3600E Search Results

5SLA 3600E170300

Abstract: 5SYA2039 3600E170300
Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 HiPak Single DIODE Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-03 06-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-02 04-2012 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1414-06 02-2014 5SNA 3600E170300 HiPak IGBT Module VCE = 1700 V IC = 3600 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1414-06 02-2014 5SNA 3600E170300 HiPak IGBT Module VCE = 1700 V IC = 3600 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1414-06 02-2014 5SNA 3600E170300 HiPak IGBT Module VCE = 1700 V IC = 3600 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

4DSM

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-00 04-2011 5SLA 3600E170300 ABB HiPakTM, Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1416-01 11-2011 5SLA 3600E170300 ABB HiPakTM Single Diode Module VRRM = 1700 V IF = 3600 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1414-04 06-2012 5SNA 3600E170300 ABB HiPakTM IGBT Module VCE = 1700 V IC = 3600 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1414-03 04-2012 5SNA 3600E170300 ABB HiPakTM IGBT Module VCE = 1700 V IC = 3600 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

5SNA 3600E170300

Abstract: icm 7200 5SNA3600E170300
Contextual Info: Data Sheet, Doc. No. 5SYA 1414-04 06-2012 5SNA 3600E170300 HiPak IGBT Module VCE = 1700 V IC = 3600 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1414-01 04-2011 5SNA 3600E170300 ABB HiPakTM, IGBT Module VCE = 1700 V IC = 3600 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1414-02 11-2011 5SNA 3600E170300 ABB HiPakTM IGBT Module VCE = 1700 V IC = 3600 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Contextual Info: Data Sheet, Doc. No. 5SYA 1414-05 08-2013 5SNA 3600E170300 HiPak IGBT Module VCE = 1700 V IC = 3600 A Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance

Horizontal Transistor TT 2246

Abstract: ca3080 spice vogt transformer 406 69 CA3098 equivalent ICL8038 applications advantages disadvantages gi 9544 class d amplifier schematic hip4080 STR 6459 SEVEN PIN IC TRANSISTOR FOR POWER SUPPLY siemens transistor manual BUF601
Contextual Info: New High Speed Linear Products VIDEO OP AMPS AND BUFFERS HFA1105 LOW POWER VIDEO OP AMP HFA1115 I LOW POWER PROGRAMMABLE GAIN VIDEO BUFFER [ AnswerFAX DOCUMENT # 3395 AnswerFAX DOCUMENT * 3606 • -3dB Bandwidth Ay * + 2 . 350MHz

FLUKE 1520

Abstract: 1556096 3600-E
Contextual Info: Manual Supplement Manual Title: 1520 Calibration Part Number: 1592594 Print Date: November 2000 Revision/Date: Supplement Issue: Issue Date: Page Count: 2 10/01 1 This supplement contains information necessary to ensure the accuracy of the above manual. Enter the corrections in the manual if either one of the

about the IC ca3130

Abstract: ICAN-6668 opamp CA3130 ICAN-6080 CD4007 IC1 CA3130 RCA3086 pin diagram of IC ca3130 IC CA3130 application 7A1 zener diode
Contextual Info: D e i5 i f R ^ C IA S I 3] Harris o ^ CA3130A CA3130 BiMOS O perational Amplifiers with M O S F E T In p u t/C M O S Output August 1991 F e a tu re s D escription • MOJSFET In p u t S tag e Provides: CA3130A and C A 3130 are integrated-circuit operational

pin diagram of IC ca3130

Abstract: about the IC ca3130 CA3130T equivalent ca3130 cross reference IC CA3130 application block diagram of ca3130 CA3130 equivalent ic of ca3130 equivalent ic of ca 3130 CA3130 as a low pulse generator
Contextual Info: 33 CA3130, CA3130A 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output November 1996 Features Description • MOSFET Input Stage Provides: - Very High Zt = 1.5 T£1 1.5 x 1012il (Typ) - Very Low l| = 5pA (Typ) at 15V Operation = 2pA (Typ) at 5V Operation

TRIAC RCA ca3058

Abstract: rca ca3240E CA311G CA101AT CA124G sn76013 CA1310 CA555CG Fuji Electric tv schematic diagram 40468A
Contextual Info: RCA Linear Integrated Circuits This DATABOOK contains complete technical information on the full line of RCA standard commercial linear in­ tegrated circuits and MOS field-effect transistors for both industrial and con­ sumer applications. An Index to Devices provides a complete listing of

CA3600E

Abstract: RCA-CA3600E CA3600 RCA-CA3080 rca CA3080 TRANSISTOR N2 TA6368 CA3046 pnp array RCA ca3600 RCA COS/MOS Integrated Circuits Manual
Contextual Info: G E SOLID STATE D I D È I 3Ô7SDÛ1 0G14ti57 i | ^ ^ 3 ^ 3 :_ Arrays CA3600 CM O S Transistor Array For Linear Circuit Applications Features: • High in p u t resistance.1 0 0 G f i t y p .

IC 741 OPAMP

Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
Contextual Info: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte

Contextual Info: Features • Single 2.7V - 3.6V Supply • Serial Peripheral Interface SPI Compatible – Supports SPI Modes 0 and 3 • 70 MHz Maximum Clock Frequency • Flexible, Uniform Erase Architecture • • • • • • • • • • – 4-Kbyte Blocks – 32-Kbyte Blocks