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RZ2731B60W Abstract: FO-57D Contextual Info: _I l N AMER PHILIPS/DISCRETE □ bE D • _ ^53131 0Q15537 7 RZ2731B60W" T - 3 3 - 5 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2,7 to 3,1 GHz.	OCR Scan	0q15537 rz2731b60w 0q15e fo-57d	PDF

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RZ2731B60W

Abstract: FO-57D
Contextual Info: _I l N AMER PHILIPS/DISCRETE □ bE D • _ ^53131 0Q15537 7 RZ2731B60W" T - 3 3 - 5 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range of 2,7 to 3,1 GHz.

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