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    TE Connectivity CLWG-360-NC4

    - Bag (Alt: 04-1270-0020)
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    Avnet Americas CLWG-360-NC4 Bag 6 Weeks 1
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    360NC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HFA140MD60D

    Abstract: IRFP250
    Contextual Info: PD-40010 01/99 HFA140MD60D HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Anode 1 AC Cathode 2 Isolated Base VR = 600V VF typ. ‚ = 1.2V IF(AV) = 140A Qrr(typ.) = 360nC


    Original
    pd-40010hfa140md60d360ncirfp250 PDF

    52N50C3

    Abstract: s4615 SPW52N50C3
    Contextual Info: SPW52N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spw52n50c3p-to247q67040-s461552n50c3+1s4615 PDF

    Contextual Info: SPW52N50C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • Worldwide best RDS(on) in TO-247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spw52n50c3o-247pg-to24752n50c3+1009-134-a PDF

    HFA140MD60D

    Abstract: IRFP250
    Contextual Info: PD - HFA140MD60D HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG LUG LUG Anode AC Cathode TERMINAL TERMINAL TERMINAL 1 1 CATHODE ANODE 2 2 ANODE BASE ISOLATED


    Original
    hfa140md60d360ncirfp250 PDF

    52n50c3

    Abstract: SPW52N50C3
    Contextual Info: SPW52N50C3 CoolMOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-247 VDS @ Tjmax 560 V RDS(on) 0.07 Ω ID 52 A • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spw52n50c3o-247pg-to24752n50c3+1009-134-a PDF

    52N50C3

    Abstract: SPW52N50C3
    Contextual Info: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spw52n50c3pg-to247q67040-s461552n50c3 PDF

    52n50c3

    Abstract: SPW52N50
    Contextual Info: SPW52N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spw52n50c3p-to247q67040-s461552n50c3+1spw52n50 PDF

    s4615

    Abstract: 52N50C3 SPW52N50C3
    Contextual Info: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spw52n50c3pg-to247q67040-s461552n50c3+3009-134-ao-247s4615 PDF

    1100nC

    Abstract: HFA140MD60C IRFP250
    Contextual Info: PD - 40009 rev. A 01/99 HFA140MD60C HEXFRED TM Ultrafast, Soft Recovery Diode Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG LUG LUG TERMINAL TERMINAL TERMINAL ANODE 1 CATHODE ANODE 2 Isolated Base


    Original
    hfa140md60c360nc1100ncirfp250 PDF

    52n50c3

    Abstract: s4615 SPW52N50C3
    Contextual Info: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spw52n50c3p-to247q67040-s461552n50c3+1s4615 PDF

    Contextual Info: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spw52n50c3pg-to247q67040-s461552n50c3 PDF

    Contextual Info: SPW52N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.07 Ω ID 52 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated


    Original
    spw52n50c3pg-to247q67040-s461552n50c3 PDF

    HFA140MD60C

    Abstract: IRFP250
    Contextual Info: PD - 4.009 HFA140MD60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG LUG LUG TERMINAL TERMINAL TERMINAL ANODE 1 CATHODE ANODE 2 BASE ISOLATED VR = 600V


    Original
    hfa140md60c360ncirfp250 PDF