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    32N17 Search Results

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    Amphenol Corporation

    Amphenol Corporation MS17347R32N17S

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    Amphenol Corporation MS17343R32N17P

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    Amphenol Corporation MS17345C32N17S

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    Amphenol Corporation MS17345C32N17P

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    Amphenol Corporation QWLD05R32N17S

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    32N17 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DH60-18A

    Abstract: IXGH32N170A PLUS247
    Contextual Info: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


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    32n170h1plus247dh60-18aixgh32n170a+3728b1123b1065b1 PDF

    32n170

    Abstract: IXGT 32N170 IXGH 32N170
    Contextual Info: High Voltage IGBT IXGH 32N170 VCES IXGT 32N170 IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


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    32n170o-247o-268728b1+4123b1065b1ixgt 32n170ixgh 32n170 PDF

    Contextual Info: IXGH 32N170A IXGT 32N170A High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 21 A ICM TC = 25°C, 1 ms


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    32n170a405b2 PDF

    32N170

    Abstract: 32N17
    Contextual Info: Advance Technical Data High Voltage IGBT IXGH 32N170 VCES IXGT 32N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


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    32n170o-247o-268728b1+132n17 PDF

    Contextual Info: Advance Technical Information High Voltage IGBT IXGH 32N170A IXGT 32N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


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    32n170a728b1 PDF

    IXGX32N170H1

    Contextual Info: IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Preliminary Data Sheet\ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


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    32n170h1plus247dh60-18aixgh32n170a+2405b2ixgx32n170h1 PDF

    Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


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    32n170ah1ixgh32n170a405b2 PDF

    Contextual Info: IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    32n170h1ixgh32n170405b2 PDF

    Contextual Info: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A


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    32n170ah1plus2470-18a PDF

    Contextual Info: IXGV 32N170 High Voltage IGBT VCES IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


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    32n170plus220smdixgh32n170728b1 PDF

    32N170AH1

    Abstract: 32N17 PLUS247 6018A S3670 32n170
    Contextual Info: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A


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    32n170ah1plus2470-18a32n17+36018as367032n170 PDF

    Contextual Info: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


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    32n170h1plus247dh60-18aixgh32n170a+3728b1123b1065b1 PDF

    IXGR32N170AH1

    Abstract: ISOPLUS247 IXGH32N170A
    Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


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    32n170ah1ixgh32n170a405b2ixgr32n170ah1+1isoplus247 PDF

    Contextual Info: High Voltage IGBT IXGH 32N170 VCES IXGT 32N170 IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


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    32n170o-247o-268728b1+2123b1065b1 PDF

    Dh60

    Contextual Info: Advance Technical Information IXGX 32N170AH1 High Voltage IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


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    32n170ah1plus247dh60-18aixgh32n170a+2405b2dh60 PDF

    IXGX32N170AH1

    Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A
    Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


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    32n170ah1isoplus247dh60-18aixgh32n170a+3405b2ixgx32n170ah1rg 710 diode PDF

    Contextual Info: Advance Technical Information High Voltage IGBT IXGH 32N170A IXGT 32N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


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    32n170a728b1 PDF

    IXGR32N170H1

    Abstract: 32N170H1
    Contextual Info: IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    32n170h1isoplus247e153432ixgh32n170+2405b2ixgr32n170h1 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF