ARF461AG
Abstract: ARF461A ARF461B VK200-4B 40.68mhz 40.68MHz power amplifier
Contextual Info: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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arf461aarf461b65mhzarf461ag+3vk200-4b40.68mhz40.68mhz power amplifier
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arco mica trimmer
Abstract: class B push pull power amplifier ARF461A ARF461B VK200-4B class td amplifier
Contextual Info: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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arf461aarf461bo-24765mhz+6335nhvk200-4barf461a/barco mica trimmerclass b push pull power amplifierclass td amplifier
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VK200-4B
Abstract: ARF461A ARF461B
Contextual Info: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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arf461aarf461bo-24765mhz+1vk200-4b
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LTC5599
Contextual Info: LTC5599 30MHz to 1300MHz Low Power Direct Quadrature Modulator Description Features n n n n n Frequency Range: 30MHz to 1300MHz Low Power: 2.7V to 3.6V Supply; 28mA Low LO Carrier Leakage: –51.5dBm at 500MHz Side-Band Suppression: –52.6dBc at 500MHz Output IP3: 20.8dBm at 500MHz
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ltc559930mhz1300mhz500mhz+2156dbm/hz65dbm
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l1335
Abstract: DIP2212 LBN7007
Contextual Info: SIPAT Co.,Ltd www.sipatsaw.com China Electronics Technology Group Corporation No.26 Research Institute LBN7007 SAW Filter Electrical Characteristic Specifications Parameter Unit Minimum Typical Maximum Center Frequency Insertion Loss MHz 69.8 70 70.2 22.9
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lbn7007128-linbo3dip2212335nh+2403nhl1335
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class b power transistors current gain
Abstract: VK200-4B
Contextual Info: ARF461A ARF461B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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arf461aarf461bo-24765mhz+2class b power transistors current gainvk200-4b
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Contextual Info: ARF461A G ARF461B(G) TO -24 7 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been
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