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    ARF461AG

    Abstract: ARF461A ARF461B VK200-4B 40.68mhz 40.68MHz power amplifier
    Contextual Info: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been


    Original
    ARF461A ARF461B 65MHz ARF461AG VK200-4B 40.68mhz 40.68MHz power amplifier PDF

    arco mica trimmer

    Abstract: class B push pull power amplifier ARF461A ARF461B VK200-4B class td amplifier
    Contextual Info: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been


    Original
    ARF461A ARF461B O-247 65MHz ARF461A ARF461B O-247 335nH VK200-4B ARF461A/B arco mica trimmer class B push pull power amplifier class td amplifier PDF

    VK200-4B

    Abstract: ARF461A ARF461B
    Contextual Info: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been


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    ARF461A ARF461B O-247 65MHz ARF461A ARF461B VK200-4B PDF

    LTC5599

    Contextual Info: LTC5599 30MHz to 1300MHz Low Power Direct Quadrature Modulator Description Features n n n n n Frequency Range: 30MHz to 1300MHz Low Power: 2.7V to 3.6V Supply; 28mA Low LO Carrier Leakage: –51.5dBm at 500MHz Side-Band Suppression: –52.6dBc at 500MHz Output IP3: 20.8dBm at 500MHz


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    LTC5599 30MHz 1300MHz 500MHz 156dBm/Hz 65dBm LTC5599 PDF

    l1335

    Abstract: DIP2212 LBN7007
    Contextual Info: SIPAT Co.,Ltd www.sipatsaw.com China Electronics Technology Group Corporation No.26 Research Institute LBN7007 SAW Filter Electrical Characteristic Specifications Parameter Unit Minimum Typical Maximum Center Frequency Insertion Loss MHz 69.8 70 70.2 22.9


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    LBN7007 128-LiNbO3 DIP2212 335nH 403nH l1335 DIP2212 PDF

    class b power transistors current gain

    Abstract: VK200-4B
    Contextual Info: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been


    Original
    ARF461A ARF461B O-247 65MHz ARF461A ARF461B class b power transistors current gain VK200-4B PDF

    Contextual Info: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been


    Original
    ARF461A ARF461B 65MHz PDF