36C32 Search Results

36C32-55

Abstract: Seeq 36C16 24128 36c3240
Contextual Info: 36C16 36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEQ's36C16/32 are high speed 2 K x8 /4 K x8 Electrically Erasable Programmable Read Only Memories, manufac­ tured using SEEO's advanced 1.25 micron CMOS proc­ ess.

36C32

Contextual Info: 36C16 36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEO's 36C16/32 are high speed 2K x8/4K x 8 Electrically Erasable Programmable Read Only Memories, manufac­ tured using SEEO's advanced 1.25 micron CMOS proc­ ess.

Contextual Info: SEEtì T E C H N O L O G Y 4SE D INC • 011=1233 0 0 0 3 1 7 S 3 ■ SEE 36C32 High Speed CMOS Electrically Erasable PROM August 1991 Features Description ■ Military Extended and Commercial Temperature Range • -55 °C to +125°C Operation Military • -40°C to +85°C Operation (Extended)

E38C32

Contextual Info: E/M38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ ■ ■ ■ Military and Extended Temperature Range High Speed Address/Data Latching 50 ms Chip Erase 5V ±10% Power Supply Power Up/Down Protection Circuitry

2816A

Contextual Info: 38C16 38C32 High Speed CMOS Electrically Erasable PROM October 1989 Features • H igh Speed: • 35 n s M axim um A ccess Time P ow er Up/Down Protection Circuitry ■ C M OS Technology ■ Low P ower: • 350 m W JE D E C A pp ro ved B yte W ide P inout

raytheon

Abstract: AM27S291ADC MB7138H-SK 27C291-50 SIGNETICS prom 63S1681N 57C29-1 57C291-55 63S1681ANS HARRIS PROM
Contextual Info: SEEQ TECHNOLOGY PROM REPLACEMENT CHART Alternate Manufacturer Part # Description SEEQ Part # AMD AM27PS291DC 2K X 8 PROM AMD AM27PS291DM 2K X 8 PROM 36C16-55 AMD AM27PS291ADM 2K X 8 PROM 36C16-55 36C16-35 36C16-45 AMD AM27S291ADC 2K X 8 PROM CYPRESS CY7C291-35

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 C!"3 A2 EC!"38 11   *2  

Contextual Info: E/M36C16 36C32 High Speed CMOS Electrically Erasable PROM October 1989 Features Description • SEEO's E/M36C16/32 are high speed 2K x 8/4K x 8 Elec­ trically Erasable Programmable Read Only Memories, manufactured using SEEQ's advanced 1.25 micron CMOS process.

co12f

Contextual Info: ITE D SEE 3 TECHN OLO GY INC • ñinS33 0Q02bûb 1 E/M36C16 E/36C32 High Speed CMOS Electrically Erasable PROM October 1989 ”T 4 4 - l V 2 - 7 Features Description ■ M ilitary and Extended Temperature Range • -55° C to +125aC Operation (Military

d774

Abstract: d778 b778 58C65 08CB 27HC642 58c256 df4a SIGNETICS 87C256 57C49B
Contextual Info: 40M I0I Device Support Rev 14.2 4 1M10 i Device Support (Rev 15.0) 42M I0I Device Support (Rev 14.1) (November 1994) Please note: Any device indicated by => is a new addition to the ydevice support list. S T A G PROORAMMCR3 Stag Programmers Limited Silver Court Watchmead Welwyn Garden City Herts AL7 ILT

Contextual Info: E/M36C16 36C32 High Speed CMOS Electrically Erasable PROM October 1989 Description Features • SEEO's E/M36C16/32 are high speed 2Kx 8/4Kx 8 Elec­ trically Erasable Programmable Read Only Memories, manufactured using SEEQ's advanced 1.25 micron CMOS process.

J990

Abstract: E38C32 36C32 eeprom 2816A seeq 2816A
Contextual Info: E/M38C16 E/M38C32 High Speed CMOS Electrically Erasable PROM PRELIMINARY DATA SHEET October 1989 Features • ■ Military and Extended Temperature flange • -5 5 ° C to +125°C Operation Military • - 4 0 ° C to +85°C Operation (Extended) CMOS Technology

2BC64

Abstract: 2816A 28C64 eeprom 2816A Seeq Technology 36C32 seeq 38c16 seeq prom 38C16
Contextual Info: High Speed CMOS Electrically Erasable PROM O ctober 1989 Features • High Speed: • 3 5 n s M axim um A ccess Time P ow er Up/Down P rotection C ircuitry ■ C M O S Technology ■ L o w P ower: • 350 m W JE D E C A pp ro ved B yte Wide P inout • 38C 1 6:2 816 A Pin Com patible

AD33b

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C !3 A2EC !38  5C4578C73D36 389C ! 57"59768!F3 9EC !3 &D2' 36A4F36 6*23428654F4 &+,-6.6/$& 0+61236.6$46)60+566.64 B817364835(3 # 97D11324835(3 # :FF314(4F2373