33A D Search Results

Contextual Info: RCX330N25 Nch 250V 33A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

Contextual Info: SEMICONDUCTOR SC-33A PACKAGE DIMENSION B A C DIM MILLIMETERS _ 0.1 3.0+ A _ 0.1 3.0 + B _ 0.12 C 1.15+ 1.50 TYP. D 0.61 TYP. E 1.78 TYP. F G 0.76 TYP. G PIN NO FUNCTION 3 4 2 5 1 6 1 E F D SC-33A 5 3 2 4 6 GROUND SIGNAL SIGNAL

ic 3843

Abstract: IC 3843 8 Pin 3843 PWM power supply application note ic 3843 external TL 3843 P 3843 Power Supply IC TL 3843 3833A 3843 application note
Contextual Info: ASSP For Power Supply Applications Lithiumion Battery Chargers . DC/DC Converter 1C (High Precision with Constant-current Function)_ • DESCRIPTION The FUJITSU M B3813A/33A/43is a pulse width modulation (PWM) DC/DC converter 1C with independent output

75631P

Abstract: 75631S AN9321 AN9322 HUF75631P3 HUF75631S3S HUF75631S3ST TB334
Contextual Info: HUF75631P3, HUF75631S3S TM Data Sheet July 2000 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET File Number 4720.2 Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3S Features

AON7406

Contextual Info: AON7406 30V N-Channel MOSFET General Description Features The AON7406 uses advanced trench technology and design to provide excellent RDS ON with low gate charge. This device is suitable for use in SMPS and general purpose applications. VDS (V) = 30V ID = 33A

mosfet 10a 600v

Abstract: td 1410 IRGP50B60PD 600V 25A Ultrafast Diode irfp250 DRIVER P channel 50A IGBT 30ETH06 IRFP250 50AIF
Contextual Info: PD - 94624B IRGP50B60PD SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

IRFP250 equivalent

Abstract: 035H 30ETH06 IRFP250 IRFPE30 IRGP50B60PD1 irgp50B60
Contextual Info: PD - 94625 IRGP50B60PD1 SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies

QSW033

Abstract: QSW033A0B641-HZ 55022B
Contextual Info: Data Sheet January 25, 2011 QSW033A0B Series Power Modules; DC-DC Converters 36-75Vdc Input; 12Vdc Output; 33A Output Current Features Applications RoHS Compliant • Compliant to RoHS EU Directive 2002/95/EC -Z versions • Compliant to ROHS EU Directive 2002/95/EC with lead

diode 132

Contextual Info: APT8024B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT10030L2VR

Abstract: DSA003669
Contextual Info: APT10030L2VR 1000V 33A 0.300Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT10030L2VFR

Abstract: DSA003668
Contextual Info: APT10030L2VFR 1000V 33A 0.300Ω POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10030L2VR 0.300Ω 1000V 33A POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

QSK033

Abstract: QSK033A0B QSK033A0B-H CC109149225
Contextual Info: Data Sheet February 2, 2009 QSK033A0B Series Power Modules; DC-DC Converters 36-60 Vdc Input; 12Vdc Output; 33A Output Current Features ƒ Compliant to RoHS EU Directive 2002/95/EC -Z versions ƒ Compliant to ROHS EU Directive 2002/95/EC with lead solder exemption (non-Z versions)

fujitsu battery charger

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27700-5E ASSP For Power Management Applications Secondary battery Lithium Ion Battery Charger DC/DC Converter IC (High Precision with Constant-current Function) MB3813A/MB3833A/MB3843 • DESCRIPTION The FUJITSU MB3813A/33A/43 are pulse width modulation (PWM) DC/DC converter ICs with independent output

Contextual Info: APT8024B2VFR APT8024LVFR 800V 33A POWER MOS V FREDFET 0.240Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: ^ Straight Pin & Threaded Body Feed - Thru Terminals ADVANCED INTERCONNECTIONS 5 Energy Way, P.O. Box 1342, West Warwick, Rl 02893 • Tel. 401-823-5200 •FAX 401 -823-8723 * TWX 9102403454 EMC*Product "FT" Series Type 32 Type 33A Type 33 Material: Plating:

Contextual Info: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFN40N90P = = < < RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier 900V 33A Ω 230mΩ 300ns miniBLOC E153432 Symbol Test Conditions S Maximum Ratings G VDSS TJ = 25°C to 150°C 900

mxj connector

Abstract: MOLEX mxj connector 520
Contextual Info: 'xT © 0.4 (OFF-CENTER DIMENSION BETWEEN CONTACT PO SITION & SOLDER TA IL CENTER LINE) 43.95 39-5 -3343 5597-34A PB 34 47.00 42.70 -3333 -33A PB 33 -3323 \ -32A PB 32 48.25 tQ 45.75 -00 4 1.45 44.50 40.20 43.25 0.5 „±0.1 ( A (PITCH) -29A PB 29 -28A PB

APT8020JLL

Abstract: APT30DF100
Contextual Info: APT8020JLL 800V POWER MOS 7 R 33A 0.200Ω MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

10025P

Contextual Info: A P T 10025P V R ADVANCED PO W ER Te c h n o l o g y iooov 33A 0.250a POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT32M80J 800V, 33A, 0.19 N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT32M80J

Abstract: MIC4452
Contextual Info: APT32M80J 800V, 33A, 0.19Ω Max N-Channel MOSFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

A33A

Abstract: F073 F03-31
Contextual Info: EDD NOTES: 1. UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± DRAWING NO.: REV. 33A I006*F .0 1 0 ” [,2 5 4 m m ]. B .975 [2 4 .7 7 m m ]' .210 MAX [5 .3 3 m m ] .725 [1 8 .4 2 m m ]' .125 [3.1 8 m m ] .110 [2 .7 9 m m ]' .375 [9 .5 3 m m ] 2X 0.125 [03.1 8 m m ]

2SD636

Contextual Info: á<i ZHIM A so 09fr S‘ £ OSI £0 Z H W I = *0= aI ‘A 01 = 83A ZH W 002=J ‘V“ 2 - = aI ‘A 0 l= 93A 091 L A <1»S)3Dyy y w z = 3i ‘a o i = 33a 0= DI ‘V ^ 0I = aI , 3dq oaaA 0= aI ‘v u l2 = 3l oa3A 0- aI ‘V rf0I —3I oa3A 0= aI ‘A 0Z = a3A