32768WORD Search Results

Hitachi DSA00171

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

CXK5V8257BM

Abstract: CXK5V8257BTM CXK5V8257BYM
Contextual Info: CXK5V8257BTM/BYM/BM -70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits.

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

AWPn

Abstract: JG30 CXK58257B
Contextual Info: SONY CXK58257BTM/BYM/BP/BM -55LL/70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM/BP/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A polysilicon TFT cell technology realized extermely

Hitachi DSA002713

Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÕs organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.

Contextual Info: Ordering number : ENN6303 CMOS IC LC35V256EM, ET-70W 256K 32K words x 8 bits SRAM Control pins: OE and CE Overview Package Dimensions The LC35V256EM-70W and LC35V256ET-70W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices

692B

Abstract: HN58S256A HN58S256AT HN58S256AT-15 HN58S256AT-20 Hitachi DSA00358
Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word × 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

Contextual Info: HN58S256A Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-692 Z Preliminary Rev. 0.0 Dec. 3, 1996 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry

Contextual Info: Ordering number : ENN6304 CMOS IC LC35W256EM, ET-10W 256K 32K words x 8 bits SRAM Control pins: OE and CE Overview Package Dimensions The LC35W256EM-10W and LC35W256ET-10W are asynchronous silicon-gate CMOS SRAMs with a 32768word by 8-bit structure. These are full-CMOS devices

CXK58257bp

Abstract: cxk58257bym CXK58257b
Contextual Info: SONY CXK58257BTM/BYM/BP/BM - 5 5 L L /7 0 L L /1 0 L L 32768-word x 8-bit High Speed CMOS Static RAM Description The CXK58257BTM/BYM/BP/BM is 262,144 bits high speed CMOS static RAM organized as 32768words by 8 bits. A poiysilicon TFT cell technology realized extermely

Contextual Info: HN58S256A Series 256 k EEPROM 32-kword x 8-bit HITACHI ADE-203-692B (Z) Rev. 2.0 Nov. 1997 Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROMÔs organized as 32768word x 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology.

HN27C256AFP-12T

Abstract: HN27C256AFP-15T HN27C256AP-12 HN27C256AP-15
Contextual Info: HN27C256AP/AFP Series 32768-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C256AP/AFP is a 32768-word by 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C256AP/AFP are in the “1” State Output High . Data is introduced by

1822-HEX

Abstract: HM71V832 HM71V832FP-15 HM71V832T-15 "Ferroelectric RAM" Hitachi 32k static RAM Hitachi DSA00198 Hitachi DSA00198182
Contextual Info: HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM Preliminary Rev. 0.0 Nov. 20, 1995 Description The HM71V832 is a ferroelectric RAM, or FARM memory, organized as 32k-word x 8-bit. FRAM memory products from Hitachi combine the read/write characteristics of semiconductor RAM with

Contextual Info: HN27256P Series 32768-word x 8-bit One Time Electrically Programmable ROM The HN27256P is a 32768-word by 8-bit one time electrically pro­ grammable ROM. Initially, all bits of the HN27256P are In the " 1 " state Output High . Data is introduced by selectively programming

Contextual Info: MITSUBISHI LSIs M5M5255BP, BFP, BKP-70,-85,-10,-12.-70L, -85L,- 10L,- 12L,-70LL,-85LL,- 10LL,-12LL 2 6 2 1 4 4 -B IT 3 2 7 6 8 -W 0 R D BY 8-BIT CM O S STATIC RAM DESCRIPTION The M5M5255BP, BFP, BKP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabri­

Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) HITACHI ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized

62256LP-12

Abstract: AKM62256-10 62256FP-12T 62256P
Contextual Info: AK M 62256 Series 32768-word x 8-bit High Speed CMOS Static RAM • • FEATURES High Speed: Fast Access Time 85/100/120/150ns max. • Low Power Standby and Low Power Operation; • Standby: 200^tW {t y p ) /1 0/uW (typ) (L-version), Operation: 40mW (typ.) (f = 1MHz)

N15N

Contextual Info: ADE-203-412 Z HM71V832 Series 32768-word x 8-bit Nonvolatile Ferroelectric RAM Preliminary Rev. 0.0 Nov. 20,1995 HITACHI T h e H M 71V 832 is a fe rro e le c tric RAM , or FRAM memory, organized as 32k-word x 8-bit FRAM® memory products from Hitachi combine

70513

Contextual Info: Ordering number : ENN*7051 CMOS IC LC35W256GM, GT-70U 256K 32768-words x 8-bit SRAM with OE and CE control pins Preliminary Overview Package Dimensions The LC35W256GM-70U and LC35W256GT-70U are 32768-words by 8-bit asynchronous silicon gate low supply voltage CMOS SRAMs. These devices adopt a

28 pin plastic dip hitachi dimension

Contextual Info: HN58C256A Series HN58C257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58C257A) HITACHI ADE-203-410D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58C256A and HN58C257A are electrically erasable and programmable ROMs organized

Contextual Info: HM62D3232 Series 32768-word x 32-bit Synchronous Fast Static RAM with Burst Counter and Pipelined Data Output HITACHI ADE-203-491A Z Rev. 1.0 Jun. 24, 1996 Features • • • • • • • • • • • • • • Single 3.3 Y power supply (LYTTL)

Contextual Info: HN58V256A Series HN58V257A Series 256k EEPROM 32-kword x 8-bit Ready/Busy and RES function (HN58V257A) HITACHI ADE-203-357D (Z) Rev. 4.0 Oct. 24, 1997 Description The Hitachi HN58V256A and HN58V257A are electrically erasable and programmable ROMs organized

TSOP028-P-0000-B

Contextual Info: CXK58257ATM/AYM -70L/10L -70LL/10LL 32768-word x 8-bit High Speed CMOS Static RAM Block Diagram Description CXK58257ATM/AYM is a 256K-bit, 32,768-word-by8-bit, CMOS static RAM. It is suitable for portable and battery back-up systems which require extremely small packages and low

HN58V257T-35

Abstract: Hitachi DSA00171
Contextual Info: ADE-203-053F Z HN58V257 Series 32768-word x 8-bit Electrically Erasable and Programmable CMOS ROM Rev. 6.0 May. 25, 1995 The Hitachi HN58V257 is a electically erasable and programmable ROM organized as 32768-word × 8-bit. It realizes high speed, low power