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    32N17 Search Results

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    32N17 Price and Stock

    IXYS Corporation

    IXYS Corporation IXGT32N170-TRL

    IGBTs IXGT32N170 TRL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXGT32N170-TRL 624
    • 1 $30.14
    • 10 $23.26
    • 100 $19.01
    • 1000 $19.00
    • 10000 $19.00
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    TTI IXGT32N170-TRL Reel 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $19.20
    • 10000 $19.00
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    IXYS Corporation IXGH32N170

    IGBTs 72 Amps 1700 V 3.3 V Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXGH32N170 420
    • 1 $22.16
    • 10 $14.65
    • 100 $14.65
    • 1000 $13.60
    • 10000 $13.60
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    TTI IXGH32N170 Tube 30
    • 1 -
    • 10 -
    • 100 $14.01
    • 1000 $14.01
    • 10000 $14.01
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    IXYS Corporation IXGH32N170A

    IGBTs VRY HI VOLT NPT IGBT 1700V, 72A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXGH32N170A 265
    • 1 $26.88
    • 10 $17.31
    • 100 $17.31
    • 1000 $16.44
    • 10000 $16.44
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    TTI IXGH32N170A Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $16.45
    • 10000 $16.45
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    IXYS Corporation IXGT32N170

    IGBTs 72 Amps 1700 V 3.3 V Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXGT32N170 256
    • 1 $30.54
    • 10 $23.02
    • 100 $23.02
    • 1000 $21.04
    • 10000 $21.04
    		Buy Now
    TTI IXGT32N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $19.03
    • 10000 $19.03
    		Buy Now

    IXYS Corporation IXGF32N170

    IGBTs 26 Amps 1700V 3.5 V Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXGF32N170 125
    • 1 $24.89
    • 10 $17.20
    • 100 $15.93
    • 1000 $15.93
    • 10000 $15.93
    		Buy Now
    TTI IXGF32N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $15.93
    • 10000 $15.93
    		Buy Now
    Find more 32N17 price and stock on Findchips.com

    32N17 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DH60-18A

    Abstract: IXGH32N170A PLUS247
    Contextual Info: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1 PLUS247 PDF

    32n170

    Abstract: IXGT 32N170 IXGH 32N170
    Contextual Info: High Voltage IGBT IXGH 32N170 VCES IXGT 32N170 IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		32N170 O-247 O-268 728B1 123B1 728B1 065B1 32N170 IXGT 32N170 IXGH 32N170 PDF

    Contextual Info: IXGH 32N170A IXGT 32N170A High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 21 A ICM TC = 25°C, 1 ms


    Original     		32N170A 405B2 PDF

    32N170

    Abstract: 32N17
    Contextual Info: Advance Technical Data High Voltage IGBT IXGH 32N170 VCES IXGT 32N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		32N170 O-247 O-268 728B1 32N17 PDF

    Contextual Info: Advance Technical Information High Voltage IGBT IXGH 32N170A IXGT 32N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


    Original     		32N170A 728B1 PDF

    IXGX32N170H1

    Contextual Info: IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) = 1700 V = 75 A = 3.3 V = 290 ns Preliminary Data Sheet\ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original     		32N170H1 PLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170H1 PDF

    Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		32N170AH1 IXGH32N170A 405B2 PDF

    Contextual Info: IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		32N170H1 IXGH32N170 405B2 PDF

    Contextual Info: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A


    Original     		32N170AH1 PLUS247 0-18A PDF

    Contextual Info: IXGV 32N170 High Voltage IGBT VCES IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C


    Original     		32N170 PLUS220SMD PLUS220SMD IXGH32N170 728B1 PDF

    32N170AH1

    Abstract: 32N17 PLUS247 6018A S3670 32n170
    Contextual Info: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A


    Original     		32N170AH1 PLUS247 0-18A 32N170AH1 32N17 PLUS247 6018A S3670 32n170 PDF

    Contextual Info: Advance Technical Information IXGX 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		32N170H1 PLUS247 DH60-18A IXGH32N170A 728B1 123B1 728B1 065B1 PDF

    IXGR32N170AH1

    Abstract: ISOPLUS247 IXGH32N170A
    Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		32N170AH1 IXGH32N170A 405B2 IXGR32N170AH1 ISOPLUS247 PDF

    Contextual Info: High Voltage IGBT IXGH 32N170 VCES IXGT 32N170 IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		32N170 O-247 O-268 728B1 123B1 728B1 065B1 32N170 PDF

    Dh60

    Contextual Info: Advance Technical Information IXGX 32N170AH1 High Voltage IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


    Original     		32N170AH1 PLUS247 DH60-18A IXGH32N170A 405B2 Dh60 PDF

    IXGX32N170AH1

    Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A
    Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		32N170AH1 ISOPLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170AH1 rg 710 diode ISOPLUS247 PDF

    Contextual Info: Advance Technical Information High Voltage IGBT IXGH 32N170A IXGT 32N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


    Original     		32N170A 728B1 PDF

    IXGR32N170H1

    Abstract: 32N170H1
    Contextual Info: IXGR 32N170H1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Electrically Isolated Tab = 1700 V = 38 A = 3.5 V = 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		32N170H1 ISOPLUS247 E153432 IXGH32N170 405B2 IXGR32N170H1 32N170H1 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF