Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    32N170A Search Results

    SF Impression Pixel

    32N170A Price and Stock

    IXYS Corporation

    IXYS Corporation IXGH32N170A

    IGBTs VRY HI VOLT NPT IGBT 1700V, 72A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXGH32N170A
    • 1 $25.31
    • 10 $20.45
    • 100 $20.45
    • 1000 $18.79
    • 10000 $18.79
    		Get Quote

    IXYS Corporation IXGT32N170A

    IGBTs 72 Amps 1700 V 5.0 V Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXGT32N170A
    • 1 -
    • 10 -
    • 100 -
    • 1000 $22.81
    • 10000 $22.81
    		Get Quote

    IXYS Corporation IXGR32N170AH1

    IGBTs 17 Amps 1700V 5.2 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXGR32N170AH1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $31.56
    • 10000 $31.56
    		Get Quote

    32N170A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXGH 32N170A IXGT 32N170A High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 21 A ICM TC = 25°C, 1 ms


    Original     		32N170A 405B2 PDF

    Contextual Info: Advance Technical Information High Voltage IGBT IXGH 32N170A IXGT 32N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


    Original     		32N170A 728B1 PDF

    Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		32N170AH1 IXGH32N170A 405B2 PDF

    Contextual Info: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A


    Original     		32N170AH1 PLUS247 0-18A PDF

    32N170AH1

    Abstract: 32N17 PLUS247 6018A S3670 32n170
    Contextual Info: IXGX 32N170AH1 High Voltage IGBT with Diode VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A


    Original     		32N170AH1 PLUS247 0-18A 32N170AH1 32N17 PLUS247 6018A S3670 32n170 PDF

    IXGR32N170AH1

    Abstract: ISOPLUS247 IXGH32N170A
    Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		32N170AH1 IXGH32N170A 405B2 IXGR32N170AH1 ISOPLUS247 PDF

    IXGH 32N170A

    Abstract: 32N170A IXGT32N170A
    Contextual Info: IXGH 32N170A IXGT 32N170A High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32 A IC90 TC = 90°C 21 A ICM TC = 25°C, 1 ms


    Original     		32N170A O-247 405B2 IXGH 32N170A 32N170A IXGT32N170A PDF

    Dh60

    Contextual Info: Advance Technical Information IXGX 32N170AH1 High Voltage IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


    Original     		32N170AH1 PLUS247 DH60-18A IXGH32N170A 405B2 Dh60 PDF

    IXGX32N170AH1

    Abstract: rg 710 diode DH60-18A ISOPLUS247 IXGH32N170A
    Contextual Info: Advance Technical Information IXGR 32N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original     		32N170AH1 ISOPLUS247 DH60-18A IXGH32N170A 405B2 IXGX32N170AH1 rg 710 diode ISOPLUS247 PDF

    Contextual Info: Advance Technical Information High Voltage IGBT IXGH 32N170A IXGT 32N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 32


    Original     		32N170A 728B1 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF