320N20N Search Results
320N20N Price and Stock
Infineon Technologies AG IPD320N20N3GATMA1MOSFET N-CH 200V 34A TO252-3 |
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IPD320N20N3GATMA1 | Digi-Reel | 15,978 | 1 |
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IPD320N20N3GATMA1 | Reel | 5,000 | 16 Weeks | 2,500 |
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IPD320N20N3GATMA1 | 3,028 |
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IPD320N20N3GATMA1 | Bulk | 3,265 | 1 |
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IPD320N20N3GATMA1 | 10,382 | 1 |
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IPD320N20N3GATMA1 | 10,000 | 2,500 |
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IPD320N20N3GATMA1 | 1,044 |
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IPD320N20N3GATMA1 | Cut Tape | 7,320 | 0 Weeks, 1 Days | 1 |
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Infineon Technologies AG IPB320N20N3GATMA1MOSFET N-CH 200V 34A D2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB320N20N3GATMA1 | Cut Tape | 6,775 | 1 |
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IPB320N20N3GATMA1 | Reel | 1,000 | 16 Weeks | 1,000 |
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IPB320N20N3GATMA1 | 4,290 |
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IPB320N20N3GATMA1 | Bulk | 16,473 | 1 |
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IPB320N20N3GATMA1 | 1 |
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IPB320N20N3GATMA1 | 436 |
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IPB320N20N3GATMA1 | Cut Tape | 3,995 | 0 Weeks, 1 Days | 1 |
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IPB320N20N3GATMA1 | 48,500 |
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IPB320N20N3GATMA1 | 42,670 |
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Infineon Technologies AG IPP320N20N3GXKSA1MOSFET N-CH 200V 34A TO220-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPP320N20N3GXKSA1 | Tube | 6,640 | 1 |
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IPP320N20N3GXKSA1 | Tube | 2,376 | 16 Weeks | 1 |
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IPP320N20N3GXKSA1 | 5,580 |
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IPP320N20N3GXKSA1 | Bulk | 212 | 1 |
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IPP320N20N3GXKSA1 | 29 | 1 |
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IPP320N20N3GXKSA1 | Tube | 3,459 | 0 Weeks, 1 Days | 1 |
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IPP320N20N3GXKSA1 | 72,500 |
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IPP320N20N3GXKSA1 | 44,500 |
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Infineon Technologies AG IPD320N20N3GBTMA1MOSFET N-CH 200V 34A TO252-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPD320N20N3GBTMA1 | Reel |
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IPD320N20N3GBTMA1 | 479 |
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Infineon Technologies AG IPI320N20N3GAKSA1MOSFET N-CH 200V 34A TO262-3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI320N20N3GAKSA1 | Tube |
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IPI320N20N3GAKSA1 | 656 | 1 |
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IPI320N20N3GAKSA1 | 1 |
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320N20N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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320N20N
Abstract: IEC61249-2-21 IPB320N20N3 JESD22 PG-TO220-3 F34A IPP320N20N3 G
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IPB320N20N3 IPP320N20N3 IPI320N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 320N20N IEC61249-2-21 JESD22 PG-TO220-3 F34A IPP320N20N3 G | |
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Contextual Info: 320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 200 V RDS(on),max 32 mW ID 34 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant |
Original |
IPD320N20N3 IEC61249-2-21 PG-TO252-3 320N20N | |
640VContextual Info: 320N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max 32 mΩ ID 36 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant |
Original |
BSC320N20NS3 IEC61249-2-21 320N20NS 640V | |
ua900Contextual Info: 320N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max 32 mW ID 34 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant |
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IPD320N20N3 IEC61249-2-21 PG-TO252-3 320N20N ua900 | |
320n20ns
Abstract: BSC320N20NS3 G IEC61249-2-21 JESD22 BSC320N20NS3 d36 marking
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BSC320N20NS3 IEC61249-2-21 320N20NS 320n20ns BSC320N20NS3 G IEC61249-2-21 JESD22 d36 marking | |
IPP320N20N
Abstract: IPP320N20N3 G
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IPB320N20N3 IPP320N20N3 IPI320N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 IPP320N20N IPP320N20N3 G | |
320N20N
Abstract: IPP320N20N3 G
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Original |
IPB320N20N3 IPP320N20N3 IPI320N20N3 IEC61249-2-21 PG-TO263-3 320N20N PG-TO220-3 320N20N IPP320N20N3 G | |
320n20n
Abstract: IPB320N20N3 IPP320N20N3 IEC61249-2-21 JESD22 PG-TO220-3 IPP320N20N3 G
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IPB320N20N3 IPP320N20N3 IPI320N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 320n20n IEC61249-2-21 JESD22 PG-TO220-3 IPP320N20N3 G | |
IPD320N20N3
Abstract: 320N20N IEC61249-2-21 JESD22 IPD320N20N3 G
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Original |
IPD320N20N3 IEC61249-2-21 PG-TO252-3 320N20N 24ologies 320N20N IEC61249-2-21 JESD22 IPD320N20N3 G | |
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Contextual Info: 320N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max 32 mΩ ID 36 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant |
Original |
BSC320N20NS3 IEC61249-2-21 320N20NS |