323D Search Results

AMD marking CODE flash AM29DL323DB

Abstract: AM29DL32XD 56-Pin S29JL032 DL322 DL323 DL324 S29JL032H S29PL032J
Contextual Info: Am29DL322D/323D/324D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information.

MVL-323DRD

Abstract: MVL-323GD MVL-323HRD MVL-323YD
Contextual Info: Unity Opto Technology Co., Ltd. MVL-323GD MVL-323YD MVL-323HRD MVL-323DRD MVL-323URD 04/30/2002 Description Package Dimensions Unite: mm inches The MVL-323xxD series package are T-1(φ3mm) standard double flange color transparent plastic lens package. The

D028

Abstract: simm-30 timing EDI8F3265C25MZI t1is 64KX32 D010 D021 I8F3265C25M jedec 64-pin simm
Contextual Info: ELECTRONIC DESIGNS INC 51E 1 • 323D11M Ü001058 Sfl7 H E L D EDI8F3265C T -V i -23-/y ^ E D*slD I Bectrofìlc gra Inc." High Speed Two Megabit SRAM Module 64KX32 Static RAM CMOS, High Speed Module Features TheEDI8F3265Cisahighspeed2megabit Static RAM module organized as 64Kx32. This module is constructed

MVL-323DRD

Abstract: MVL-323GD MVL-323HRD MVL-323YD
Contextual Info: Unity Opto Technology Co., Ltd. MVL-323GD MVL-323YD MVL-323HRD MVL-323DRD MVL-323URD Description Package Dimensions φ3.80±0.30 .150±.012 The MVL-323xxD series package are T-1 (φ3mm) standard flange color transparent plastic lens package. The Hi-EFF red

Contextual Info: NOTICE OF VALIDATION INCH-POUND MIL-M-38510/323D NOTICE 2 03-Apr-2013 DETAIL SPECIFICATION Microcircuits, Digital, Bipolar, Low-Power Schottky TTL, Quadruple Bus Buffer Gates with Three State Outputs, Monolithic Silicon MIL-M-38510/323D, dated 01-Jul-2008, remains inactive for new

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS ^/uhíha 2048 W O R D T M M 323D T M M 3 2 3 D -1 8 B IT E P R O M X N CH AN N E L S ILIC O N STACKED GATE MOS. DESCRIPTION The T M M 3 2 3 D e ra sa b le and m e m o ry . is a 2 0 4 8 w o r d x 8 b it u lt r a v io le t e le c t r ic a lly

AM29DL32XD

Abstract: d323db 324D S29JL032 DL322 DL323 DL324 S29JL032H S29PL032J AM29DL322DB120
Contextual Info: Am29DL322D/323D/324D Data Sheet For new designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information. For new designs involving Fine-pitch BGA FBGA packages, S29PL032J supersedes Am29DL32xD and is the

GR 733

Abstract: SMD resistors 1206
Contextual Info: TE X AS INS TRUM E NTS - ADVANCE INFO R MAT ION Stellaris LM4F211H5QR Microcontroller D ATA SHE E T D S -LM4F 211H5 Q R- 1 4 0 0 7 . 2 6 0 1 S P M S 323D C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright Copyright © 2007-2013 Texas Instruments Incorporated All rights reserved. Stellaris and StellarisWare® are registered trademarks of Texas Instruments

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS 323D TMM 323D- 1 ¿/oÀhìha 2048 WORD x 8 BIT EPROM N C H A N N E L S I L IC O N S T A C K E D G A T E M O S. DESCRIPTION The T M M 3 23D erasable and m e m o ry . is a 2 0 4 8 w o rd x 8 b it u ltr a v io le t e le c tr ic a lly

HD74LV125A

Abstract: HD74LV1G125A HD74LV1G125ACME HD74LV1G125AVSE
Contextual Info: HD74LV1G125A Bus Buffer Gate with 3–state Output REJ03D0071–0600Z Previous ADE-205-323D (Z Rev.6.00 Sep.01.2003 Description The HD74LV1G125A has a bus buffer gate with 3–state output in a 5 pin package. Output is disabled when the associated output enable (OE) input is high. To ensure the high impedance state during power up

Contextual Info: PRELIMINARY Am29DL322D/323D/324D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

Contextual Info: PRELIMINARY Am29DL322D/323D/324D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

CSD-322D

Abstract: CSD-323D
Contextual Info: CHINA SEMICONDUCTOR CORPORATION Feature § § § § 0.3 inch 7.62mm Digit height. Case mold type Excellent character appearance Wide viewing angle DUAL DIGIT DISPLAY CSD-322D/323D Model no. § Description § § Mechanical Dimension Typical Internal Equivalent Circuit

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS ¿fíühiba TM M 323DI 2 2 3 DI 1 20 4 8 W O R D x 8 B IT EPRO M N C H A N N E L S IL IC O N S T A C K E D G A T E M O S. “ p |^ | |^ | ” DESCRIPTION o n ly T h e T M M 3 2 3 D I is a 2 0 4 8 w o r d x 8 b it u lt r a v io le t

TMM323D-1

Abstract: TMM323D
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS TM M 323D TM M 323D- 1 2048 WORD X 8 BIT EPROM H C H A N N E L S IL IC O N S T A C K E D G A T E M O S. DESCRIPTION The TM M 323D e r a s a b le and m e m o ry. is a 2 0 4 8 w o r d x 8 b it u lt r a v io le t e l e c t r ic a lly

AMD marking CODE flash AM29DL323DB

Contextual Info: PRELIMINARY Am29DL322D/323D/324D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while

CDFP2-F14

Abstract: MARKING CODE 3Y 54LS125A GDFP1-F14 whs 73 3704C
Contextual Info: INCH-POUND MIL-M-38510/323D 14 July 2003 _ SUPERSEDING MIL-M-38510/323C 7 August 1987 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY TTL, QUADRUPLE BUS BUFFER GATES WITH THREE STATE OUTPUTS, MONOLITHIC SILICON Inactive for new design after 18 April 1997.

d323db90v

Abstract: AM29DL32XD DL322 DL323 DL324
Contextual Info: Am29DL322D/323D/324D Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG

IVI323D

Abstract: TMM323DI TMM323DI-1 TMM323D JCS18
Contextual Info: • TOSHIBA MOS MEMORY PRODUCTS TM M 323DI T IS/IIVI3 2 3 D I 1 2048 W O R D x 8 B IT E P R O M N C H A N N f L S IL IC O N S T A C K E D G A T E M O S. “ DESCRIPTION o n ly T h e T M M 3 2 3 D I is a 204 8 w o rd x 8 b it u ltra vio let erasable and m em o ry.

EDI8F8257C70BPC

Contextual Info: ^EDI ELECTRONIC DESIGNS INC SIE D • 323D114 B*cfronlc D*ägn$ Ine. ■ ODOIO LL bS3 BELD EDI8F8257C T-W-23-/V Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8257C is a 2 megabit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­

uA 726 HC

Abstract: IC00030
Contextual Info: 323 011 4 ELECTRONIC DESIGNS INC_ 71C 0 0026 7 ELE CTR ON IC DESIGNS INC 71 D e | 323D114 GDDGQBt. 7 | Electronic Designs Inc. EDH5832-30/35/45 32K x 8 EEPROM T he EDH5832 is an e le ctrica lly erasable, p ro gra m m a ble rea d-o nly m e m o ry EEPRO M w ith ea se -o f-u se features. EEPRO M can be m od ifie d using sim p le T T L level

0Q8-DQ11

Abstract: doso D012 D015 D024 DO30 EDI8M3264C C0013
Contextual Info: 30E D ELECTRON IC DESIGNS INC • 323D114 GOQGhTS b ■ EDI8M3264C m o i EUctronlo Dytlgnt In c .- High Speed Two Megabit SRAM Module DiFûilÂ?D i 64Kx32 Static RAM CMOS, High Speed Module T-M -Z3-N Features The EDI8M3264C is a high speed 2 megabit Static

Contextual Info: IR Emitter and Detector Product Data Sheet LTR-323DB Spec No.: DS-50-94-0022 Effective Date: 06/10/2010 Revision: C LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

Contextual Info: PRELIMINARY Am29DL322D/323D/324D 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while