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    320N20NS Search Results

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    Infineon Technologies AG BSC320N20NS3GATMA1

    MOSFET N-CH 200V 36A TDSON-8
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    DigiKey () BSC320N20NS3GATMA1 Cut Tape 20,590 1
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    BSC320N20NS3GATMA1 Digi-Reel 20,590 1
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    BSC320N20NS3GATMA1 Tape & Reel 20,000 5,000
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    Avnet Americas () BSC320N20NS3GATMA1 Ammo Pack 1
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    BSC320N20NS3GATMA1 Tape & Reel 26 Weeks 5,000
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    Mouser Electronics () BSC320N20NS3GATMA1 4,980
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    BSC320N20NS3GATMA1 3,259
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    Newark () BSC320N20NS3GATMA1 Cut Tape 1,599 1
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    BSC320N20NS3GATMA1 Tape & Reel 5,000
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    Bristol Electronics BSC320N20NS3GATMA1 400
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    Rochester Electronics BSC320N20NS3GATMA1 31,258 1
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    Ameya Holding Limited BSC320N20NS3GATMA1 3,127
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    Chip One Stop BSC320N20NS3GATMA1 Cut Tape 1,908 0 Weeks, 1 Days 1
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    EBV Elektronik BSC320N20NS3GATMA1 10,000 27 Weeks 5,000
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    Win Source Electronics BSC320N20NS3GATMA1 22,030
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    Infineon Technologies AG BSC320N20NS3 G

    MOSFETs N-Ch 200V 36A TDSON-8 OptiMOS 3
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    Mouser Electronics () BSC320N20NS3 G 8,057
    • 1 $3.25
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    BSC320N20NS3 G 7,953
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    Chip 1 Exchange BSC320N20NS3 G 6,487
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    Win Source Electronics BSC320N20NS3 G 23,702
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    Infineon Technologies AG BSC320N20NS3G

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    Bristol Electronics BSC320N20NS3G 84 3
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    INFINEON TECHNOLGIES CORP BSC320N20NS3G

    AVAILABLE EU
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    ComSIT USA BSC320N20NS3G 2,721
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    Infineon Technologies AG BSC320N20NS3GATM

    N-Channel MOSFET, 200V, 32A, TO-263-3, for high-speed switching and power management applications
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    ComSIT USA BSC320N20NS3GATM 263
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    320N20NS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    640V

    Contextual Info: 320N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max 32 mΩ ID 36 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant


    Original     		BSC320N20NS3 IEC61249-2-21 320N20NS 640V PDF

    320n20ns

    Abstract: BSC320N20NS3 G IEC61249-2-21 JESD22 BSC320N20NS3 d36 marking
    Contextual Info: 320N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max 32 mΩ ID 36 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant


    Original     		BSC320N20NS3 IEC61249-2-21 320N20NS 320n20ns BSC320N20NS3 G IEC61249-2-21 JESD22 d36 marking PDF

    Contextual Info: 320N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max 32 mΩ ID 36 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant


    Original     		BSC320N20NS3 IEC61249-2-21 320N20NS PDF