36 W BALLAST Search Results

ST make transistor

Abstract: DSASW003740
Contextual Info: STEVAL-ILB001V2 36 W - 220 Vac low-cost HF ballast demonstration board using the bipolar solution for PFC Data brief Features • Power supply: 220 Vac ■ Power output: 36 W ■ Boost topology ■ Discontinuous-conduction mode ■ RoHS compliant Description

Contextual Info: STEVAL-ILB001V2 36 W - 220 Vac low-cost HF ballast demonstration board using the bipolar solution for PFC Data brief Features • Power supply: 220 Vac ■ Power output: 36 W ■ Boost topology ■ Discontinuous-conduction mode ■ RoHS compliant s ct

MAGNETICA

Abstract: smd diode t8 Schottky electronic ballast for tube light 36 ELECTRONIC BALLAST 4 T8 SCHEMATIC 1N414 diode L6585 1n4007 sod123 1N4007 SOD80C package t8 ballast circuits ELECTRONIC BALLAST 2 LAMP SCHEMATIC
Contextual Info: AN3032 Application note STEVAL-ILB007V1, 2 x 58 W/T8 ballast based on the L6585DE suitable for 2 x 36 W/T8 lamp Introduction This application note describes a demonstration board able to drive 2 x 58 W linear T8 fluorescent tubes. The last section of the document describes the changes that need to be

2.2 uf 50v electrolytic

Abstract: 1N4153 NEL2001 NEL200101-24
Contextual Info: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB PACKAGE OUTLINE 01 • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:

1N4153

Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic
Contextual Info: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:

Contextual Info: NCP5181BAL36WEVB NCP5181 36 W Ballast Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Description Detailed Operation This document describes how the NCP5181 driver can be implemented in a ballast application. The scope of this evaluation board user’s manual is to highlight the NCP5181

zener diode 1n4148

Abstract: GENERIC CAPACITOR 5V1 zener generic resistor vogt r1 power supply resistor 2W specification of mosfet irf VOGT r6 VOGT r7 10 mf capacitor 400v
Contextual Info: AND8244 A 36 W Ballast Application with the NCP5181 Prepared by: Thierry Sutto ON Semiconductor http://onsemi.com Detailed Operation This document describes how the NCP5181 driver can be implemented in a ballast application. The scope of this application note is to highly the NCP5181 driver and not to

Contextual Info: STEVAL-IHT001V1 Thermostat control demonstration board for refrigerators, based on the ST7Lite39 Data brief Features • Power supply: 220 Vac ■ Power output: 36 W ■ Boost topology ■ Discontinuous-conduction mode ■ RoHS compliant s ct u d o r P

TPV364

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line T P V 36 4 V H F Lin e ar P o w e r T ra n sisto r 10 W — 230 MHz VHF LINEAR POWER TRANSISTOR The TPV364 is a NPN g o ld m e ta llized tra n sisto r using d iffu se d ballast resistors fo r im p ro ve d lin e a rity. This tra n s is to r is designed fo r high p o w e r band ill TV transposers

choke vk200

Abstract: VK200 ferrite choke 2N5102 RCA-2N5102 VK200 INDUCTOR vk200 rf choke VK200 FERRITE inductor vk200 TA2791 vk200 choke
Contextual Info: File No. 279 DQQBÆ] RF P o w er Transisto rs Solid State Division 2N5102 High-Pow er Silicon N -P -N Overlay Transistor For Class C, AM Operation in V H F Circuits F e a tu re s : J E D E C T O -6 0 • 15 W output min. at 1 36 M H z ■ For 24 V aircraft communication

J04036

Contextual Info: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA J04036 The RF Line N P N S ilic o n V H F P o w e r T ra n sisto r 36 W — 175 M H z RF PO W E R T R A N S IS T O R N P N SIL IC O N . . . designed p rim a rily fo r 12.5 V olt w id e b a n d , large-signal a m p lifie r a p p lica tio n s in

2n2222 npn transistor

Contextual Info: Order th is data sheet by MRF862/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Line MRF862 NPN Silicon RF Power TVansistor M otorola Preferred Device CLASS A 800-960 MHz 36 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier

acrian RF POWER TRANSISTOR

Abstract: ACRIAN acrian inc acrian RF POWER TRANSISTOR cd4792-4 20VoH ZD01 acrian H100-50
Contextual Info: .0182998, A C R I A N A C R IA N 9 Z D - A 14 36— INC DE J O l ö S ' m IN C QD D 14 3L , a ü S IÜ Ü S M iilB S H i!! G EN ER A L 2307 D E S C R IP TIO N 7.0 WATTS - 20 VOLTS 2300 MHfc The 2307 is a common base transistor capable of providing 7 watts of C W RF output power at 2300 MHz.

EN50294

Abstract: t8 ballast circuits ELECTRONIC BALLAST SK Electronic ballast 2x36 2x36w 1X55 220-240V ballast 2x36w tridonic t8 36w electronic ballast
Contextual Info: TC-L, T8 Electronic ballasts Linear lamps and compact lamps PC TCL PRO 36–55 W 220–240 V 50/60/0 Hz, single lamp and twin lamp RoHS 28 40 4,1 40 L D • defined lamp warm start < 1.5 s • constant light output independent of fluctuations in mains voltage

transistor f 255

Abstract: TRANSISTOR A 225 PH2226-50M VCC36
Contextual Info: Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-50M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

Contextual Info: Radar Pulsed Power Transistor, 75W, 300ns Pulse, 10% Duty 2.7 - 3.1 GHz PH2731-75L V 2 .0 0 Features COÜ N I’ N Silicon Microwave Power Transistor C om m on Hase Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

wacom

Abstract: FI55 PH3134-55L lcfb RF NPN POWER TRANSISTOR 2.5 GHZ 340 a transistor
Contextual Info: an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty 3.1 - 3.4 GHz PH3134-55L Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Effkiency Interdigitated Geometty Diffused Emitter Ballasting Resistors

13MM

Abstract: PH3134-2OL transistor f20 PH3134
Contextual Info: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors

AN3009

Abstract: L6564-TM L4981B L6564 SSOP10 Package L4981A SSOP-10 STF7NM50N l6564t DIODE 8721
Contextual Info: AN3009 Application note How to design a transition mode PFC pre-regulator using the L6564 Introduction The transition mode TM technique is widely used for power factor correction in low and medium power applications, such as lamp ballasts, high-end adapters, flatscreen TVs,

2N3632

Abstract: LA 4127 LA 4440 IC transistor d 5702 e d 5703 2N5102 Effio ic 4440 2N4431 136 2n 2N3927
Contextual Info: 2N3632 SILICO N NPN VHF POWER TRANSISTO R Distributed Wafer Interdigitai Construction Integrated Diffused Emitter Ballast mechanical data Pins 1,15 " 10/32-NF-2AThread All dimensions are in mm TO-60 * absolute maximum ratings Tease - 25 °C Collector-Base V o lt a g e .

2N3375

Abstract: Transistor 2n3375 2n5708 transistor 3866 s 2N3927 2n4440 texas rf power transistor 2n RF transistor TO128 PACKAGE 2N5690
Contextual Info: 2N3375 SILICON NPN VHF POWER TRANSISTOR Distributed Wafer Interdigital Construction Integrated Diffused Em itter Ballast mechanical data All d im e n s io n s a re in m m TO-60 * absolute maximum ratings at 25 ° C case temperature unless otherwise noted

MSC1626

Abstract: sd1012 SD1012-03 max3618
Contextual Info: SD1012-03 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The SD1012-03 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications in the 36 – 175 MHz frequency range. Emitter ballasting is employed to achieve

AN3009

Abstract: STMicro AN3022 L6564 STF7NM50N smps 100w half bridge L4981B PFC smps design L4981A SSOP-10
Contextual Info: AN3009 Application note How to design a transition mode PFC pre-regulator using the L6564 Introduction The transition mode TM technique is widely used for power factor correction in low and medium power applications, such as lamp ballasts, high-end adapters, flatscreen TVs,

transistor p8

Abstract: f2224 52Z05
Contextual Info: =_ rz an AMP comcww Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2226-11 OM 2.25 - 2.55 GHz v2.00 so3 Features l l l l l l l _ NPN Silicon Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors