34N50 Search Results

5STP34N5200

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 3600 A 5650 A 55000 A 1.03 V 0.160 mΩ Ω Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA1002-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

34N50

Abstract: TQ 5100
Contextual Info: Key Parameters VDSM = 5200 ITAVM = 3350 ITRMS = 5250 ITSM = 55000 VT0 = 1.03 rT = 0.160 V A A A V mΩ Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA 1002-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses

R161051000

Abstract: 24N50 272b1 R161183000 R161311300 53S107-803N3 astro 612118 53s101 11N-50-7-43C 53K401-200N3
Contextual Info: Connectivity.for Business-Critical Continuity Type N Connectors Product Catalog Connectivity.for Business-Critical Continuity Type N Connectors Johnson Type N Connectors meet or exceed the performance requirements of MIL-PRF-39012. All designs are based on 50 ohm system impedance per MIL-STD-348, and operate at frequencies up to

Contextual Info: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 5200 V 3600 A 5650 A 55000 A 1.03 V 0.16 mΩ Ω Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA1002-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications

Contextual Info: VDSM = 5200 V ITAVM = 3600 A ITRMS = 5650 A ITSM = 55000 A VT0 = 1.03 V rT = 0.160 mΩ Phase Control Thyristor 5STP 34N5200 Doc. No. 5SYA1002-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications