330 TRANSISTOR Search Results

IRFP 740

Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power
Contextual Info: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7

IRFP 740

Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102
Contextual Info: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6

irfp 950

Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239
Contextual Info: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6

IRF 850

Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400

FUSE fast

Abstract: PKT 4113
Contextual Info: AUTOMATIONWORX User Manual UM EN ILC 330/350 Order No.: 2699370 Installing and Operating the ILC 330 ETH, ILC 350 ETH, ILC 350 ETH/M and ILC 350 PN Inline Controllers AUTOMATIONWORX User Manual Installing and Operating the ILC 330 ETH, ILC 350 ETH, ILC 350 ETH/M

Contextual Info: Wfiol mL/ÎMHEWLETT PACKARD Avantek Products Voltage-Controlled AGC Amplifier 5 to 300 MHz Technical Data AGC-330 Features Description Pin Configuration • Frequency Range: 5 to 300 MHz The AGC-330 combines two-stage thin-film bipolar RF amplifier using HP transistors, and PIN

TRANSISTOR W2

Abstract: PRSS0004ZG-A PRSP0014DE-B PRSS0004ZD-C HSOP-11 DPak Package Renesas
Contextual Info: Unit:mm Reel type A Ｂ Ｃ A 330 330 330 P1 8 8.0 8.0 A0 6.9 6.8 6.5 N 100 100 74-81 W1 16.4 17.4 17-19 W2 22.4 21.4 21-23 16-mm width emboss taping Taping code Package name W202-104-XX MP-3A Z1575F, 76F EMBOSS DPAK S HSOP-11 Renesas code Previous code PRSS0004ZG-A TMP3

HXTR-2001

Abstract: S21E 210SC
Contextual Info: COMPONENTS GENERAL PURPOSE TRANSISTOR CHIP Features HXTR-2001 CIRCUITS H E W L E T T ^ PACKARD 330 0.013 TYP. - HIGH OUTPUT POWER 20.0 dBm PidB Typical at 2 GHz LOW NOISE FIGURE 3.8 dB Typical at 4 GHz ' 90 (0.0035) 330 (0.013) FOR HYBRID . 1 . . WIDE DYNAMIC RANGE

AGC-330

Contextual Info: whn 1"KM H Ew LETT PACKARD Avantek Products Voltage-Controlled AGC Amplifier 5 to 300 MHz Technical Data AGC-330 Features Description Pin Configuration • Frequency Range: 5 to 300 MHz The AGC-330 com bines two-stage thin-film bipolar RF amplifier using HP transistors, and PIN

23P transistor sot 23

Abstract: PTZZ0005DA-A PWSN0008DD-A electrical symbol PRSP0008DD-D PRSP0008DA-B PRSP0008DD-A G300721H02 TSSOP-8 8d
Contextual Info: Unit:mm Reel type A B Ｃ Ｄ E F A 330 330 178 178 330 178 W 12 12 12 P1 8 8 8 A0 4.8 6.9 7 12.0 8.0 4.8 N 80 100 60 60 100 66 W1 13.5 13.5 13 13 13.4 13.5 W2 17.5 17.5 17 15.4 17.4 15.5 12-mm width emboss taping Taping code Package name Renesas code Previous code

RA30H3340M

Abstract: RA30H3340M-01 RA30H3340M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M 330-400MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to

TRANSISTOR 1300

Abstract: L-Band 1200-1400 MHz RT 6010.5 LM 1214-370M 1200 - 1400 MHz, L-Band Applications
Contextual Info: 1214-370MR4 1214 – 370M . 370 Watts - 50 Volts, 330 µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-370M is an internally matched, COMMON BASE transistor capable of providing 370 Watts of pulsed RF output power at 330 microseconds pulse width, ten percent duty factor across the band 1200 to

RA07N3340M

Abstract: RA07N3340M-01 RA07N3340M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to 400-MHz

hatfield attenuator

Abstract: RF MOSFET MODULE RA13H3340M RA13H3340M-01 RA13H3340M-E01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz

RA13H3340M

Abstract: RA13H3340M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to

IC 7017 Unit COUNTER

Abstract: HM62256 sram transistor 91 330 H8/330 HD63140 j1 3003 OMC932723278 Hitachi DSA0044 APS330-3002
Contextual Info: OMC932723278 H8/330 Application Notes On-Chip Supporting Modules Preface The H8/330 is an original Hitachi high-performance single-chip microcontroller with a high-speed H8/300 CPU core and a set of on-chip peripheral functions optimized for industrial embedded

msc diode

Abstract: msc transistor 1214-370V L-Band 1200-1400 MHz 1200 - 1400 MHz, L-Band Applications
Contextual Info: 1214-370V R1 . 1214 – 370V 370 Watts - 50 Volts, 330 µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-370V is an internally matched, COMMON BASE transistor capable of providing 370 Watts of pulsed RF output power at 330 microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This

1214-110V

Contextual Info: 1214-110V R1 1214-110V 110 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-110V is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 330 µs pulse width, 10% duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed

RA07N3340M

Abstract: RA07N3340M-01
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to

RA30H3340M

Abstract: RA30H3340M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to

RA13H3340M

Abstract: RA13H3340M-101
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to

RA55H3340M

Abstract: RA55H3340M-101
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3340M RoHS Compliance, 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to

H8/330

Abstract: HD6433308CP HD6413308 HD6433308 HD6473308 induction power supply Hitachi DSA0044 49/H8/330/HD6473308
Contextual Info: HITACHI SINGLE-CHIP MICROCOMPUTER H8/330 HD6473308, HD6433308, HD6413308 HARDWARE MANUAL Preface The H8/330 is a high-performance single-chip microcomputer ideally suited for embedded control of industrial equipment. Its core is the H8/300 CPU: a high-speed processor. On-chip supporting

RA55H3340M-101

Abstract: RF MOSFET MODULE RA55H3340M 026A making
Contextual Info: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3340M RoHS Compliance, 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to