34BTB Search Results

FDH666

Abstract: FDH600
Contextual Info: FAIRCHILD SE MIC OND UC TOR s s p A Schlumberger Company B4 : DE~J 34bTb?4 00E733S A B S S S fg a S S A“ " ' Ultra Fast Diodes PACKAGES • C . .2.5 pF MAX FDH600, 3.5 pF (MAX) FDH666 • VF . . . 1.0 V (MAX) @ 100 mA (FDH666) . . . 1.0 V (MAX) @ 200 mA (FDH600)

1S921

Abstract: 1S920 1s922 equivalent 1s923
Contextual Info: FAIRCHILD SEMICON DUC TO R A4 DEr| 34bTb74 DDS7S0D A 1S920/921/922/923 FDLL920/921/922/923 FAIRCHILD A Schlumberger Company General Purpose Diodes _ T - ° \ ' o C \ • V p . . . 1.2 MAX @ 200 mA • Ir . . 100 nA (MAX) @ RATED WIV ABSOLUTE MAXIMUM RATINGS (Note 1)

IRF510

Abstract: Gate Drive circuit for irf510 irf510 power IRF5105 7937 4N10 DD57 IRF510-513 IRF511 IRF512
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR f l 14 D e I 3 4 ^ 7 4 DGETTBM fl I IRF510-513 MTP4N08/4N10 T 3 9 // N-Channel Power MOSFETs, 5.5 A, 60-100 V FA IR C H ILD A Schlumberger Company Power And Discrete Division Description TO-220AB These devices are n-channel, enhancement mode, power

B1030

Abstract: high voltage swiching transistors swiching full KSC2752
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSC2752 HIGH SPEED, HIGH VOLTAGE SWICHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic Unit Collector- Base Voltage Collector-Em itter Voltage V cbO 500 V V cE O 400 V Emitter- Base Voltage VEbo 7 V

34B SOT

Abstract: NDT455N
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

N55C

Abstract: NDB6060 NDB6060L NDP6060L
Contextual Info: April 1996 N N D P6060L / N D B 6060L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T h e se logic le v e l N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field effe c t tra n s is to rs are p ro d u c e d u sin g

Contextual Info: F A IR C H IL D Ju,y1999 SEMICONDUCTOR tm FDG6304P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

Contextual Info: SEMICONDUCTOR ru NC7ST32 TinyLogic 2-Input OR Gate General Description Features The NC7ST32 is a single 2-Input high performance CMOS OR Gate, with TTL-compatible inputs. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation. ESD protection diodes inherently guard

Contextual Info: National S e m i c o n d u c t o r 1' June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

8s00

Contextual Info: S E M IC O N D U C T O R tm NC7ST00 TinyLogic 2-Input NAND Gate General Description Features The NC7STOO is a single 2-Input high performance CMOS NAND Gate, with TTL-compatible inputs. Advanced Silicon Gate CMOS fabrication assures high speed and low power

Contextual Info: September 1996 N ational S e m i c o n d u c t o r 1' NDT3055L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features P ow er SO T lo gic level N-C hannel e n h a n ce m e n t m o d e fie ld e ffect tra n s is to rs are pro d u ce d using

Contextual Info: M ay 1994 N NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National's

Contextual Info: September 1996 National S e m i c o n d u c t o r 1' NDT3055 N-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT N-Channel enhancem ent mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

MPSL08

Abstract: 2N5224 schlumberger 5225 2N5226 2N5223 2N5225 2N5227 2N5228 2N5224 current gain mps-l08
Contextual Info: FAIRCHILD SEMICON DUC TO R s 3469674 F A IR C H IL D f l4 84D SEM ICONDUCTOR • • • 27596 " |~ D N P N S m all Signal G en eral Purpose A m p lifie r & O sc illa to r A Schlumberger Company • 3 2N5223/FTS05223 FAIRCHILD • • D eT J PACKAGE 2N5223

2N2907A FAIRCHILD SEMICONDUCTOR

Abstract: 2N2904 transistor TO92 2N3053 characteristic curves Fairchild, 2N3019 2N2904 FAIRCHILD SEMICONDUCTOR 2N2907A fairchild FTS02907A TRANSISTOR 2n3108 fairchild 2n3019 transistor 2N 3020
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE 3 4 b cIL,7M 00S7S3L: 7 3 4 69 67 4 F A I R C H I L D S E M I C O N D U C T O R 84D 27536 2N2710/FTS02710 ^ 3ir^ NPN Small Signal High Speed Low Power Saturating Switch Transistor F A IR C H IL D A Schlumberger Company PACKAGE

mps 444

Abstract: ib74 2N4125 2N4126 FTS03392 FTS03393 MPS3392 MPS3393 t144 curve set t144
Contextual Info: &H FAIRCHILD SEM ICO NDUCTOR DE ÍB Mb Tb 74 005737b MPS3392/FTS03392 MPS3393/FTS03393 FAIRCHILD A Schlumberger Company NPN Small Signal General Purpose Amplifiers - — « « • . . . 25 V M in hFE . • • 150-300 (M P S /FT S 03392), 90-180 (M P S /FT S 03393)

MPS A56 transistor

Abstract: MPS 3117 T164 MPS A13 transistor A42 MPSA42 NPN FTSOA12 MPSA10 MPSA12 MPSA13 Schlumberger
Contextual Info: FAIRCHILD SE MI CO ND UC TO R fi4 . . . 40 V T ' #X P \-'V A IVi^SAiy NPN A m plifier Transistor A Schlum berger C om pany Vceo |g 34^^1,74 D0S73TE -=| y P S A IO F A IR C H IL D dT Min PACKAGE MPSA10 TO-92 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures

2N6760

Abstract: MF2400 2N6759 E7A04
Contextual Info: ñ4 3469674 FAIRCHILD SEMICONDUCTOR uni n i dËT| 3 4 b T t , 7 4 □ □ 2 7 A D D 84D 27800 D 2N6759/2N6760 N-Channel Power MOSFETs, 5.5 A, 350 V/400 V F a ir c h ild A Schlum berger Com pany _ Power And Discrete Division D escription These devices are n-channel, enhancement mode, power

fairchild 2N2222A

Abstract: 2n2222a fairchild 2N2222 curve 2N2219 Fairchild 2N2219A FAIRCHILD SEMICONDUCTOR 2N1613 fairchild 2222A fairchild tr 2n2222 T145 2N2222-PN2222
Contextual Info: •FAIRCHILD SEMICONDUCTOR 7 fl4 DlF| 3 4 ^ b 7 4 ~ 0 0 E 7 S 0 4 S 3469674 FAIRCHILD SEMICONDUCTOR m m as&i\ f a i^ urn ram h i^ 84D 27504 2N 718A 2N 1613 T - ^ - D H ¿3 A Schlumberger Company NPN Small Signal General Purpose Am plifiers • • Vceo . . . 32 V Min

Contextual Info: SEMICONDUCTOR NC7ST86 TinyLogic™ 2-Input Exclusive-OR Gate General Description Features The NC7ST86 is a single 2-Input high performance CMOS Exclusive-OR Gate, with TTL-compatible inputs. Advanced Silicon Gate CMOS fabrication assures high speed and low

Contextual Info: S E M IC O N D U C T O R tm 74ACQ240 • 74ACTQ240 Quiet Series Octal Buffer/Line Driver with 3-STATE Outputs General Description Features The ACQ /A CTQ 240 is an inverting octal buffer and line driver designed to be employed as a memory address driver,

Contextual Info: s e m ic o n d u c t o r NC7SZ38 Tiny Logic™ UHS 2-Input NAND Gate Open Drain Output General Description Features The NC7SZ38 is a single 2-lnput NAND Gate with open drain output stage from Fairchild's Ultra High Speed Series of TinyLogic™ in the space saving SOT23 package. The de­

Contextual Info: SEM ICONDUCTOR ,u NC7SZ00 TinyLogic UHS 2-Input NAND Gate General Description Features The NC7SZOO is a single 2-Input NAND Gate from Fair­ child's Ultra High Speed Series of TinyLogic™ in the space saving SOT23 package. The device is fabricated with ad­

Contextual Info: SEM ICONDUCTO R ru NC7S00 TinyLogic 2-Input NAND Gate General Description Features The NC7S00 is a single 2-Input high performance CMOS NAND Gate in the SOT23 package. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit operation over a broad Vcc range. ESD protection diodes in­