3680 MOSFET Search Results

3680 MOSFET

Abstract: TSM4425 p-channel mosfet TSM4425CS marking sop-8 P-Channel MOSFET code L 1A 27BSC
Contextual Info: TSM4425 30V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain -30 Features ID (A) 12 @ VGS = -10V -11 19 @ VGS = -4.5V -8.5 Block Diagram ● Advance Trench Process Technology

Tsm4425

Contextual Info: TSM4425 30V P-Channel MOSFET SOP-8 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain -30 Features ID (A) 12 @ VGS = -10V -11 19 @ VGS = -4.5V -8.5 Block Diagram  Advance Trench Process Technology

Contextual Info: SPICE Device Model SiR862DP Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR870ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

S1209

Abstract: SIR870 SiR870ADP
Contextual Info: SPICE Device Model SiR870ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR862DP www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing

AOTF20n60

Contextual Info: AOT20N60/AOTF20N60 600V,20A N-Channel MOSFET General Description Product Summary The AOT20N60 & AOTF20N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing

MIL-S-19500

Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Contextual Info: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S

SSF7508

Abstract: 3680 MOSFET 130a Gate Turn-off top switch to220 25Starting N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V
Contextual Info: SSF7508 Feathers: ID=130A „ Advanced trench process technology „ Special designed for Convertors and power controls „ High density cell design for ultra low Rdson „ Fully characterized Avalanche voltage and current „ Avalanche Energy 100% test BV=80V

si4654

Abstract: Si4654DY Si4654DY-T1-E3
Contextual Info: New Product Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 29 nC

Contextual Info: FDS7088N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI4654DY

Contextual Info: New Product Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested Qg (Typ.) 29 nC

S0901

Abstract: Si4654DY Si4654DY-T1-E3 Si4654DY-T1-GE3
Contextual Info: Si4654DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.004 at VGS = 10 V 28.6 0.0052 at VGS = 4.5 V 25.6 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: New Product SiR870DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 100 0.006 at VGS = 10 V 60 0.0064 at VGS = 7.5 V 60 0.0078 at VGS = 4.5 V 60 Qg (Typ.) 26.7 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

transistor g23 mosfet

Abstract: 3680 MOSFET transistor g23 CF-922 1SS140 marking code wa sot 143 CF922
Contextual Info: TELEFUNKEN ELECTRONIC fllC D ITilLitFQIKlKiMelectronic â^SQQ^b 000530b CF 922 Marked with: CF 4 Creative Technologies N-Channel-GaAs-MESFET-Tetrods Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz in common Gate 1 configuration;

Contextual Info: MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTMPower-MOSFET,40V BSZ025N04LS DataSheet Rev.2.1 Final PowerManagement&Multimarket OptiMOSTMPower-MOSFET,40V BSZ025N04LS 1Description TSDSON-8FL enlarged source interconnection

25N95K3

Abstract: STW25N95K3 Stw25n95
Contextual Info: STW25N95K3 N-channel 950 V, 0.32 Ω, 22 A, TO-247 SuperMESH3 Power MOSFET Features Type VDSS RDS on max STW25N95K3 950 V < 0.36 Ω Pw ID 22 A 400 W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized ■ Very low intrinsic capacitances

STW25N95K3

Abstract: 25N95K3 ENERGY SAVING UNIT Diagram transistor st make 803 B2 marking code Zener
Contextual Info: STW25N95K3 N-channel 950 V, 0.32 Ω, 22 A, TO-247 SuperMESH3 Power MOSFET Preliminary data Features Type VDSS RDS on max STW25N95K3 950 V < 0.36 Ω Pw ID 22 A 400 W • 100% avalanche tested ■ Extremely large avalanche performance ■ Gate charge minimized

Contextual Info: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: FCH110N65F N-Channel SuperFET II FRFET® MOSFET 650 V, 35 A, 110 m Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance