3300 TRANSISTOR Search Results

FD 1200

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FD 400 R 33 KF2 Datenblatt data sheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Tj = 25°C Tj = -25°C VCES 3300 3300 V Kollektor-Dauergleichstrom

fd transistor

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FD 400 R 33 KF2 Datenblatt data sheet Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Tj = 25°C Tj = -25°C VCES 3300 3300 V Kollektor-Dauergleichstrom

VPC3200A

Contextual Info: PRELIMINARY DATASHEET DDP 3300 A Single-Chip Display and Deflection Processor Edition June 19,1996 6251-421-1PD ITT INTERMETALL Mbfl2711 OODbüflfl 441 DDP 3300 A PRELIMINARY DATASHEET Contents Page Section Title 4 4 5 6 6 6 6 1. 1.1. 1.2. 1.3. 1.3.1. 1.3.2.

micronas ddp 3310

Abstract: VPC3210A 3211B VPC3211B PLCC68 320X 32XX 3310B
Contextual Info: PRELIMINARY DATA SHEET MICRONAS INTERMETALL Edition June 19, 1996 6251-421-1PD DDP 3300 A Single-Chip Display and Deflection Processor DDP 3300 A PRELIMINARY DATA SHEET Contents Page Section Title 4 4 5 6 6 6 6 1. 1.1. 1.2. 1.3. 1.3.1. 1.3.2. 1.3.3. Introduction

Contextual Info: MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HG-66H ● IC . 400 A ● VCES . 3300 V

MITSUBISHI CM400HG-66H

Abstract: D 400 F 6 F BIPOLAR TRANSISTOR HVIGBT 525k CM400HG-66H hvigbt diode 3g124
Contextual Info: MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HG-66H ● IC . 400 A ● VCES . 3300 V

Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HG-66H ● IC . 1200 A ● VCES . 3300 V

BIPOLAR TRANSISTOR

Abstract: CM1200HG-66H
Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HG-66H ● IC . 1200 A ● VCES . 3300 V

TRANSISTOR SMD 3401

Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide

NPN Transistor TO92 5V 200mA

Abstract: ZTX658
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ZTX658 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Transition Frequency f T TYP. MAX. 50 Output capcitance C obo Switching times t on t off 10 130 3300

Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide

Contextual Info: PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide

Contextual Info: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide

10UF

Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238
Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,

Contextual Info: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide

transistor smd f36

Abstract: CGH35015 CGH35015F 10UF 33UF CGH35015-TB tRANSISTOR 2.7 3.1 3.5 GHZ cw
Contextual Info: PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015F is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide

CGH35015

Abstract: CGH35015F CGH35015-TB JESD22 TRANSISTOR SMD 3401
Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,

TRANSISTOR SMD 3401

Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,

transistor E 13007

Abstract: 54-619 msl 9351 s-parameters cree marking information 00457 43251
Contextual Info: PRELIMINARY CGH35015S 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015S is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which

Contextual Info: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,

Tantalum

Abstract: CGH35060F-TB j121 10UF 470PF CGH3506 CGH35060 CGH35060F CGH35060-TB s-parameter
Contextual Info: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and

CGH35060

Abstract: CGH35060F
Contextual Info: CGH35060F 60 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal for 3.3-3.9GHz WiMAX and

PIMD3

Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power

PIMD3

Contextual Info: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power