 3875.0 3885.0 3900.0 -45ºC +25ºC +85ºC -45ºC F2 +25ºC 0.57


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    ksn-3900a3900mhz PDF

    wt 8871

    Abstract: 3826 3900-365 transistor equivalent book FOR K2843
    Contextual Info: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3900A+ 3650 to 3900 MHz Features • Linear tuning characteristics • Low pushing • Low pulling • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications Connectors Model Price Qty. SMA


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    zx95-3900agb956zx95-3900a-s2002/95/ec+4wt 887138263900-365transistor equivalent book for k2843 PDF

    37746

    Abstract: 39587 38931
    Contextual Info: Voltage Controlled Oscillator Typical Performance Data ZX95-3900A+ V TUNE FREQUENCY POWER OUTPUT TUNE SENS MHz/V (MHz) (dBm) 0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00


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    zx95-3900a377463958738931 PDF

    Contextual Info: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3900A+ 3650 to 3900 MHz Features • Linear Tuning characteristics • Low Pushing • Low Pulling • Protected by US patent 6,790,049 CASE STYLE: GB956 Applications Connectors Model Price Qty. SMA


    Original
    zx95-3900agb956zx95-3900a-s2002/95/ec+210khz100khz PDF

    Dow Corning 735

    Abstract: dow corning silicone compound alcoa electrical joint compound 2600 corning SF1154 dissipator Silicones dow corning 732 A801CA A801CB
    Contextual Info: A801 77mm RECTIFIER DIODE 3200V / 3900A SPCO The rectifier diode feature a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.


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    ls2037sf1154dc550g322l+9dow corning 735dow corning silicone compoundalcoa electrical joint compound2600 corningdissipatorsiliconesdow corning 732a801caa801cb PDF

    SF1154

    Abstract: SF-1154 G322L G623 alcoa electrical joint compound 3m scotch-brite DC550 6rt2 ALCOA LS2037
    Contextual Info: A801 77mm RECTIFIER DIODE 3200V / 3900A The rectifier diode feature a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.


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    ls2037sf1154dc550g322l+6sf-1154g623alcoa electrical joint compound3m scotch-brite6rt2alcoa PDF

    3860

    Contextual Info: KSN-3900A+ Frequency Synthesizer Typical Performance Data Power Output Vs Frequency 4.0 -45°C 3.5 +25°C Power Output dBm 3.0 +85°C 2.5 2.0 1.5 1.0 0.5 0.0 -0.5 -1.0 3800 3810 3820 3830 3840 3850 3860 3870 3880 3890 3900 Frequency (MHz) 2nd Harmonics Vs Frequency


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    ksn-3900a3900mhz3860 PDF

    Contextual Info: Frequency Synthesizer 50Ω KSN-3900A+ 3800 to 3900 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-3900A+ is a Frequency Synthesizer, designed to operate from 3800 to 3900 MHz


    Original
    ksn-3900adk1042 PDF

    wt 8871

    Contextual Info: Coaxial Voltage Controlled Oscillator Linear Tuning ZX95-3900A+ 3650 to 3900 MHz Features • linear tuning characteristics • low pushing • low pulling • protected by US patent 6,790,049 CASE STYLE: GB956 Applications Connectors Model Price Qty. SMA


    Original
    zx95-3900agb956zx95-3900a-s2002/95/ec+1wt 8871 PDF

    Contextual Info: Frequency Synthesizer 50Ω KSN-3900A+ 3800 to 3900 MHz The Big Deal • Low phase noise and spurious • Robust design and construction • Small size 0.80" x 0.58" x 0.15" CASE STYLE: DK1042 Product Overview The KSN-3900A+ is a Frequency Synthesizer, designed to operate from 3800 to 3900 MHz


    Original
    ksn-3900adk1042esn-2150p-12 PDF

    Contextual Info: Voltage Controlled Oscillator Typical Performance Data ZX95-3900A+ Frequency and Tuning Sensitivity Power Output 4500 FREQ. @ -55°C FREQ. @ +25°C 46 5.2 44 5.0 Output Power dBm Frequency (MHz) T.SENS @ +25°C 4200 42 4100 40 4000 38 3900 36 3800 34 3700


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    zx95-3900a PDF

    A9 npn

    Abstract: GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 10 10 2 •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200


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    2n39032n39042n39052n3906+72n41232n41242n41252n41262n4400a9 npnges93 PDF

    2N2926

    Abstract: 2N3859A 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N3390
    Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type b v CEO @ 10m A V hFE V M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN NPN NPN


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    2n27112n27122n27132n2714+72n29232n29242n29252n29262n33902n33912n3859a PDF

    A190A

    Contextual Info: C O N V ER T ER G R A D E T H Y R IS T O R Voltage Ratings 500 I J CR 140 U and F Series I t A V 8 5 ° C = 1 5 0 A I 1000 L_ J 1500 L_ J _ L I u 2000 UNIT I— I V rsm V l2t = 7 6 ,0 0 0 A 2s e c V dsm V RATIN GS AND C H A R A C T ER IS T IC S V rrm


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    a190a PDF

    R1279

    Contextual Info: Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R1279NC22x to R1279NC25x Absolute Maximum Ratings MAXIMUM LIMITS UNITS Repetitive peak off-state voltage, note 1 2200-2500 V VDSM Non-repetitive peak off-state voltage, (note 1) 2200-2500


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    r1279nc22xr1279nc25xr1279 PDF

    650Ah

    Contextual Info: Powered by MSJ 650 2V 650Ah MSJ 650 is a long service life battery up to 20 years expected life under normal float charge. As wit hall CSB batteries , all are rechargeable, highly efficient , leak proof and maintenance free. Specification Cells Per Unit Voltage Per Unit


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    650ah10hr-rate02/cell PDF

    4HR hall

    Contextual Info: Powered by MSV 650 2V 650Ah MSV 650 is a long service life battery up to 15 years expected life under normal float charge. As wit hall CSB batteries , all are rechargeable, highly efficient , leak proof and maintenance free. Specification Cells Per Unit Voltage Per Unit


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    650ah10hr-rate02/cell4hr hall PDF

    R1331NC10X-12X

    Abstract: thyristor 1012 r1331 CS thyristor cs 5-10
    Contextual Info: Date:- 01 August 2012 Data Sheet Issue:- 2 Distributed Gate Thyristor Type R1331NC10x to R1331NC12x Absolute Maximum Ratings MAXIMUM LIMITS UNITS Repetitive peak off-state voltage, note 1 1000-1200 V VDSM Non-repetitive peak off-state voltage, (note 1) 1000-1200


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    r1331nc10xr1331nc12xr1331nc10x-12xthyristor 1012+2r1331cs thyristor cs 5-10 PDF

    PLC siemens S7-300 cpu 313C manual

    Abstract: PLC siemens S7-300 cpu 315-2 DP manual 6ES7 315-2AG10-0AB0 6ES7 331-7KF02-0AB0 6ES7 321-1BL00-0AA0 PLC siemens S7-300 cpu 315-2 PN/DP 313-5BE01-0AB0 PLC siemens S7-300 cpu 315-2 DP 6ES7 331-7KB02-0AB0 6ES7 361-3CA01-0AA0
    Contextual Info: SIMATIC S7-300 Central processing units CPU 312C to CPU 317F-2 DP • CPU 317F-2 DP • The failsafe CPU with a large program memory and quantity framework for demanding applications • For configuration of a failsaf e automation system for plants with increased safety requirements


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    s7-300317f-2et200set200m+10plc siemens s7-300 cpu 313c manualplc siemens s7-300 cpu 315-2 dp manual6es7 315-2ag10-0ab06es7 331-7kf02-0ab06es7 321-1bl00-0aa0plc siemens s7-300 cpu 315-2 pn/dp313-5be01-0ab0plc siemens s7-300 cpu 315-2 dp6es7 331-7kb02-0ab06es7 361-3ca01-0aa0 PDF

    BF195 equivalent

    Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
    Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products


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    bf195 equivalentbf1972n3680bf173+6transistor bf 175bc413bfy39bf256transistor bf194ke4416 PDF

    7408, 7404, 7486, 7432 use NAND gate

    Abstract: JLCC-68 ci 74386 cI 74150 jLCC68 74153 full adder 7402, 7404, 7408, 7432, 7400 74106 sln 7404 LCC-64
    Contextual Info: MB65XXXX MB66XXXX MB67XXXX AV CMOS SERIES GATE ARRAYS F U JIT S U June 1986 Edition 2.0 DESCRIPTION The Fujitsu MB65xxxx/M B66xxxx/M B67xxxx family are a series o f high perform ance CMOS gate arrays designed to provide high density, low pow er, and operating speeds th a t are com parable to standard bipolar logic. The A V M 865xxxx series is an ideal


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    mb65xxxxmb66xxxxmb67xxxxmb65xxxx/mb66xxxx/mb67xxxx+14m865xxxx350avb540avb850avb7408, 7404, 7486, 7432 use nand gatejlcc-68ci 74386ci 74150jlcc6874153 full adder7402, 7404, 7408, 7432, 740074106sln 7404lcc-64 PDF

    741n

    Abstract: 3900BE 741J bm 308 an 3900AE
    Contextual Info: ANALOGUE INTEGRATED REGULATORS, S SWITCH-MODE TDA POWER 4SQ1D OR. CIRCUITS & AMR s SUPPLY COMRARATORS l i ^ L U i S.A. n CONTROLLER Features : 0 . 7.8 11 110 4 . Operating temperature : Supply voltage : Switch voltage V9 : Supply current : Voltage reference VI :


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    o-116741n3900be741j+2bm 308 an3900ae PDF