358 TRANSISTOR Search Results

2SD2576

Abstract: 2SD2394 D310 2SD2167 D348 transistor D348
Contextual Info: Transistors 2SD2167 2SD2394 / 2SD2576 92S-358–D310 (94L-1098-D348) 314

buz358

Contextual Info: SIEMENS BUZ 358 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs BUZ 358 1000 V flbston 2.6 w 4.5 A Package Ordering Code TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol Continuous drain current b 7b = 25 °C

100n capacitor tantalum

Abstract: 120NQ045 CL10 SG1524B TAJA106K016R TPSD107K010R0050 TPSD336K025R0200 TPSV108K004R0035 electronic design
Contextual Info: TANTALUM AND NIOBIUM OXIDE CAPACITORS EQUIVALENT CIRCUIT MODEL APPLICABILITY TO SIMULATION SOFTWARE J. Pelcak AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 465 358 127 Fax: +420 465 358 128, email pelcakj@avx.cz ABSTRACT

Contextual Info: BUZ 358 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 358 1000 V 4.5 A 2.6 Ω TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol Continuous drain current

siba

Abstract: 2077132 siba nh gl Part DC92-01021B installation diagram SIBA FUSE FF 500 mA SIBA 50 A Ultra Rapid 50 201 06 Siba 20 209 20
Contextual Info: copyright 2014 Maryland Metrics/SIBA Sicherungen-Bau GmbH 201 are available from: MARYLAND METRICS Our protection. Your benefit. SIBA Products are available from: MARYLAND METRICS P.O.Box 261 Owings Mills, MD 21117 USA phones: 410 358-3130 (800) 638-1830 faxes: (410) 358-3142 (800) 872-9329

Contextual Info: SIEMENS BUZ 358 SIPMOS Power Transistor • N channel • Enhancement mode 1 • Avalanche-rated VPT05156 3 Pin 1 Pin 2 Pin 3 D G S Type Vds Id f î DS on Package Ordering Code BUZ 358 1000 V 4.5 A 2.6 Q. TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter

Equivalent Circuit Model for Tantalum and Niobium Oxide Capacitors for use in Simulation Software

Abstract: 120NQ045 SG1524B TPSV108K004R0035 100n capacitor tantalum
Contextual Info: EQUIVALENT CIRCUIT MODEL FOR TANTALUM AND NIOBIUM OXIDE CAPACITORS FOR USE IN SIMULATION SOFTWARE J. Pelcak AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 465 358 127 Fax: +420 465 358 128, email pelcakj@avx.cz ABSTRACT

LPZ4E102S6L

Abstract: lpz4e lcd LVDS display 30 pin connector LCM lvds connector 40 pin TRANSISTOR MARK WY LG6632Z-1301 alpha 600 circular polarizer touch linear polarizer DF19G-20S-1C
Contextual Info: SPECIFICATION Liquid Crystal Display LC104S1-A1 LC104S1-A1 10.4“ SVGA TFT LCD PRELIMINARY SPECIFICATION Alpha Point Ltd. Vernissakatu 8A 01300 Vantaa, Finland http://www.alpha.fi Tel.: +358-9-34 64 34 1 Fax: +358-9-34 64 34 2 LCD LC104S1-A1 Version 03/2002

moulding compound

Abstract: TANTALUM
Contextual Info: TANTALUM CAPACITORS TECHNOLOGY FOR EXTENDED OPERATING TEMPERATURE RANGE T.Zedníček, Z.Sita, S.Pala AVX Czech Republic s.r.o., Dvorakova 328, 563 01 Lanskroun, Czech Republic Phone: +420 465 358 126 Fax: +420 465 358 128 A B S T R A C T New materials, capable to operate at higher temperatures, new techniques of

Contextual Info: PACKAGE OUTLINES Page SOTIOO 348 SOT122A 349 SOT422A 350 SOT423A 351 SOT437A 352 SOT439A 353 SOT440A 354 SOT441A 355 SOT442A 356 SOT443A 357 SOT445A 358 SOT445B 359 SOT446A 360 SOT447A 361 SOT448A 362 SOT469A 363 Philips Semiconductors Microwave transistors

transistor a1358

Abstract: a1358 a1358 transistor 2SA1358 2SC3421 toshiba 2sa-1358
Contextual Info: TOSHIBA 2SA1358 2 S A 1 358 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATIONS. 8.3 MAX. • • • Complementary to 2SC3421 Suitable for Driver of 60 to 80 Watts. High Breakdown Voltage.

PHC2300

Abstract: BSH202 200B PHC20306 PHP45N03LT php18n20e BST100 PHT11N06LT PHN203 PHB50N03LT
Contextual Info: Philips Semiconductors PowerMOS Transistors TYPE NUMBER PAGE Index TYPE NUMBER 2N7000 48 BSP110 2N7002 54 BSP120 PAGE TYPE NUMBER PAGE 203 BST84 358 208 BST86 364 BS107 60 BSP121 213 BUK100-50DL 385 BS107A 66 BSP122 219 BUK100-50GL 393 BS108 70 BSP126 221

Contextual Info: TOSHIBA 2SA1358 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 358 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. • Complementary to 2SC3421 • Suitable for Driver of 60 to 80 W atts. • High Breakdown Voltage. U nit in mm MAXIMUM RATINGS (Ta = 25°C)

2SA1358

Abstract: 2SC3421 A1358 TRANSISTOR A1358
Contextual Info: 2SA1358 TO SH IBA 2 S A 1 358 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. 8.3 MAX. • • • 0 £ i± cn Complementary to 2SC3421 Suitable for Driver of 60 to 80 Watts. High Breakdown Voltage.

GS 358

Abstract: BUZ357 BUZ54A BUZ54 BUZ 54 BUZ 140 L
Contextual Info: SIEMENS SIPMOS Power MOS Transistors BUZ 54 BUZ 54 A BUZ 357 BUZ 358 = 1000 V = 4.5 . 5.1 A ^DS on = 2.0 . . . 2.6 Q VDS l0 • N channel • Enhancement mode • Packages TO-204 AA (TO-3) TO-218AA (TOP-3)1) TO-204AA 54/54 A) G TO-218AA Type Ordering code

A1358

Abstract: 2SA1358 2SC3421
Contextual Info: 2SA1358 T O S H IB A 2 S A 1 358 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUD IO FREQUENCY PO W ER A M PLIFIER APPLICATIONS 8.3 MAX. • • • 5.8 Complementary to 2SC3421 Suitable for Driver of 60 to 80 Watts. High Breakdown Voltage.

buz357

Contextual Info: SIEMENS SIPMOS Power Transistors • • • BUZ 357 N channel Enhancem ent mode Avalanche-rated Type V Ds Id BUZ 357 1000 V BUZ 358 1000 V ^ D S on Package 1> Ordering Code 5.1 A 2.0 £2 TO -218 AA C 67078-S3110-A2 4.5 A 2 . 6 £2 TO -218 AA C 67078-S3111-A2

Lm358 amp

Abstract: LMv3211 R2C marking lm358 led driver A9 SOT-23 Lm324 as high pass filter marking kl SOT23-5 a13 marking sot23 LMV321M5 marking E5 amplifier
Contextual Info: O ctober 1998 LMV321 Single/ LMV358 Dual/ LMV324 Quad General Purpose, Low Voltage, Rail-to-Rail Output Operational Amplifiers General Description Features The LM V358/324 are low voltage 2.7—5.5V versions of the dual and quad com m odity op am ps, LM 358/324, w hich cu r­

pink noise

Abstract: 45MV AN-358
Contextual Info: ANALOG DEVICES AN-358 APPLICATION NOTE ► ONE TECHNOLOGY WAY • P.O. BOX 9106 • NORWOOD, MASSACHUSETTS 02062-9106 • 617/329-4700 Noise and Operational Amplifier Circuits by Lewis Smith and D.H. Sheingold INTRODUCTION A n operational am plifier’s ou tp u t always contains signals that

LM 324 N with 16 pin

Abstract: lm 324 circuit diagram
Contextual Info: Semiconductor LMV321 Single/ LMV358 Dual/ LMV324 Quad General Purpose, Low Voltage, Rail-to-Rail Output Operational Amplifiers General Description Features The LM V358/324 are low voltage 2 .7 -5 .5 V versions of the dual and quad com m odity op am ps, LM 358/324, w hich cu r­

LMv3211

Abstract: Lm324 as high pass filter marking c7 sot-23-5 Lm358 as high pass filter Marking c9 SOT23-5 4.output A9 sot-23-5 marking kl SOT23-5 marking tm sc70-5 a13 sot23-5 A9 SOT-23
Contextual Info: M arch 1998 LMV321 Single/ LMV358 Dual/ LMV324 Quad General Purpose, Low Voltage, Rail-to-Rail Output Operational Amplifiers General Description Features The LM V358/324 are low voltage 2.7—5.5V versions of the dual and quad com m odity op am ps, LM 358/324, w hich cu r­

2904V

Abstract: LM2904
Contextual Info: M M O T O R O L A . LM 358, LM 258, LM 2904, LM 2904V Dual Low Power O perational A m plifiers Utilizing the circuit designs perfected for recently introduced Quad Operational Amplifiers, these dual operational amplifiers feature 1) low power drain, 2) a common mode input voltage range extending to

OF lm 324

Abstract: 8 pin ic lm 358 120r lm 324 circuit diagram
Contextual Info: Semiconductor LMV321 Single/ LMV358 Dual/ LMV324 Quad General Purpose, Low Voltage, Rail-to-Rail Output Operational Amplifiers General Description Features The LM V358/324 are low voltage 2 .7 -5 .5 V versions of the dual and quad com m odity op am ps, LM 358/324, w hich cu r­

BUW12

Abstract: BUW12 PHILIPS BUW12A
Contextual Info: I I N AUER PHILI P S / D I S C R E T E bTE V m bb53^31 0 0 2 0 3 3 1 358 1 IAPX BUW12 BUW12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, switching regulators, m otor control systems etc.