33LS Search Results

I300

Abstract: LN22 LN222RPX
Contextual Info: m « æ ÉP «1 Hi Approved Checked \ilV <S> Checked ft m Designed pbp m *& PRODUCT STANDARDS \ ^ LN 2 2 2 R P X ítS 'J/T Y P E 4 ÆiÊ/ APPLICATION ^ /S T R U C T U R E ¿ ^ /O U T L IN E Condition — K G aP )/R ed Light Emitting Diode(GaP) tjn Æ/In d icato rs

RZ2731B60W

Abstract: FO-57D
Contextual Info: _I l N AMER PHILIPS/DISCRETE □ bE D • _ ^53131 0Q15537 7 RZ2731B60W" T - 3 3 - 5 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2,7 to 3,1 GHz.

s10p40

Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge

Contextual Info: 19-4500, Rev 2, 6/94 C a lib ra te d Q u a d 1 2 -B it V o lta g e -O u tp u t D/A C o n v e rte rs The M AX526/MAX527 contain four 12-bit, voltage-output digital-to-analog converters DACs Precision output buffer am plifiers are included on-chip to provide voltage outputs

AM29F200

Contextual Info: FIN A L Am29F200T/Am29F200B Adva^ 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS S.O Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ ■ Compatible with JEDEC-standards ■ — P in o u t a n d so ftw a re c o m p a tib le w ith

plcc44 mechanical

Abstract: 33LS thermal head inkjet
Contextual Info: ¿ = 7 S G S -T H O M S O N ^ 7 M. EülD [3 9 (iiLI©ra©[)i!lD©§ L6451 28 CHANNEL INKJET DRIVER ADVANCE DATA • 40V DMOS OUTPUT BREAKDOWN ■ PRECISE OUTPUT ENERGY ■ ESD OUTPUT PROTECTION WITH CLAMP­ ING DIODES ■ VERY LOW QUIESCENT CURRENT ■ PLCC44 OR PQFP44 (10 x 10mm)