32N170AH1 Search Results

32N170AH1 Price and Stock

Filter by Manufacturer

Select Manufacturer


Littelfuse Inc IXGR32N170AH1 Disc IGBT PT-Low Frequency ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXGR32N170AH1	Bulk		8 Weeks	30	1 - 10 - 100 $49.72 1000 $49.72 10000 $49.72	Get Quote
IXYS Corporation IXGR32N170AH1 Transistor: IGBT; 1.7kV; 26A; 200W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXGR32N170AH1				300	1 - 10 - 100 - 1000 $30.06 10000 $30.06	Get Quote

32N170AH1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	32N170AH1 IXGH32N170A 405B2	PDF
Contextual Info: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A	Original	32N170AH1 PLUS247 0-18A	PDF
32N170AH1 Abstract: 32N17 PLUS247 6018A S3670 32n170 Contextual Info: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A	Original	32N170AH1 PLUS247 0-18A 32N170AH1 32N17 PLUS247 6018A S3670 32n170	PDF
IXGR32N170AH1 Abstract: ISOPLUS247 IXGH32N170A Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	32N170AH1 IXGH32N170A 405B2 IXGR32N170AH1 ISOPLUS247	PDF
Dh60 Contextual Info: Advance Technical Information IXGX 32N170AH1 High Voltage IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32	Original	32N170AH1 PLUS247 DH60-18A IXGH32N170A 405B2 Dh60	PDF
IXGX32N170AH1 Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	32N170AH1 ISOPLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170AH1 rg 710 diode ISOPLUS247	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF