IXGX32N170AH1 Search Results

IXGX32N170AH1 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXGX32N170AH1		IXYS	Very High Voltage IGBT	Original	PDF	531.74KB	2

IXGX32N170AH1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXGX32N170AH1 Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	32N170AH1 ISOPLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170AH1 rg 710 diode ISOPLUS247	PDF

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IXGX32N170AH1

Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A
Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient

Original

32N170AH1 ISOPLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170AH1 rg 710 diode ISOPLUS247

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