33A D Search Results

BP5232-25A

Abstract: BP5232-33A BP5233-33A BP5234-33A
Contextual Info: BP5232-25A / BP5232-33A / BP5233-33A / BP5234-33A Power Module DC / DC converter BP5232-25A / BP5232-33A / BP5233-33A / BP5234-33A The BP5232-25A, BP5232-33A, BP5233-33A and BP5234-33A are DC / DC converters that use PWM system and VIF system. They contain control circuits, switching devices and coils, and operate by only connecting an I/O smoothing

BP5232-25A

Abstract: BP5232-33A BP5233-33A BP5234-33A capacitor 1000uF 50V
Contextual Info: BP5232-25A / BP5232-33A / BP5233-33A / BP5234-33A Power Module DC / DC converter BP5232-25A / BP5232-33A / BP5233-33A / BP5234-33A The BP5232-25A, BP5232-33A, BP5233-33A and BP5234-33A are DC / DC converters that use PWM system and VIF system. They contain control circuits, switching devices and coils, and operate by only connecting an I/O smoothing

Contextual Info: Digital DC/DC PMBus 33A Module ISL8271M Features The ISL8271M is a 33A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 33A of

FSJ264D3

Abstract: FSJ264R 1E14 2E12 FSJ264D FSJ264D1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSJ264D, FSJ264R Data Sheet 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs [ /Title FSJ26 4D, FSJ26 4R /Subjec t (33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resista nt, NChann el Power MOSF ETs) /Autho r () /Keyw ords (33A, 250V, 0.080

Contextual Info: DATASHEET Digital DC/DC PMBus 33A Module ISL8271M Features The ISL8271M is a 33A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 33A of

TA9295

Abstract: irfp250 applications IRFP250 TB334 transistor IRFP250
Contextual Info: IRFP250 Data Sheet July 1999 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP250 • 33A, 200V • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

1E14

Abstract: 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1 FSJ264R3
Contextual Info: FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

Contextual Info: Œ M A FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 33A, 250V, rDS 0N = 0.0800 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: RCX330N25 Nch 250V 33A Power MOSFET Datasheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

TRANSISTORS 132 GD

Abstract: IRF150 kiv-8 IRF151 circuits of IRF150
Contextual Info: IRF150, IRF151, IRF152, IRF153 Semiconductor 33A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 33A and 40A, 60V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: FSJ264D, FSJ264R S em iconductor 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, i"[ s ON) = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: Application Note 1925 ISL8271MEVAL1Z Evaluation Board User Guide The ISL8271M is a 33A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 33A of

rcj330

Contextual Info: RCJ330N25 Nch 250V 33A Power MOSFET Data Sheet lOutline VDSS 250V RDS on (Max.) 105mW ID 33A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

arinc 404

Contextual Info: DPX A RIN C 404 DPX Panel Cutouts Rack and Panel Connectors DPX2 All tolerances ate + . 0 1 5 0.38| unless otherwise noted. -33 FRONT MOUNT -33 REAR MOUNT -33A & -33B FRONT MOUNT A -33A REAR MOUNT -34B FRONT MOUNT For - 2 3 float mtg. mod. 1.78 (45 .21 .

Contextual Info: SEMICONDUCTOR SC-33A PACKAGE DIMENSION B A C DIM MILLIMETERS _ 0.1 3.0+ A _ 0.1 3.0 + B _ 0.12 C 1.15+ 1.50 TYP. D 0.61 TYP. E 1.78 TYP. F G 0.76 TYP. G PIN NO FUNCTION 3 4 2 5 1 6 1 E F D SC-33A 5 3 2 4 6 GROUND SIGNAL SIGNAL

017BH

Contextual Info: PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. R8C/33A Group REJ03B0228-0001 Rev.0.01 Oct 26, 2007 RENESAS MCU 1. Overview 1.1 Features The R8C/33A Group of single-chip MCUs incorporates the R8C/Tiny Series CPU core, employing sophisticated

Contextual Info: MCOTS-C-28E-12-HZ Single Output Half-brick a pu d bl va ic n at ce io d n MILITARY COTS DC/DC CONVERTER 16-70V Continuous Input 16-100V Transient Input 12V Output 33A Output 94%@16.5A/94%@33A Efficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings

Contextual Info: Customer Information Sheet D RAWING N o .: SHEET M80-5S2I005ML-02-33A-04-33A 2 OF 2 1 IF IN D OUBT - ASK | c | NOT TO SCALE | THIRD ANGLE PROJECTION T ALL DIMENSIONS I N mm SPECIFICATIONS: MATERIAL: MOULDING: GLASS F I L L E D PPS, U L9 4 V -0 , BLACK S I G N A L CO NTA CT: PHOSPHOR BRONZE

ic 3843

Abstract: IC 3843 8 Pin 3843 PWM power supply application note ic 3843 external TL 3843 P 3843 Power Supply IC TL 3843 3833A 3843 application note
Contextual Info: ASSP For Power Supply Applications Lithiumion Battery Chargers . DC/DC Converter 1C (High Precision with Constant-current Function)_ • DESCRIPTION The FUJITSU M B3813A/33A/43is a pulse width modulation (PWM) DC/DC converter 1C with independent output

DX34C

Abstract: DX34
Contextual Info: BDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BDX33/33A/33B/33C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base : B DX34 BDX34A BDX34B

75631P

Abstract: 75631S AN9321 AN9322 HUF75631P3 HUF75631S3S HUF75631S3ST TB334
Contextual Info: HUF75631P3, HUF75631S3S TM Data Sheet July 2000 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET File Number 4720.2 Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUF75631P3 HUF75631S3S Features

FSj264

Contextual Info: FSJ264D, FSJ264R Data Sheet 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

76423P

Abstract: HUF76423P3 HUF76423S3S HUF76423S3ST TB334 76423S
Contextual Info: HUF76423P3, HUF76423S3S Data Sheet October 1999 File Number 4708.2 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 23P Packaging JEDEC TO-220AB GATE SOURCE DRAIN FLANGE HUF76423P3 HUF76423S3S D rpor on, ann gic vel raF wer OSF

ap4418

Abstract: AP4418GJ
Contextual Info: AP4418GH/J Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic 35V RDS ON 20mΩ ID G ▼ RoHS Compliant BVDSS 33A S Description