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    320N20NS Search Results

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    Infineon Technologies AG BSC320N20NS3 G

    MOSFETs N-Ch 200V 36A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC320N20NS3 G 2,130
    • 1 $3.65
    • 10 $2.37
    • 100 $1.66
    • 1000 $1.29
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    Chip 1 Exchange BSC320N20NS3 G 6,487
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    Maritex BSC320N20NS3 G 69 1
    • 1 $1.82
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    • 1000 $0.93
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    Win Source Electronics BSC320N20NS3 G 47,730
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    • 100 $1.34
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    Infineon Technologies AG BSC320N20NS3GATMA1

    MOSFETs N-Ch 200V 36A TDSON-8 OptiMOS 3
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    Mouser Electronics BSC320N20NS3GATMA1
    • 1 $3.33
    • 10 $2.15
    • 100 $1.59
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    Newark () BSC320N20NS3GATMA1 Tape & Reel 55,858 100
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    BSC320N20NS3GATMA1 Cut Tape 55,858 1
    • 1 $3.22
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    BSC320N20NS3GATMA1 Tape & Reel 5,000
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    Bristol Electronics BSC320N20NS3GATMA1 400
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    Rochester Electronics BSC320N20NS3GATMA1 25,858 1
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    TME BSC320N20NS3GATMA1 5,000
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    Ameya Holding Limited BSC320N20NS3GATMA1 3,125
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    EBV Elektronik BSC320N20NS3GATMA1 10,000 53 Weeks 5,000
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    Win Source Electronics BSC320N20NS3GATMA1 44,640
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    • 100 $1.34
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    Infineon Technologies AG BSC320N20NS3G

    Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP T/R
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    Bristol Electronics BSC320N20NS3G 84 1
    • 1 $2.40
    • 10 $1.80
    • 100 $1.49
    • 1000 $1.49
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    Infineon Technologies AG BSC320N20NS3GATM

    N-Channel MOSFET, 200V, 32A, TO-263-3, for high-speed switching and power management applications
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    ComSIT USA BSC320N20NS3GATM 263
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    VBsemi Electronics Co Ltd BSC320N20NS3 G-VB

    MOSFETs; BSC320N20NS3 G-VB; VBSEMI
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    Maritex BSC320N20NS3 G-VB 10 5
    • 1 $4.90
    • 10 $1.57
    • 100 $1.57
    • 1000 $1.57
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    320N20NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    640V

    Contextual Info: 320N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max 32 mΩ ID 36 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant


    Original
    BSC320N20NS3 IEC61249-2-21 320N20NS 640V PDF

    320n20ns

    Abstract: BSC320N20NS3 G IEC61249-2-21 JESD22 BSC320N20NS3 d36 marking
    Contextual Info: 320N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max 32 mΩ ID 36 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant


    Original
    BSC320N20NS3 IEC61249-2-21 320N20NS 320n20ns BSC320N20NS3 G IEC61249-2-21 JESD22 d36 marking PDF

    Contextual Info: 320N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max 32 mΩ ID 36 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant


    Original
    BSC320N20NS3 IEC61249-2-21 320N20NS PDF