32MXB Search Results
32MXB Price and Stock
Vishay Intertechnologies GA0603H332MXBAC31GSMD Multilayer Ceramic Capacitor, 3300 pF, 100 V, 0603 [1608 Metric], ? 20%, X8R, GA_31G Series - Tape and Reel (Alt: GA0603H332MXBAC31G) |
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GA0603H332MXBAC31G | Tape & Reel | 9 Weeks | 8,000 |
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Vishay Intertechnologies GA1206Y332MXBAR31GGA1206Y332MXBAR31G - Tape and Reel (Alt: GA1206Y332MXBAR31G) |
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GA1206Y332MXBAR31G | Tape & Reel | 10 Weeks | 10,000 |
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Vishay Intertechnologies VJ0603Y332MXBPW1BCSMD Multilayer Ceramic Capacitor, 3300 pF, 100 V, 0603 [1608 Metric], ? 20%, X7R - Tape and Reel (Alt: VJ0603Y332MXBPW1BC) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VJ0603Y332MXBPW1BC | Tape & Reel | 18 Weeks | 15,000 |
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VJ0603Y332MXBPW1BC | 29 Weeks | 15,000 |
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Vishay Intertechnologies GA1206Y332MXBAT31GGA1206Y332MXBAT31G - Tape and Reel (Alt: GA1206Y332MXBAT31G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GA1206Y332MXBAT31G | Tape & Reel | 10 Weeks | 6,000 |
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Vishay Intertechnologies VJ0805Y332MXBPW1BCSMD Multilayer Ceramic Capacitor, 3300 pF, 100 V, 0805 [2012 Metric], ? 20%, X7R - Tape and Reel (Alt: VJ0805Y332MXBPW1BC) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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VJ0805Y332MXBPW1BC | Tape & Reel | 18 Weeks | 15,000 |
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VJ0805Y332MXBPW1BC | 29 Weeks | 15,000 |
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32MXB Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HYM72V64756T8 64Mx72, 32MxB based, PC100 DESCRIPTION The H Y M 72 V 6 4 75 6 T 8 H-series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eighteen 32M x8 bit Synchronous DRAM s in 54-pin TS O P II and 8-pin T S S O P 2K bit E E PR O M on a 168-pin glass-epoxy printed |
OCR Scan |
hym72v64756t864mx7232mxbpc100+2 | |
BAOCContextual Info: HY57V56820 L T 32MxB-bit, BK Ref., 4Banks, 3.3V DESCRIPTION The HY57V56820 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V56820 is organized as 4 banks of 8,388,608x8. |
OCR Scan |
hy57v5682032mxb-bit456bit608x8+3 | |
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Contextual Info: HYM72V32636T8 32Mx64, 32Mx8 based, PC 133 DESCRIPTION The H Y M 72V 32636T8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits CM O S Synchronous DRAM s in 400mi! 54pin TS O P-II package, one 2Kbit EEPR O M in Spin TS S O P package on a 168pin glass-epoxy printed |
OCR Scan |
hym72v32636t832mx6432mx832636t8+6 | |
ka 2843Contextual Info: HY57V56820A L T 32Mx6-bit, 8 K R et, 4Banks, 3.3V DESCRIPTION The HY57V56820A is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. The HY57V56820A is organized as 4banks of 8,388,608x8. |
OCR Scan |
hy57v56820a32mx6-bit456bit608x8+3 | |
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Contextual Info: HYM72V64C736AT8 64Mx72, 32Mx8 based, PC133 DESCRIPTION The HYM72V64C736AT8 H-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eigh teen 32Mx8 bit Synchronous DRAMs in 54-pin TSOPII, two 48-pin SOP Register Buffers, one 24-pin SOP PLL and 8-pin |
OCR Scan |
hym72v64c736at864mx7232mx8pc133+4 | |
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Contextual Info: HYM72V32C756T8 32Ux72, 32Mx8 based, PC100 DESCRIPTION The HYM72V32C756T8 H-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of nine 32Mx8 bit Synchronous DRAMs in 54-pin TSOPII, two 48-pin SOP Register Buffers, one 24-pin SOP PLL and 8-pin |
OCR Scan |
hym72v32c756t832ux7232mx8pc100+4 | |
82IIContextual Info: HYM72V32636AT8 32Mx64, 32Mx8 based, PC133 DESCRIPTION The HYM72V32636AT8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of eight 32Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 16Spin glass-epoxy printed |
OCR Scan |
hym72v32636at832mx6432mx8pc133+6 | |
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Contextual Info: HYM72V64736T8 , 64Mx72, 32Mx8 based PC133 DESCRIPTION The Hyundai H Y M 72V64736T8 Series are 64M x72bits EC C Synchronous DRAM M odules. T he m odules are com posed o f eighteen 32M x8bits CM O S S ynchronous DR AM s in 400m il 54pin TS O P-II package, one 2K bit EEPR O M in 8pin TS S O P package on a 168pin |
OCR Scan |
hym72v64736t864mx7232mx8pc133+5 | |
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Contextual Info: HYM72V32C756AT8 32Mx72, 32Mx8 based, PC100 DESCRIPTION The H Y M 72V 32C 756A T 8 H-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of nine 32M x8 bit Synchronous DRAMs in 54-pin TS O P II, two 48-pin S O P Register Buffers, one 24-pin S O P PLL and 8-pin |
OCR Scan |
hym72v32c756at832mx7232mx8pc100+5 | |
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Contextual Info: HYM72V64656T8 64Mx64, 32Mx8 based, PC100 DESCRIPTION The H Y M 72 V 6 4 65 6 T 8 H-series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of sixteen 32M x8 bit Synchronous DRAMs In 54-pin TS O P II and 8-pin T S S O P 2K bit E E P R O M on a 168-pin glass-epoxy printed |
OCR Scan |
hym72v64656t864mx6432mx8pc100+3 | |
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Contextual Info: HYM72V32756T8 32Mx72, 32Mx8 based, PC100 DESCRIPTION T he H Y M 72V32756T8 Series are 32M x72bits Synchronous DRAM M odules. The m odules are com posed o f nine 32M x6bits CM OS S ynchronous DRAM s in 400m il 54pin TSOP-II package, one 2K bit EEPR O M in 8pin TS S O P package on a 168pin glass-epoxy printed |
OCR Scan |
hym72v32756t832mx7232mx8pc100+5 | |
MAX 7910Contextual Info: P EN SE - P A C M i c R o s y s i e M /H - D m sm s ^ High Density Memory Module DESCRIPTION: S c î l o s Z 1 2 8 M e g a b it C M O S d r a m PIN-OUT DIAGRAM The/U -D ensus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family |
OCR Scan |
max 7910 |