327M Search Results

Contextual Info: 327MS8G / 327MS8GE v03.0705 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: Gain: 21 dB • Wireless Local Loop 45% PAE

VU meter circuit

Abstract: BA682A 20 led VU meter "LED BAR" driver ic
Contextual Info: Audio ICs LED level meter driver, 12-point, VU scale, dot or bar display BA682A The BA682A is a monolithic IC for LED level m eter applications. The display level range is 13mVms to 327mVms typ. , the OdB level is 130rnVrm s (typ.) and the V U display is -20d B to

Contextual Info: 327MS8G / 327MS8GE v06.1209 11 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features The 327MS8G E is ideal for: High Gain: 21 dB • Wireless Local Loop Saturated Power: +30 dBm @ 45% PAE • WiMAX & Fixed Wireless Output P1dB: +27 dBm

H327

Abstract: DC 0509 marking gain stage GaAs MMIC AMPLIFIER 327MS8GE HMC327MS8G HMC327MS8GE 250 watt amplifier
Contextual Info: 327MS8G / 327MS8GE v06.1209 11 GaAs InGaP HBT MMIC 1/2 WATT POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features The 327MS8G E is ideal for: High Gain: 21 dB • Wireless Local Loop Saturated Power: +30 dBm @ 45% PAE • WiMAX & Fixed Wireless Output P1dB: +27 dBm

MAX326

Abstract: MAX326M MAX327 MAX327M
Contextual Info: - 252 MAX326/MAX327 - • « S W ÍS tt SPST C M O S 7 t P ^ '- X " f V + = + 1 5 V , V = — 15V , m G N D = 0 V, iê 4k =f~ ( <7 r •■/ F X - O O ' ÿ ) T„ = 25 t ) M A X 326M , M A X 327M ft fi 'h m m ^DS (ON) VIN= 2 .4V (M A X 327) Vq = + 1 0 V , / s = 1 0 0 M

Bar Display Driver LED

Abstract: ba682a circuit diagram of LED display LED VU METER pin diagram of LED vu meter Display Driver DOT BAR bar dot led driver vu meter using led VU METER led display circuit diagram
Contextual Info: Audio ICs LED level meter driver, 12–point, VU scale, dot or bar display BA682A The BA682A is a monolithic IC for LED level meter applications. The display level range is 13mVrms to 327mVrms Typ. , the 0dB level is 130mVrms (Typ.) and the VU display is -20dB to

HMC327MS8GE

Abstract: 327MS8GE H327 HMC327MS8G marking gain stage GaAs MMIC AMPLIFIER
Contextual Info: 327MS8G / 327MS8GE v04.0607 AMPLIFIERS - SMT 5 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: Gain: 21 dB • Wireless Local Loop 45% PAE

Contextual Info: 327MS8G / 327MS8GE v03.0705 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: Gain: 21 dB • Wireless Local Loop 45% PAE

Contextual Info: 327MS8G / 327MS8GE v03.0705 AMPLIFIERS - SMT 8 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: Gain: 21 dB • Wireless Local Loop 45% PAE

DC 0509

Abstract: 327MS8GE H327 HMC327MS8G HMC327MS8GE
Contextual Info: 327MS8G / 327MS8GE v05.0509 11 GaAs InGaP HBT MMIC 1/2 W POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: High Gain: 21 dB • Wireless Local Loop Output P1dB: +27 dBm

Contextual Info: 327MS8G / 327MS8GE v04.0607 6 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3 - 4 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: Gain: 21 dB • Wireless Local Loop 45% PAE Saturated Power: +30 dBm

Contextual Info: 327MS8G / 327MS8GE v03.0705 AMPLIFIERS - SMT 5 GaAs InGaP HBT MMIC POWER AMPLIFIER, 3.0 - 4.0 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.6 GHz applications: Gain: 21 dB • Wireless Local Loop 45% PAE

Contextual Info: Data Sheet MicroRAM TM Output Ripple Attenuation Module Features • RoHS Compliant with F or G pin option • >40 dB ripple attenuation from 60 Hz to 1 MHz • Integrated OR’ing diode supports N+1 redundancy • Significantly improves load transient response

MPSA65

Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*

Contextual Info: 16-Bit Long-Reach Video Automotive Grade SERDES ISL76322 Features The ISL76322 is a serializer/deserializer of LVCMOS parallel video data. The video data presented to the serializer on the parallel LVCMOS bus is serialized into a high-speed differential signal. This differential signal is converted back to parallel video

XAPP1014

Abstract: smpte 424m to smpte 274m 3G-SDI serializer XAPP224 DATA RECOVERY 425M SMPTE-305M PCIe BT.656 ML571 vhdl code for multiplexing Tables in dvb-t SONY service manual circuits
Contextual Info: Audio/Video Connectivity Solutions for Virtex-5 FPGAs Reference Designs for the Broadcast Industry: Volume 2 XAPP1014 v1.2 November 9, 2009 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development

FI-X30SSL-HF

Abstract: wy 636 transistor lg philips LCD panel 17" Connector 30pin lcd lg FI-X30ssl LC230WX3 LG 32" TV lcd power supply S14B-PH-SM3 LG LCD POWER SUPPLY connector 30 pins LCD LG Philips
Contextual Info: LC230WX3 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL Preliminary Specification ( ● ) Final Specification Title BUYER 23.0” WXGA TFT LCD SUPPLIER General MODEL LG.Philips LCD Co., Ltd. *MODEL LC230WX3 SUFFIX SLA1 *When you obtain standard approval,

ASI4U Application Notes

Abstract: asi bus SAP5 Evaluation Board 2.0 1N4001 1N4148 BZV55C39 SSOP28 TEMD5000 zmd programmer ZMD cross reference
Contextual Info: ASI4U Universal Actuator-Sensor Interface IC Datasheet Features • • • • • • • • • • • Description ASI4U is a monolithic CMOS integrated circuit certified for AS-i Actuator Sensor Interface networks. AS-i networks are used for industrial

DSZ-44SBF-S

Abstract: DSZ-44 DSZ-44PF spare lamp bulb
Contextual Info: Model DSZ-44 series offers superior quality optics and reliable mechanical components. This exceptional quality allows users to efficiently perform tasks and maintain high productivity. A wide variety of stands and illuminators are available to suite many different applications. The DSZ-44 series features a zoom

Contextual Info: MicroRam Output Ripple Attenuation Module Features • RoHS Compliant with F or G pin option • >40 dB ripple attenuation from 1.1 KHz to 1 MHz • >40 dB ripple attenuation from 100 Hz to 1.1 KHz with additional component • Integrated OR’ing diode supports

2d2 smd transistor

Abstract: smd transistor 2d7 SECME Transistor SMD 2d6 .33uf, 16v capacitor smd TRANSISTOR 1D5 25 pin d-type female oen make 74HC00DB 3H DIODE smd TDA8798
Contextual Info: APPLICATION NOTE - TDA8798HL DUAL 8-BIT A/D CONVERTER WITH DPGA DEMONSTRATION BOARD AN/99055 Philips Semiconductors - TDA8798HL - Application Note AN99055 DEMONSTRATION BOARD APPLICATION NOTE - TDA8798HL DUAL 8-BIT A/D CONVERTER WITH DPGA DEMONSTRATION BOARD

transistor 2N5461

Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.

2N5306

Abstract: F63TNR MPSA14 PN2222N CBVK741B019
Contextual Info: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

rf transistor mark code H1

Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
Contextual Info: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for