33E MARKING Search Results

1rf9530

Contextual Info: International k? r Rectifier HEXFET Pow er M O S F E T 4655452 □D14642 33E PD-9.320G IINR IRF9530 INTERNATIONAL RECTIFIER bSE D Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C 33E marking marking TN4
Contextual Info: 711002b 001364145 33e? H P H IN BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic SOT-23 package primarily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio frequency equipment in thick and thin-film hybrid circuits.

1N4446

Abstract: 1N4148 derating 1N4148 1N4448 FIT4
Contextual Info: TERRY S E M I C O N D U C T O R INC 33E D • ÔT^G? G0QQ014 Ô ■ TERRY m 1N4148 1N4446 1N4448 HIGH-SPEED SILICON DIODES Whiskerless diodes in subminiature DO-35 envelopes. These diodes are primarily intended for fast logic applications. QUICK REFERENCE DATA

Contextual Info: 33E D • fl2 3 b 3 2 Q Q O lb S Û S 0 H S IP Silicon Diode Array S IE M E N S / BGX 50 A SPCL-, SEM ICÔ N DS _ • Bridge configuration • High-speed switch diode chip 4 2 Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape

zener diode color codes

Abstract: zener diodes color codes zener color codes 3.9BI glass tube zener diode code color glass diode color codes glass zener diode color codes BI 33 zener MA zener color codes DIODE COLOR BAND MARKING CODES
Contextual Info: 33E J> • PTAIYO YUDEN USA INC T ? ^ -0 flfi35M75 D0Q0577 0 1 T Y I . ; ( q ) J f ^ C D ^ § g = ] 2 > 7 , > - y - ^ r o ^ ^ e i £ i g i T ; § g i : | q l i i C ^ J L 5 1^ 0 > K ^ ' q I^ T !^ o The following two types of diodes are provided by TAIYO YUDEN :

mb 428 ic data

Abstract: 33E marking
Contextual Info: M I CR ON T E C H N O L O G Y INC 33E » • b lllS M T GQQB7bl^ S « M R N T H tr Z l-O S , SRAM 1 MEG X 1 SRAM '> a ' FEATURES • High speed: 25,35, and 45ns • High-performance, low-power, CMOS double metal process • Single +5V ±10% power supply

zener diode color codes

Abstract: glass diode color codes COLOR BAND MARKING CODES DIODE COLOR BAND MARKING CODES QDS53 QDS54 QDS55 QDS953 QDS954 QDS955
Contextual Info: T - 'y Z f f j f i a a "•C H IP C O M P O N E H T S >•••*• TAIYO YUDEN USA INC 33E D ■ ÛÔBSMVS QGGDSÛQ 0 BITYI <0°v '■. •*; ' ;•:"'• :- '-. ' V C :k ÿ . ÿ $ ^ ■ ' . i - S W IT C H IN G ' T Y P E ' V- ir î- ?■'. ; H ' -’ .>> * Y

33E marking

Contextual Info: LCS16CXXL08 SERIES 5 3 " Brightking's LCS16CXXL08 series of TVS arrays are designed to protect sensitive ! $ " & ! " # ! % $ % $ ' ' ' ( )* $ ! & & ' $ ! % $ ! % % ' ! % ! $ ! " IEC61000-4-2 ESD 15kV Air, 8kV contact compliance +, ! ! - Protects eight I/O lines

applications of microprocessor in printer

Abstract: 16C450 82C50A COM92C451 33E marking T-75-37-05
Contextual Info: STANDARD MICROSYSTEMS _ 3 3 E as bMt at Q o oso it q n s n c t STANDARD MICROSYSTEMS CORPORATION^ COM92C451 T-15-37-0S 35Marcus Blvd. Hauppauge. N.Y. 11788 516 273*3100 • FAX: 516-231-6004 (t Combination UART/Printer Interface FEATURES □ Fully IBM PC , PC XT®,

Contextual Info: .100" X .100" Condo Header Right Angle, 4 Wall/4 Wall, High Temp Option 3000 Series • Stacked pins conserve space on the circuit board allowing higher density packaging • Pin quantity to 128 gives design flexibility with latching • “ HDI” alternative

pabi

Abstract: SL13 SL14 SSL12 SSL13 SSL14 B03 marking PABI MARKING
Contextual Info: E SSL12 - SSL14 TAIWAN SEMICONDUCTOR 1.0 AMP. Surface Mount Low V F Schottky Barrier Rectifiers SMA/DQ-214AC RoHS COM PLIANCE .van y/> Features 4•v- -v-v444- <■ Tor su rface m ou nted application Metal silicon Junction, m ajority carrier con ductlon

MS90311

Abstract: MS90311-271 MS90310 MS25307 MIL-S-8834 MS21027 K851 MS21353 transistor D331 circuit diagram application ms25307-212
Contextual Info: SECTION A TOGGLE SWITCHES Introduction Industrial – Environmentally Sealed Switches • Watertight seal per MIL-STD-108 • Ratings at 28VDC and 115VAC 60/400Hz • One, two and four pole configurations • Toggle and designerline actuators • Positive detent action

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. ID / COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 2 3 - LOC REVISIONS DIST ALL RIGHTS RESERVED. P LTR DESCRIPTION C SEE 2 SHEET 2 FOR RECOMMENDED P.C. BOARD LAYOUT. TRUE 2 . DWN APVD PY BW 20SEP07

T2514

Contextual Info: SGS-THOMSON T2514XKS T2516xKS mi SNUBBERLESS TRIACS FEATURES • I t RMS = 25A ■ HIGH COMMUTATION : (dl/dt)c;> 12A/msT2514xKS S: 22A/ms T2516xKS . INSULATING VOLTAGE =2500V(rms) (UL RECOGNIZED : E81734) DESCRIPTION The T2514/T2516xKS series of isolated triacs

AH165-2

Abstract: AH30 FUJI AF97-68
Contextual Info: COMMAND SWITCHES AR22•DR22/AR30•DR30 AH164•AH165•AH165-2 16mm/22mm/30mm Diameter USEH417 Preface Fuji Electric manufactures FUJI COMMAND SWITCHES-pushbutton, illuminated pushbutton, and selector switches, and pilot lights. FUJI COMMAND SWITCHES are used in machine tools, industrial machines, control panels, distribution panels, and

Contextual Info: NCS333, NCV333 10 mV Offset, 0.07 mV/5C, Low Power, Zero-Drift Operational Amplifier The NCS333 is a precision op amp with very low input offset voltage 10 mV max and near−zero drift over time and temperature. This high precision, low quiescent current amplifiers has high

Contextual Info: BL Minute Current Switches • ■ . Designed for PC Board Applications - 1. Term inal pitches are all in inch size m ultiples o f 2.54mm .

BYD71A

Abstract: BYD71 BYD71B BYD71C BYD71D BYD71E BYD71F BYD71G
Contextual Info: ODEbLiDD Ö5D • APX b'lE T> N AUER PHILIPS/DISCRETE Product spécification Philips semiconductors BYD71 series Epitaxial avalanche diodes DESCRIPTION Rectifier diodes in hermetically sealed axial-leaded ID implosion diode envelopes. They feature low forward voltage drop, very fast

IN23C

Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
Contextual Info: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low

Contextual Info: WS27C210L Military 64K x 16 CMOS EPROM KEY FEATURES Ultra-High Performance • JEDEC Standard Pin Configuration — 120 ns Access Time — 40 Pin CERDIP Package — 44 Pin Leadless Chip Carrier CLLCC — 44 Pin Leaded Chip Carrier (CLDCC) DESC SMD No. 5962-86805

Contextual Info: t& a. tâiuiiaÉdÉâtXaÉRiidtaM MICRON TECHNOLOGY INC f* 3flE ]> blllSM"] 0 0 0 5 Û G C1 ? Hf IR N n T ^ L - l l -iO . -'JJIJJf - • ■ < ¡hm-irMUfrr- ‘iff» ' ■ 16K x 4 SRAM SRAM W IT H S E P A R A TE IN P U T S A N D O U T P U T S FEATURES PIN ASSIGNMENT Top View

SIT8002

Contextual Info: SiT8002AA Advanced Information Automotive Temperature Range Oscillator Features Benefits • Operating temperature range: • • • • No crystal or capacitors required Eliminates crystal qualification time 50% + board saving space Most cost effective than Quartz oscillators, Quartz crystals

SiT8002

Abstract: A104 JESD22
Contextual Info: SiT8002 1 to 125 MHz Programmable Oscillator Features • High drive option: 30pF load contact factory Benefits • ±60 ps Peak-Peak Period Jitter • Wide frequency range • • • • No crystal or capacitors required Eliminates crystal qualification time

transistor zo 103 MA 7S 738

Abstract: BFQ72 SiEMENS PM 350 98 Q62702-F776 VCE05181 siemens 350 98 siemens Pm 90 87
Contextual Info: SIEMENS NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. £ CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!